FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm(Typ.) High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 15 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with gate resistance of 200Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 1000 1500 mA Test Conditions Transconductance gm VDS = 5V, IDS =600mA - 500 - mS Pinch-off Voltage Vp VDS = 5V, IDS =50mA -1.0 -2.0 -3.5 V -5 - - V 32.5 34.0 - dBm 8.0 9.0 - dB - 36 - % - 8 10 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency ηadd Thermal Resistance Rth IGS = -50µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 6.4 GHz Channel to Case CASE STYLE: MH Edition 1.1 July 1999 G.C.P.: Gain Compression Point 1 FLC257MH-6 C-Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) Total Power Dissipation (W) POWER DERATING CURVE 1000 16 12 8 4 VGS =0V 750 -0.5V -1.0V 500 -1.5V 250 -2.0V 0 0 50 100 150 200 2 4 6 8 10 Drain-Source Voltage (V) Case Temperature (°C) VDS=10V 29 f1 = 6.4 GHz f = 6.41GHz 2 27 2-tone Test -10 25 -20 Pout 23 -30 IM3 21 19 -40 IM3 (dBc) Output Power (S.C.L.) (dBm) OUTPUT POWER & IM3 vs. INPUT POWER -50 12 14 16 18 20 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level P1dB & ηadd vs. VDS OUTPUT POWER vs. INPUT POWER f=6.4 GHz IDS ≈ 0.6 IDSS 29 27 25 23 ηadd 30 20 10 16 18 20 22 24 26 50 35 P1dB 34 30 33 8 Input Power (dBm) 9 10 Drain-Source Voltage (V) 2 40 ηadd ηadd (%) 50 40 P1dB (dBm) 31 Pout ηadd (%) Output Power (dBm) VDS = +10V 35 IDS ≈ 0.6 IDSS 33 f = 6.4 GHz FLC257MH-6 C-Band Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 5.5 6 5GHz 0 +j250 5.5 5GHz 8 8 7.5 7 6.5 6 6 6.5 5 6.5 25 250 180° 7.5 6 5.5 5GHz 4 3 2 7 1 8 7 -j10 -j250 -j100 -j50 .02 0° 7.5 SCALE FOR |S21| -j25 6.5 7 100 50Ω SCALE FOR |S12| +j10 8 7.5 .04 .06 .08 -90° FREQUENCY (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 600mA S21 S12 MAG ANG MAG ANG 500 .937 -142.8 7.241 109.5 .020 5000 .818 134.9 1.418 91.8 5500 .729 120.3 1.596 6000 .542 99.1 6500 .166 7000 S11 S22 MAG ANG 30.3 .351 -157.1 .029 86.1 .719 -163.9 85.8 .031 79.7 .751 -167.5 1.737 64.9 .038 69.2 .800 -170.6 67.8 1.912 50.3 .044 41.5 .839 -178.0 .338 -148.2 1.664 20.5 .042 5.6 .856 172.9 7500 .667 -177.6 1.231 -1.8 .034 -25.6 .832 165.7 8000 .814 161.6 .810 -16.0 .025 -44.4 .825 160.9 Download S-Parameters, click here 3 FLC257MH-6 C-Band Power GaAs FET 0.5 (0.020) 0.1 (0.004) 1 3.5±0.15 (0.138) 2-ø1.8±0.15 (0.071) 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic Package 2 1.0 Min. (0.039) 3 2.8 Max (0.110) 6.7±0.2 (0.264) 0.1 (0.004) 1.0 (0.039) 3.5±0.3 (0.138) 1.65±0.15 (0.065) 10.0±0.3 (0.394) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4