BCV26 BCV46 SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS E C BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCV26 BCV46 UNIT Collector-Base Voltage VCBO -40 -80 V Collector-Emitter Voltage VCEO -30 -60 V Emitter-Base Voltage VEBO -10 V Peak Pulse Current ICM -800 mA Continuous Collector Current IC -500 mA Base Current IB -100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V(BR)CBO BCV26 MIN. MAX. -40 BCV46 MIN. MAX. -80 V(BR)CEO -30 V(BR)EBO -10 ICBO -100 -10 UNIT CONDITIONS. V IC=100µA -60 V IC=10mA * -10 V IE=10µA -10 nA nA µA µA VCB = -30V VCB = -60V VCB=-30V,Tamb =150oC VCB=-60V,Tamb =150oC VEB=-4V -100 IEBO -100 -100 nA VCE(sat) -1.0 -1.0 V IC=-100mA,IB=-0.1mA* VBE(sat) -1.5 -1.5 V IC=-100mA,IB=-0.1mA* Static Forward Current hFE Transfer Ratio Transition Frequency fT Output Capacitance Cobo 4K 10K 20K 4K 200 Typical 2K 4K 10K 2K 200 Typical 4.5 Typical 4.5 Typical MHz pF IC=-100µΑ, VCE=-1V IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-50mA, VCE=-5V f = 20MHz VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for these devices Periodic Sample Test Only. 3 - 21