BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA 5 V IEBO =10µA 20 20 nA µA VCES = 32V VCES = 32V ,Tamb=150oC 20 20 µA nA VCES = 45V VCES = 45V ,Tamb=150oC 20 nA VEBO =4V Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES BCW65 BCW66 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Static Forward Current Transfer BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS VBE(SAT) BCW65A hFE BCW66F 35 75 100 35 BCW65B hFE BCW66G 50 110 160 60 BCW65C hFE BCW66H 80 180 250 100 Transition Frequency fT Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff 160 250 350 0.3 V 0.7 V IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 IC=500mA, IB=50mA* V ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 32 45 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 800 mA 250 VCE =10V VCE = 1V VCE = 1V* VCE = 2V* Peak Collector Current(10ms) ICM 1000 mA Base Current IB 100 mA VCE =10V VCE = 1V VCE = 1V* VCE = 2V* Power Dissipation at Tamb=25°C Ptot 330 mW 400 IC=100µA, IC= 10mA, IC=100mA, IC=500mA, Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 630 IC=100µA, IC= 10mA, IC=100mA, IC=500mA, VCE =10V VCE = 1V VCE = 1V* VCE = 2V* MHz IC =20mA, VCE =10V f = 100MHz 2 12 pF VCBO=10V, f =1MHz 80 pF VEBO=0.5V, f =1MHz 10 dB IC= 0.2mA, VCE = 5V RG =1kΩ 100 400 ns ns IC=150mA IB1=- IB2 =15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 28 B IC=100µA, IC= 10mA, IC=100mA, IC=500mA, 100 8 E C 3 - 27 BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10µA IC=10µA 5 V IEBO =10µA 20 20 nA µA VCES = 32V VCES = 32V ,Tamb=150oC 20 20 µA nA VCES = 45V VCES = 45V ,Tamb=150oC 20 nA VEBO =4V Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES BCW65 BCW66 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Static Forward Current Transfer BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS VBE(SAT) BCW65A hFE BCW66F 35 75 100 35 BCW65B hFE BCW66G 50 110 160 60 BCW65C hFE BCW66H 80 180 250 100 Transition Frequency fT Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff 160 250 350 0.3 V 0.7 V IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 IC=500mA, IB=50mA* V ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 32 45 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 800 mA 250 VCE =10V VCE = 1V VCE = 1V* VCE = 2V* Peak Collector Current(10ms) ICM 1000 mA Base Current IB 100 mA VCE =10V VCE = 1V VCE = 1V* VCE = 2V* Power Dissipation at Tamb=25°C Ptot 330 mW 400 IC=100µA, IC= 10mA, IC=100mA, IC=500mA, Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 630 IC=100µA, IC= 10mA, IC=100mA, IC=500mA, VCE =10V VCE = 1V VCE = 1V* VCE = 2V* MHz IC =20mA, VCE =10V f = 100MHz 2 12 pF VCBO=10V, f =1MHz 80 pF VEBO=0.5V, f =1MHz 10 dB IC= 0.2mA, VCE = 5V RG =1kΩ 100 400 ns ns IC=150mA IB1=- IB2 =15mA RL=150Ω Spice parameter data is available upon request for this device *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 28 B IC=100µA, IC= 10mA, IC=100mA, IC=500mA, 100 8 E C 3 - 27