FAIRCHILD RMDA29000

RMDA29000
27–31 GHz Drive Amplifier MMIC
General Description
Features
The Fairchild Semiconductor RMDA29000 is a high
efficiency driver amplifier designed for use in point to point
and point to multi-point radios, and various communications applications. The RMDA29000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
• 22dB small signal gain (typ.)
• 23dBm saturated power out (typ.)
• Circuit contains individual source Vias
• Chip Size 3.41mm x 1.62mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
Rjc
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
©2004 Fairchild Semiconductor Corporation
Ratings
+6
-2
+8
360
+10
-30 to +85
-55 to +125
Units
V
V
V
mA
dBm
°C
°C
38
°C/W
RMDA29000 Rev. C
RMDA29000
June 2004
Parameter
Frequency Range
Gate Supply Voltage1 (Vg)
Gain Small Signal
Gain Variation vs. Frequency
Power Output at 1dBm Compression
Power Output Saturated: (Pin = +4dBm)
Drain Current Small Signal
Drain Current at P1dB Compression
Power Added Efficiency (PAE): at P1db
OIP32
Input Return Loss
Output Return Loss
Min
27
18
21
5
5
Typ
-0.4
22
±1
21
23
250
270
8
30
10
8
Max
31
28
Units
GHz
V
dB
dB
dBm
dBm
mA
mA
%
dBm
dB
dB
Note:
1: Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 250mA.
2: 10MHz tone separation measured at 10dBm Power Out/tone.
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
RMDA29000
Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idg) = 250mA
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap
between the chip and the substrate material.
DRAIN
SUPPLY
Vd
MMIC CHIP
RF IN
RF OUT
GROUND
(Back of the Chip)
GATE SUPPLY
Vg
Figure 1. Functional Block Diagram
0.427
2.157
3.242
1.621
1.514
1.105
0.898
0.704
0.0
0.642
0.0
2.375
3.236
3.405
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 3.405mm x 1.621mm x 50µm Typical. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
RMDA29000
Application Information
RMDA29000
DRAIN SUPPLY
Vd = +5V
10000pF
L
10 0pF
BOND WIRE Ls
L
MMIC CHIP
RF IN
RF OUT
L
GROUND
(Back of Chip)
BOND WIRE Ls
10 0pF
L
10000pF
GATE SUPPLY
Vg
Figure 3. Recommended Application Schematic Circuit Diagram
Vdd (POSITIVE)
2 MIL GAP
DIE-ATTACH
80Au/20Sn
10000pF
100pF
ALUMINA
50Ω
RF INPUT
ALUMINA
50Ω
RF OUTPUT
100pF
L < 0.015"
(4 Places)
10000pF
Vg (NEGATIVE)
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Vd should be biased from 1 supply as shown. Vg should be biased from 1 supply.
Figure 4. Recommended Assembly Diagram
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 250mA.
The following sequence of steps must be followed to
properly test the amplifier:
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
Step 1: Turn off RF input power.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
An example auto bias sequencing circuit to apply negative
gate voltage and positive drain voltage for the above
procedure is shown below.
Step 3: Slowly apply positive drain bias supply voltage of
+5V to Vd.
D3
D1N6098
+6V
D2
D1N6098
C1
0.1µF
R1
3.0k
R3
1.0k
+
*
U2
V+
0
V-
2
–
–2.62V
R4
1.2k
R2
6.8k
LM2941T
1
AD820/AD
U1A
7400
0
0
3
2
CNT
5
4
IN
OUT
3
GND
C2
0.47µF
ADJ
1
0
0
MMIC_+VDD
C3
22µF
R6
1k
R5
3k
0
*Adj. For –Vg
–5V
MMIC_–VG
C4
0.1µF
*–5V Off: +3.33V
–5V Off: +1.80V
R7
8.2k
C5
0.1µF
R8
1.0k
0
0
0
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
RMDA29000
Recommended Procedure for Biasing and Operation
RMDA29000
Typical Characteristics
RMDA29000 S-Parameters vs. Frequency
5V, 250mA, T = 25°C
30
25
S21
20
15
Sij (dB)
10
5
0
S22
-5
-10
S11
-15
-20
24
25
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
RMDA29000 S21 vs. Frequency
Over Temperature 5V, 250mA
35
-35°C
30
+25°C
25
S21 (dB)
+85°C
20
15
10
5
0
26
27
28
29
30
31
32
FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
RMDA29000
Typical Characteristics (Continued)
RMDA29000 Gain vs. Pout
5V, 250mA, T = 25°C
29
27
30GHz
29GHz
25
31GHz
28GHz
GAIN (dB)
23
27GHz
21
19
17
15
13
0
10
5
15
20
25
30
Pout (GHz)
RMDA29000 PIP3 vs. Pout/Tone 10 MHz Tone Sep
5V, 250mA, T = 25‚C
40
28GHz
35
29GHz
OIP3L (dBm)
31GHz
30
30GHz
27GHz
25
20
15
0
5
10
15
20
25
Pout/TONE (dBm)
©2004 Fairchild Semiconductor Corporation
RMDA29000 Rev. C
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11