FLL400IK-2 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=12.0dB(Typ.) ・High PAE: ηadd=46%(Typ.) ・Broad Band: 1.8~2.0GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited for use in PHS base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. o ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 C) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot Tstg T ch Unit 15 -5 93.7 -65 to +175 175 V V W o C o C o RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current VDS IGF IGR Operating channel temperature Tch 12 <54.4 >-17.4 RG=10Ω RG=10Ω Unit V mA mA o C 145 o ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Limit Item Symbol Condition Min. Typ. Max. Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage gm Vp VGSO Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Thermal Resistance P1dB G1dB Idsr η add Rth ESD Class III VDS=5V,IDS=8.0A VDS=5V,IDS=1.08A IGS=-1.08mA VDD=12V f=1.9GHz IDS(DC)=4A 2000 V~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 Augest 2004 1 Unit -1.0 -5.0 9.0 -2.0 - -3.5 - S V V 45.5 11.5 - 46.5 12.0 7.5 46.0 1.3 8.5 1.6 dBm dB A % o C/W CASE STYLE: IK FLL400IK-2 High Voltage - High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm 2 FLL400IK-2 High Voltage - High Power GaAs FET For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・ Do not put these products into the mouth. ・ Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・ Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 3