FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Item Symbol Drain-Source Voltage Condition VDS VGS Gate-Source Voltage PT Total Power Dissipation Unit Rating Tc = 25°C 12 -5 V 1.5 W V Storage Temperature TSTG -65 to 175 °C Channel Temperature TCH 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 3V, VGS = 0V Limit Typ. Max. Unit 70 110 150 mA Min. Transconductance gm VDS = 3V, IDS = 54mA - 100 - mS Pinch-off Voltage Vp VDS = 3V, IDS = 5.4mA -0.7 -1.2 -1.7 V IGS = -5.4µA -5.0 - - V - 2.5 - dB - 9.5 - dB 24.5 24.5 23.5 14.0 10.0 6.5 - dBm dBm dBm dB dB dB 70 100 °C/W Gate Source Breakdown Voltage Noise Figure Associated Gain VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth VDS = 3V, IDS = 30mA f = 8GHz f = 4GHz VDS = 8V, f = 8GHz 23.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 9.0 IDS = 0.7IDSS f = 12GHz Channel to Case CASE STYLE: WF Edition 1.2 July 1999 - G.C.P.: Gain Compression Point 1 FSX027WF General Purpose GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTA 140 1.5 Drain Current (mA) Total Power Dissipation (W) POWER DERATING CURVE 1.2 0.9 0.6 120 VGS = 0V 100 -0.2V 0.3 -0.4V 80 -0.6V 60 -0.8V 40 -1.0V 20 0 50 100 150 -1.2V 2 200 Case Temperature (°C) 4 8GHz 12GHz 25 20 60 f=4GHz 8GHz 16 ηadd 14 12GHz 50 40 30 12 20 10 10 8 P 1dB (dBm) Pout 18 10 P 1dB vs. VDS ηadd (%) Output Power (dBm) 24 22 f=4GHz IDS = 0.5 IDSS 8 Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 26 VDS = 8V 6 f = 8GHz IDS = 0.7 IDSS 23 21 19 17 0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power (dBm) 4 5 6 7 8 Drain-Source Voltage (V) FSX027WF General Purpose GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 15GHz 10 2 14 +j10 8 1GHz 4 14 12 6 26 8 4 8 10 8 6 4 2 SCALE FOR |S21| 15GHz 1GHz 10 12 12 .04 14 1GHz 100 50Ω 180° 250 15GHz 6 1GHz 10 2 -j10 4 8 6 -j250 .08 4 .12 1GHz -j25 .16 -j100 2 SCALE FOR |S12| 0 +j250 12 0° 14 15GHz -90° -j50 S11 S-PARAMETERS VDS =8V, IDS = 75mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG S22 1000 .942 -53.2 6.773 142.1 .021 62.8 .651 -25.8 2000 .852 -91.2 5.211 114.2 .030 47.6 .628 -43.7 3000 .782 -116.0 3.993 94.6 .033 43.1 .635 -56.5 4000 .745 -135.8 3.335 80.7 .035 41.5 .651 -66.8 5000 .710 -155.2 2.994 66.2 .037 44.2 .652 -73.6 6000 .683 -176.8 2.747 51.7 .040 41.3 .642 -83.7 7000 .656 -159.9 2.532 36.2 .048 38.2 .634 -97.6 8000 .638 139.7 2.323 20.2 .054 26.4 .638 -115.9 9000 .618 119.4 2.089 1.4 .057 17.1 .636 -134.5 10000 .601 97.2 1.838 -14.7 .065 3.9 .642 -150.7 MAG ANG 11000 .592 73.4 1.639 -30.5 .078 -5.1 .646 -168.5 12000 .591 51.8 1.646 -48.3 .087 -28.1 .647 172.6 13000 .600 33.6 1.401 -67.1 .093 -31.1 .651 155.2 14000 .582 19.1 1.409 -82.1 .117 -38.7 .668 139.4 15000 .499 -0.7 1.246 -103.6 .139 -53.2 .705 121.8 Download S-Parameters, click here 3 FSX027WF General Purpose GaAs FET 1.0 Min. (0.039) Case Style "WF" Metal-Ceramic Hermetic Package 0.1±0.05 (0.004) 2-ø1.6±0.01 (0.063) 1.0 Min. (0.039) 4 3 0.6 (0.024) 2 2.5 Max. (0.098) 2.5±0.15 (0.098) 1 2.5 (0.098) 1: Gate 6.1±0.1 (0.240) 8.5±0.2 (0.335) 0.8±0.1 (0.031) 2: Source (Flange) 3: Drain 4: Source (Flange) Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200