EUDYNA FMM1061VJ

FMM1061VJ
GaAs MMIC
FEATURES
• Operation to 6.0 GHz
• Input Frequency divide by 4, OUT and OUT
• -5V (or+5V) DC Single Power Supply
• External 50 ohm Load Driving Capability
• Small 10 pin Hermetic SMT-10 Package (VJ)
• Tape and Reel available
DESCRIPTION
The FMM1061VJ is a GaAs Microwave Static Frequency Divider
designed for dividing an input signal by 4 over a frequency range
from 2.0 to 6.0 GHz. This part is designed for Microwave Frequency
Synthesizer and Phase-Locked Oscillator applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Symbol
Ratings
Unit
Supply Voltage
Vss
-7.0 to 0
V
Input Voltage
Vin
Vss to 0
V
Input Power
Pin
+13.0
dBm
Storage Temperature
Tstg
-55 to +125
°C
Power Dissipation
PD
1.0
W
Parameter
RECOMMENDED OPERATING CONDITIONS
Parameter
Min.
Limit
Typ.
Max.
Unit
Vss
-5.5
-5.0
-4.5
V
Ta
-30
-
+70
°C
Symbol
Supply Voltage
Ambient Temperature
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta = 25°C, Vss = -5.0V)
Parameter
Condition
Symbol
Power Supply Current
Iss
Operating Frequency
fin
Output Power
Po
Pin = 0~10dBm
CASE STYLE: VJ
Edition 1.1
August 1999
1
Limit
Typ. Max.
Unit
-
100
-
mA
2.0
-
6.0
GHz
0
4
-
dBm
Min.
FMM1061VJ
GaAs MMIC
Test Circuit
Positive Supply Voltage
VDD = +5V Operation Circuit
VDD = +5.0V
0.33µF
2
1000pF
1
GND VDD 10
IN
OUT
4
9
1000pF
8
1000pF
INPUT
GND
1000pF
50Ω
3
OUTPUT
GND
5
OUTPUT
IN
OUT
VSS GND
50Ω
6
50Ω
7
Negative Supply Voltage
Vss = -5V Operation Circuit
2
1000pF
3
GND VDD 10
IN
OUT
4
9
INPUT
GND
1000pF
1
GND
5
8
IN
OUT
VSS GND
50Ω
6
0.33µF
7
VSS = -5.0V
2
1000pF
OUTPUT
50Ω
1000pF
OUTPUT
50Ω
FMM1061VJ
GaAs MMIC
INPUT SENSITIVITY CHARACTERISTICS
Vss = -5.0V,
Ta = 25°C
RECOMMENDED
OPERATING REGION
(2GHz~6GHz)
5
8
0
7
-5
6
-10
5
-15
4
Pin
-20
3
-25
2
-30
1
1
2
3
4
5
Input Frequency (GHz)
3
6
7
Output Power (dBm)
Input Power (dBm)
Pout
FMM1061VJ
GaAs MMIC
Case Style “VJ”
4.8±0.2
(0.189)
3
6
2
7
1
8
9
10
1.9
(0.075)
2.9
(0.114)
4
2.8
(0.110)
6-1.27
(0.050)
3.9±0.2
(0.154)
6.3±0.2
(0.248)
5
3.8
(0.150)
1.2±0.2
(0.047)
10-0.38
(0.015)
1.2±0.2
(0.047)
7.2±0.2
(0.283)
INDEX
0.15
(0.006)
LEAD ASSIGNMENT
Lead
Symbol
Lead
Symbol
1.
2.
3.
4.
5.
VDD
GND
IN
GND
IN
6.
7.
8.
9.
10.
Vss
GND
OUT
GND
OUT
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4