ZETEX BCW71

SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
BCW71
BCW72
BCW71
BCW72
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
DIM
E
C
B
Millimeters
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
0.021
F
0.085
0.15
0.0033
0.0059
G
K
L
N
NOM 1.9
0.01
2.10
0.10
2.50
NOM 0.95
NOM 0.075
0.0004
0.0825
BCW71
BCW72
BCW71R
BCW72R
– K1
– K2
– K4
– K5
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
0.004
Collector-Emitter Voltage
VCEO
45
V
0.0985
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
200
mA
Continuous Collector Current
IC
100
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
NOM 0.37
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base Cut-Off
Current
ICBO
Base-Emitter Voltage
VBE
TYP.
550
Collector-Emitter Saturation VCE(sat)
Voltage
120
210
Base-Emitter Saturation
Voltage
VBE(sat)
750
850
Static Forward
BCW71
Current Transfer
Ratio
BCW72
hFE
110
200
Transition Frequency
fT
Collector Capacitance
CTC
Noise Figure
N
90
150
MAX. UNIT
CONDITIONS.
100
10
µA
nA
IE=0, VCB=20V
IE=0,
VCB=20V,Tj=100°C
700
mV
IC=2.0mA, VCE=5V
250
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
220
IC =10µ A, VCE =5V
IC =2mA, VCE =5V
450
IC =10µ A, VCE =5V
IC =2mA, VCE =5V
300
MHz
IC =10mA, VCE =5V
f =35MHz
4
pF
IE =Ie =0, VCB =10V
f =1MHz
10
dB
IC =200µ A, VCE =5V
RS =2KΩ , f =1KHz
B =200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices
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SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
BCW71
BCW72
BCW71
BCW72
ISSUE 2 – FEBRUARY 1995
PARTMARKING DETAILS –
DIM
E
C
B
Millimeters
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
–
1.10
–
0.043
D
0.37
0.53
0.0145
0.021
F
0.085
0.15
0.0033
0.0059
G
K
L
N
NOM 1.9
0.01
2.10
0.10
2.50
NOM 0.95
NOM 0.075
0.0004
0.0825
BCW71
BCW72
BCW71R
BCW72R
– K1
– K2
– K4
– K5
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50
V
0.004
Collector-Emitter Voltage
VCEO
45
V
0.0985
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
200
mA
Continuous Collector Current
IC
100
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
NOM 0.37
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
Collector-Base Cut-Off
Current
ICBO
Base-Emitter Voltage
VBE
TYP.
550
Collector-Emitter Saturation VCE(sat)
Voltage
120
210
Base-Emitter Saturation
Voltage
VBE(sat)
750
850
Static Forward
BCW71
Current Transfer
Ratio
BCW72
hFE
110
200
Transition Frequency
fT
Collector Capacitance
CTC
Noise Figure
N
90
150
MAX. UNIT
CONDITIONS.
100
10
µA
nA
IE=0, VCB=20V
IE=0,
VCB=20V,Tj=100°C
700
mV
IC=2.0mA, VCE=5V
250
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
mV
mV
IC=10mA, IB=0.5mA
IC=50mA, IB=2.5mA
220
IC =10µ A, VCE =5V
IC =2mA, VCE =5V
450
IC =10µ A, VCE =5V
IC =2mA, VCE =5V
300
MHz
IC =10mA, VCE =5V
f =35MHz
4
pF
IE =Ie =0, VCB =10V
f =1MHz
10
dB
IC =200µ A, VCE =5V
RS =2KΩ , f =1KHz
B =200Hz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for these devices
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