FMMTA12 FMMTA13 FMMTA14 SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - PARTMARKING DETAILS FMMTA12 NONE FMMTA13 FMMTA63 FMMTA14 FMMTA64 E C B FMMTA12 3W FMMTA13 1M FMMTA14 1N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage FMMTA12 FMMTA13/14 UNIT VCBO 40 V VCEO 40 V 20 40 V Collector-Emitter Voltage VCES Emitter-Base Voltage VEBO 10 V Continuous Collector Current IC 300 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector-Emitter FMMTA12 V(BR)CES Breakdown Voltage FMMTA13/14 MIN. MAX. 20 40 UNIT CONDITIONS. V V IC=100µA, IB=0* IC=100µA, IB=0* Collector Cut-Off Current FMMTA12 ICES 100 nA VCB=15V, VBE=0 Collector Cut-Off Current FMMTA12 ICBO FMMTA13/14 100 100 nA nA VCB=15V, IE=0 VCB=30V, IE=0 100 nA VEB=10V, IC=0 Emitter Cut-Off Current IEBO Static Forward Current Transfer Ratio hFE FMMTA12 FMMTA13 FMMTA13 FMMTA14 FMMTA14 IC=10mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* 20K 5K 10K 10K 20K Collector-Emitter FMMTA12 VCE(sat) Saturation Voltage FMMTA13/14 1.0 0.9 V V IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA Base-Emitter On Voltage 1.4 2.0 V V IC=10mA, VCE=5V* IC=100mA,VCE=5V* FMMTA12 VBE(on) FMMTA13/14 *Measured under pulsed conditions. Pulse width =300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices For typical graphs see FMMT38A datasheet