Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • Output Power: 15dBm Typical • Input and Output Return Loss: < -10 dB Chip Size: 1410 x 1010 µm (55.5 x 39.7 mils) Chip Size Tolerance:± 10µm (± 0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 80 x 80 µm (3.1 x 3.1 mils or larger) • Positive Gain Slope: + 0.21dB/GHz Typical • Single Supply Bias: 5 V @ 95 mA Typical Applications • General purpose, wide-band amplifier in communication systems or microwave instrumentation Description Agilent’s AMMC- 5620 MMIC is a GaAs wide- band amplifier designed for medium output power and high gain over the 6 − 20 GHz frequency range. The 3 cascaded stages provide high gain while the single bias supply offers ease of use. It is fabricated using a PHEMT integrated circuit process. The RF input and output ports have matching circuitry for use in 50- Ω environments. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex tuning and assembly processes. • High gain amplifier AMMC-5620 Absolute Maximum Ratings [1] Symbol Parameters/Conditions Units Min. Max. VDD Drain Supply Voltage V 7.5 IDD Total Drain Current mA 135 PDC DC Power Dissipation W 1.0 Pin RF CW Input Power dBm 20 Tch Channel Temp. °C +150 Tb Operating Backside Temp. °C -55 Tstg Storage Temp. °C -65 Tmax Maximum Assembly Temp. (60 sec max) °C +165 +300 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Note: These devices are ESD sensitive. The following precautions are strongly recommended: Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. AMMC-5620 DC Specifications / Physical Properties [1] Symbol Parameters and Test Conditions Units Min. Typical VDD Recommended Drain Supply Voltage V IDD Total Drain Supply Current (V DD= 5V) mA IDD Total Drain Supply Current (VDD= 7 V) mA 105 θ ch-b Thermal Resistance [3] (Backside temperature (Tb) = 25°C °C/W 33 Max. 5 70 95 130 Notes: 1. Backside temperature Tb = 25°C unless otherwise noted 2. Channel-to-backside Thermal Resistance (θch-b) = 47°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. AMMC-5620 RF Specifications [3] (Tb = 25°C, VDD = 5 V, IDD = 95mA, Zo=50Ω) Symbol Parameters and Test Conditions Units Min. Typical Max. |S21|2 Small-signal Gain dB 16 19 22 Gain Slope Positive Small-signal Gain Slope dB/GHz RLin Input Return Loss dB 10 13 RLout Output Return Loss dB 10 14 |S12|2 Reverse Isolation dB P-1dB Output Power at 1dB Gain Compression @ 20 GHz dBm 12.5 15 Psat Saturated Output Power (3dB Gain Compression) @ 20 GHz dBm 14.5 17 OIP3 Output 3rd Order Intercept Point @ 20 GHz dBm 23.5 NF Noise Figure @ 20 GHz dB 4.2 Note: 3.. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted. 2 +0.21 - 55 5.0 AMMC-5620 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 95 mA, Zo=50Ω) 0 25 0 -10 15 10 -10 -20 INPUT RL (dB) ISOLATION (dB) GAIN (dB) 20 -30 -40 -50 -20 -30 5 -60 0 4 7 10 13 16 19 -70 22 4 7 FREQUENCY (GHz) 10 13 16 19 -40 22 4 7 FREQUENCY (GHz) Figure 1. Gain Figure 2. Isolation 0 10 13 16 19 22 19 22 FREQUENCY (GHz) Figure 3. Input Return Loss 10 18 15 8 -20 P1dB (dBm) NF (dB) OUTPUT RL (dB) -10 6 4 12 9 6 -30 2 -40 4 7 10 13 16 19 0 22 3 4 7 FREQUENCY (GHz) 10 13 16 19 0 22 4 7 FREQUENCY (GHz) Figure 4. Output Return Loss 10 13 16 FREQUENCY (GHz) Figure 5. Noise Figure Figure 6.Output Power at 1 dB Gain Compression AMMC-5620 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50Ω) 