EUDYNA FLL400IK-2C

FLL400IK-2C
High Voltage - High Power GaAs FET
FEATURES
・High Output Power: P1dB=46.0dBm(Typ.)
・High Gain: G1dB=13.0dB(Typ.)
・High PAE: ηadd=45%(Typ.)
・Broad Band: 2.11~2.17GHz
・Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
for use in W-CDMA base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PTot
T stg
T ch
Unit
15
-5
100
-65 to +175
175
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
VDS
IGF
IGR
Operating channel temperature
Tch
RG=5Ω
RG=5Ω
12
<85
>-25
V
mA
mA
145
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Limit
Item
Symbol
Condition
Min. Typ. Max.
Pinch-off Voltage
Gate-Source Breakdown Voltage
Vp
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Thermal Resistance
G1dB
Idsr
η add
VDS=5V,IDS=110mA
IGS=-1.1mA
V DD=12V
f=2.17GHz
IDS(DC)=1.5A
Pin=35dBm
Rth
Unit
Unit
-0.1
-5.0
-0.3
-
-0.5
-
V
V
45.0
46.0
-
dBm
12.0
-
13.0
6.7
8.7
dB
A
-
45.0
1.3
1.5
CASE STYLE: IK
ESD
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
September 2004
1
%
C/W
o
FLL400IK-2C
High Voltage - High Power GaAs FET
■ Package Out Line
PIN ASSIGMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit:mm
2
FLL400IK-2C
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・
Do not put these products into the mouth.
・
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts
are dangerous to the human body if inhaled, ingested, or swallowed.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
・
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
3