FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm (typ.) High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications as a driver or output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Rating Unit DC Input Voltage VDD 12 V DC Input Voltage VGG -7 V Input Power Pin 17 dBm Storage Temperature Tstg -55 to +125 °C Operating Case Temperature Top -40 to +85 °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Symbol Test Conditions Min. Limit Typ. Max. Unit f 14.0 ~ 14.5 GHz P1dB 28.0 29.0 - dBm 18.0 20.0 - dB - 1.0 1.5 dB G ∆G VDD = 10V VGG = -5V f = 14.0 to 14.5 GHz Input VSWR VSWRi - 2:1 2.3:1 - Output VSWR VSWRo - 2.3:1 3:1 - Power Monitor Vmon - 2.5 - V - 700 1000 mA - 15 20 mA DC Input Current IDD DC Input Current IGG Pout = 28.0dBm VDD = 10V VGG = -5V CASE STYLE: VF Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY Pin=12dBm Output Power (dBm) Output Power (dBm) 30 VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER 10dBm 8dBm 28 6dBm 26 4dBm 24 VDD=10V 30 VGG=-5V f=14.25GHZ 28 26 24 22 2dBm 22 2 4 6 8 10 Input Power (dBm) 14.0 14.1 14.2 14.3 14.4 14.5 Frequency (GHz) Recommended Bias Circuit 1000pF 1000pF 50Ω 50Ω VGG VDD 3 4 2 5 1 6 50Ω Pmon VDD 50Ω 1000pF 1000pF 2 12 FMM5017VF GaAs MMIC S11 S22 +j100 +j25 0.06 0.04 +j250 +j10 0.02 14.7GHz 0 10 25 100 13.8GHz 180° 15 5 14.7GHz 10 SCALE FOR |S21| 14.7GHz 13.8GHz 13.8GHz 14.7GHz 13.8GHz -j10 S21 S12 +90° SCALE FOR |S12| +j50 -j25 -j250 -j100 -90° -j50 S-PARAMETERS VDD = 10V, VGG = -5V FREQUENCY (MHZ) 13800 13900 14000 14100 14200 14300 14400 14500 14600 14700 S11 S21 S12 S22 MAG ANG MAG ANG MAG ANG MAG ANG .074 .100 .109 .119 .125 .138 .147 .156 .174 .196 -61.1 -62.8 -69.8 -76.2 -86.0 -93.2 -102.6 -112.8 -124.2 -136.3 11.417 11.014 11.331 10.909 11.088 10.730 10.728 10.562 10.353 9.941 -6.7 -27.2 -38.0 -55.3 -69.1 -83.9 -98.6 -113.4 -128.9 -146.6 .007 .001 .004 .007 .009 .005 .007 .007 .005 .007 -77.6 -66.1 -134.6 -114.5 -133.9 -110.5 -88.3 -100.2 172.4 -158.7 .341 .289 .250 .203 .170 .126 .081 .027 .057 .128 -86.2 -87.2 -89.6 -89.4 -93.2 -94.5 -104.1 -137.0 96.0 69.3 Download S-Parameters, click here Pin Configuration 1 2 3 6 5 4 3 0° FMM5017VF GaAs MMIC Case Style "VF" 17.78 (0.70) 13.46 (0.530) 8.38 (0.330) 4-C 1.52 (0.060) 6.4 (0.253) PIN ASSIGNMENT 6 4-0.5 (0.020) 5 2-0.3 (0.012) 4 1.0 MIN (0.039) 2-R 1.22 (0.048) 6.63 (0.260) 3 8.33 (0.328) 2 2.44 (0.096) 6.63 (0.261) 1 1.0 MIN (0.039) INDEX (4-R 0.5) (0.020) Symbol 1. 2. 3. 4. 5. 6. VDD RF in VGG Pmon RF out VDD Unit: mm(inches) 0.51 (0.020) 7.88 (0.310) 0.125 (0.005) 1.02 (0.040) 3.0 MAX (0.118) Pin For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4