25 0 0 Vdd=4V Vdd=5V Vdd=6V 20 15 10 Vdd=4V Vdd=5V Vdd=6V -10 INPUT RL (dB) ISOLATION (dB) GAIN (dB) -20 -40 -20 -30 Vdd=4V Vdd=5V Vdd=6V -60 5 -40 0 -50 -80 4 7 10 13 16 FREQUENCY (GHz) Figure 7. Gain and Voltage 19 22 4 7 10 13 16 FREQUENCY (GHz) Figure 8. Isolation and Voltage 19 22 4 7 10 13 16 19 22 FREQUENCY (GHz) Figure 9. Input Return Loss and Voltage 3 AMMC-5620 Typical Performance vs. Supply Voltage (cont.) (Tb=25°C, Zo=50Ω) 0 20 16 P1dB (dBm) OUTPUT RL (dB) -10 -20 Vdd=4V Vdd=5V Vdd=6V -30 12 8 Vdd=4V Vdd=5V Vdd=6V 4 0 -40 4 7 10 13 16 19 22 4 7 FREQUENCY (GHz) 10 13 16 19 22 FREQUENCY (GHz) Figure 10. Output Return Loss and Voltage Figure 11. Output Power and Voltage AMMC-5620 Typical Performance vs. Temperature (VDD=5V, Zo=50Ω) 0 20 -10 GAIN (dB) 16 12 -40 C 25 C 85 C 8 0 -40 C 25 C 85 C -20 -30 -40 -50 4 4 -30 7 10 13 16 19 -70 22 -40 C 25 C 85 C -40 4 7 FREQUENCY (GHz) 10 13 16 19 22 4 7 FREQUENCY (GHz) Figure 12. Gain and Temperature 13 7 18 -5 6 15 -10 5 -15 4 P1dB (dB) 3 -40 C 25 C 85 C -35 4 7 10 13 16 FREQUENCY (GHz) Figure 15.Output Return Loss and Temperature 19 -40 C 25 C 85 C 1 22 0 22 9 -40 C 25 C 85 C 2 -30 19 12 6 -25 16 Figure 14. Input Return Loss and Temperature 0 -20 10 FREQUENCY (GHz) Figure 13. Isolation and Temperature NF (dB) OUTPUT RL (dB) -20 -60 0 4 -10 INPUT RL (dB) ISOLATION (dB) 24 3 0 4 7 10 13 16 19 FREQUENCY (GHz) Figure 16. Noise Figure and Temperature 22 4 7 10 13 16 19 FREQUENCY (GHz) Figure 17. Output Power and Temperature 22 AMMC-5620 Typical Scattering Parameters[1] (Tb=25°C, VDD= 5 V, IDD = 107 mA) Freq GHz S11 S21 S12 S22 dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase 2.00 -2.9 0.72 -147 -23.3 0.07 -176 -50.0 0 46 -1.5 0.85 -72 2.50 -3.3 0.69 -168 -16.1 0.16 146 -46.1 0 -1 -2.5 0.75 -89 3.00 -3.5 0.67 173 -10.0 0.31 114 -44.0 0.01 -46 -3.6 0.66 -104 3.50 -3.7 0.65 154 -4.6 0.59 87 -42.9 0.01 -89 -4.5 0.6 -118 4.00 -3.8 0.64 134 0.8 1.1 62 -42.1 0.01 -132 -5.3 0.54 -136 4.50 -4.0 0.63 111 6.6 2.15 34 -41.5 0.01 -179 -6.7 0.46 -158 5.00 -5.0 0.56 81 12.0 3.96 -5 -42.1 0.01 128 -9.6 0.33 175 5.50 -7.7 0.41 49 15.2 5.73 -50 -44.7 0.01 72 -15.2 0.17 157 6.00 -12.0 0.25 23 16.7 6.84 -91 -49.0 0 19 -21.8 0.08 165 6.50 -16.9 0.14 5 17.0 7.06 -123 -53.7 0 -30 -24.8 0.06 -173 7.00 -21.9 0.08 -8 17.2 7.28 -150 -58.0 0 -78 -26.4 0.05 -164 7.50 -27.2 0.04 -18 17.4 7.41 -173 -60.6 0 -123 -30.0 0.03 -155 8.00 -32.8 0.02 -17 17.9 7.81 164 -61.9 0 -160 -34.5 0.02 -102 8.50 -33.4 0.02 -5 18.2 8.12 142 -64.4 0 -178 -28.3 0.04 -61 9.00 -30.9 0.03 -15 18.4 8.29 121 -64.4 0 -179 -23.8 0.06 -60 9.50 -27.7 0.04 -32 18.4 8.34 101 -63.1 0 169 -21.2 0.09 -65 10.00 -24.9 0.06 -50 18.4 8.35 83 -63.5 0 157 -19.3 0.11 -72 10.50 -22.6 0.07 -66 18.5 8.37 65 -64.4 0 144 -18.1 0.12 -78 11.00 -20.7 0.09 -80 18.5 8.36 48 -64.4 0 145 -17.1 0.14 -84 11.50 -19.3 0.11 -92 18.5 8.37 32 -64.2 0 130 -16.3 0.15 -90 12.00 -18.2 0.12 -103 18.5 8.38 16 -62.1 0 127 -15.7 0.16 -95 12.50 -17.3 0.14 -113 18.5 8.4 1 -63.3 0 126 -15.1 0.18 -101 13.00 -16.6 0.15 -123 18.5 8.43 -14 -64.4 0 125 -14.7 0.18 -105 13.50 -16.0 0.16 -131 18.6 8.48 -29 -62.1 0 118 -14.4 0.19 -110 14.00 -15.6 0.17 -140 18.6 8.53 -44 -61.9 0 107 -14.2 0.2 -115 14.50 -15.3 0.17 -148 18.7 8.6 -58 -62.1 0 107 -14.0 0.2 -120 15.00 -15.1 0.18 -156 18.8 8.71 -73 -62.9 0 98 -13.7 0.21 -126 15.50 -15.0 0.18 -164 18.9 8.81 -87 -64.1 0 82 -13.6 0.21 -131 16.00 -14.9 0.18 -172 19.1 8.97 -101 -61.2 0 94 -13.4 0.21 -136 16.50 -14.9 0.18 179 19.2 9.11 -116 -60.0 0 95 -13.3 0.22 -140 17.00 -15.0 0.18 170 19.3 9.25 -131 -61.8 0 60 -13.3 0.22 -145 17.50 -15.0 0.18 160 19.5 9.43 -145 -62.1 0 80 -13.2 0.22 -150 18.00 -14.9 0.18 149 19.7 9.62 -161 -61.9 0 70 -13.2 0.22 -154 18.50 -14.7 0.18 137 19.9 9.84 -176 -62.7 0 67 -13.3 0.22 -159 19.00 -14.3 0.19 122 20.0 10 168 -61.9 0 70 -13.4 0.21 -166 19.50 -13.8 0.2 106 20.1 10.2 151 -61.9 0 61 -13.6 0.21 -171 20.00 -13.1 0.22 89 20.2 10.3 134 -60.0 0 45 -14.0 0.2 -177 20.50 -11.9 0.25 72 20.3 10.4 117 -60.9 0 41 -14.1 0.2 179 21.00 -10.5 0.3 53 20.3 10.3 99 -64.1 0 38 -14.6 0.19 173 21.50 -9.0 0.35 36 20.2 10.2 80 -67.5 0 13 -15.1 0.18 168 22.00 -7.5 0.42 19 19.9 9.88 60 -67.5 0 5 -15.5 0.17 162 Note: 1. Data obtained from on-wafer measurements 5 Biasing and Operation Assembly Techniques The AMMC- 5620 is normally biased with a single positive drain supply connected to the VDD bond pads shown in Figure 19. The recommended supply voltage is 5 V, which results in IDD = 95 mA (typical). The backside of the AMMC- 5620 chip is RF ground. For microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier or heatsink) using electrically conductive epoxy[1]. No ground wires are required because all ground connections are made with plated throughholes to the backside of the device. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plated metal shim (same length and width as the MMIC) under the chip, which is of the correct thickness to make the chip and adjacent circuit coplanar. Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. The amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. The location of the RF bond pads is shown in Figure 20. Note that all the RF input and output ports are in a GroundSignal- Ground configuration. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is sufficient for signal connections, however doublebonding with 0.7 mil gold wire or the use of gold mesh[2] is recommended for best performance, especially near the high end of the frequency range. 6 Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. Gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 ± 8 mS. A guided wedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 ± 2 °C. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100 µm thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up die with vacuum on die center.) This MMIC is also static sensitive and ESD handling precautions should be taken. Notes: 1. Ablebond 84-1 LM1 silver epoxy is recommended. 2. Buckbee-Mears Corporation, St. Paul, MN, 800-262-3824 VD1 Feedback network Feedback network Feedback network RF Output Matching Matching RF Input Matching Matching Figure 18. AMMC-5620 Schematic To power supply 100 pF chip capacitor Gold plated shim RF Input AMMC-5620 RF Output Figure 19. AMMC-5620 Assembly Diagram 7 875 (VDD) 1010 910 350 (RFOut) 350 (RFIn) 0 0 90 1315 1410 Figure 20. AMMC-5620 Bond Pad Locations. (dimensions in microns) Ordering Information: AMMC-5620-W10 = waffle pack, 10 devices per tray AMMC-5620-W50 = waffle pack, 50 devices per tray www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. Data subject to change. Copyright 2003 Agilent Technologies, Inc. May 21, 2004 5989-0530EN