FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V (or+5V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available DESCRIPTION The FMM1061VJ is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 4 over a frequency range from 2.0 to 6.0 GHz. This part is designed for Microwave Frequency Synthesizer and Phase-Locked Oscillator applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Symbol Ratings Unit Supply Voltage Vss -7.0 to 0 V Input Voltage Vin Vss to 0 V Input Power Pin +13.0 dBm Storage Temperature Tstg -55 to +125 °C Power Dissipation PD 1.0 W Parameter RECOMMENDED OPERATING CONDITIONS Parameter Min. Limit Typ. Max. Unit Vss -5.5 -5.0 -4.5 V Ta -30 - +70 °C Symbol Supply Voltage Ambient Temperature ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = 25°C, Vss = -5.0V) Parameter Condition Symbol Power Supply Current Iss Operating Frequency fin Output Power Po Pin = 0~10dBm CASE STYLE: VJ Edition 1.1 August 1999 1 Limit Typ. Max. Unit - 100 - mA 2.0 - 6.0 GHz 0 4 - dBm Min. FMM1061VJ GaAs MMIC Test Circuit Positive Supply Voltage VDD = +5V Operation Circuit VDD = +5.0V 0.33µF 2 1000pF 1 GND VDD 10 IN OUT 4 9 1000pF 8 1000pF INPUT GND 1000pF 50Ω 3 OUTPUT GND 5 OUTPUT IN OUT VSS GND 50Ω 6 50Ω 7 Negative Supply Voltage Vss = -5V Operation Circuit 2 1000pF 3 GND VDD 10 IN OUT 4 9 INPUT GND 1000pF 1 GND 5 8 IN OUT VSS GND 50Ω 6 0.33µF 7 VSS = -5.0V 2 1000pF OUTPUT 50Ω 1000pF OUTPUT 50Ω FMM1061VJ GaAs MMIC INPUT SENSITIVITY CHARACTERISTICS Vss = -5.0V, Ta = 25°C RECOMMENDED OPERATING REGION (2GHz~6GHz) 5 8 0 7 -5 6 -10 5 -15 4 Pin -20 3 -25 2 -30 1 1 2 3 4 5 Input Frequency (GHz) 3 6 7 Output Power (dBm) Input Power (dBm) Pout FMM1061VJ GaAs MMIC Case Style “VJ” 4.8±0.2 (0.189) 3 6 2 7 1 8 9 10 1.9 (0.075) 2.9 (0.114) 4 2.8 (0.110) 6-1.27 (0.050) 3.9±0.2 (0.154) 6.3±0.2 (0.248) 5 3.8 (0.150) 1.2±0.2 (0.047) 10-0.38 (0.015) 1.2±0.2 (0.047) 7.2±0.2 (0.283) INDEX 0.15 (0.006) LEAD ASSIGNMENT Lead Symbol Lead Symbol 1. 2. 3. 4. 5. VDD GND IN GND IN 6. 7. 8. 9. 10. Vss GND OUT GND OUT Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4