2MBI200U2A-060 IGBT Module U-Series 600V / 200A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Features Applications · High speed switching · Voltage drive · Low inductance module structure · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 Conditions Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Continuous 1ms 1 device AC:1min. Rating 600 ±20 200 400 200 400 660 +150 -40 to +125 2500 3.5 3.5 Unit V V A W °C VAC N·m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Symbols Conditions ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =300V IC=200A VGE=±15V RG= 16 Ω VGE=0V IF=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C IF=200A Characteristics Min. Typ. – – – – 6.2 6.7 – 2.15 – 2.40 – 1.85 – 2.10 – 14 – 0.40 – 0.22 – 0.16 – 0.48 – 0.07 – 1.90 – 1.95 – 1.60 – 1.65 – – – 1.39 Max. 1.0 200 7.7 2.45 – – – – 1.20 0.60 – 1.20 0.45 2.30 – – – 0.35 – Unit Characteristics Min. Typ. – – – – – 0.05 Max. 0.19 0.32 – mA nA V V nF µs V µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. Unit °C/W °C/W °C/W IGBT Module 2MBI200U2A-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 500 500 VGE=20V 15V 12V VGE=20V 15V 12V 400 Collector current : Ic [A] Collector current : Ic [A] 400 10V 300 200 10V 300 200 8V 100 100 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 3 4 5 Collector - Emitter voltage : VCE [ V ] 10 Tj=25°C Tj=125°C 400 Collector current : Ic [A] 2 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 500 300 200 100 0 8 6 4 Ic=400A Ic=200A Ic=100A 2 0 0 1 2 3 4 5 5 Capacitance vs. Collector-Emitter voltage (typ.) 15 20 25 Dynamic Gate charge (typ.) Vcc=300V, Ic=200A, Tj= 25°C Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Cies 10.0 Cres Coes 1.0 10 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 1 Collector-Emitter voltage : VCE [V] VGE VCE 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 200 400 Gate charge : Qg [ nC ] 600 800 IGBT Module 2MBI200U2A-060 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω, Tj= 25°C Vcc=300V, VGE=±15V, Rg=16Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff 1000 ton tr tf 100 ton 1000 toff tr 100 tf 10 10 0 100 200 300 0 400 100 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 25°C 400 Vcc=300V, VGE=±15V, Rg=16Ω 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 300 Switching loss vs. Collector current (typ.) 10000 1000 toff ton tr tf 100 Eoff(125°C) Eon(125°C) 15 Eoff(25°C) Eon(25°C) 10 5 Err(125°C) 10 Err(25°C) 0 1.0 10.0 100.0 0 100 Gate resistance : Rg [ Ω ] 200 300 400 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 16Ω ,Tj <= 125°C 500 30 Eon 25 20 15 Eoff 10 400 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 Collector current : Ic [ A ] 300 200 100 5 Err 0 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 0 0 200 400 600 Collector - Emitter voltage : VCE [ V ] 800 IGBT Module 2MBI200U2A-060 a Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) chip Vcc=300V, VGE=±15V, Rg=16Ω 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 500 400 Tj=25 °C 300 Tj=125°C 200 100 0 1 2 3 Transient thermal resistance (max.) 1.000 FWD IGBT 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width : Pw [ sec ] Outline Drawings, mm 0 100 200 300 Forward current : IF [ A ] Forward on voltage : VF [ V ] Thermal resistanse : Rth(j-c) [ °C/W ] 100 10 0 M232 Irr (125°C) Irr (25°C) trr (125°C) trr (25°C) 1.000 400