RMPA29000 27–30 GHZ 1 Watt Power Amplifier MMIC General Description Features The Fairchild Semiconductor’s RMPA29000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA29000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. • 23dB small signal gain (typ.) • 30dBm Pout at 1dB compression (typ.) • Circuit contains individual source vias • Chip size 5.20mm x 2.95mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) ©2004 Fairchild Semiconductor Corporation Ratings +6 -2 +8 1092 +18 -30 to +85 -55 to +125 Units V V V mA dBm °C °C 20 °C/W RMPA29000 Rev. D RMPA29000 June 2004 Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin = -1dBm) Gain Variation vs. Frequency Power Output at 1dBm Compression Power Output Saturated: (Pin = +10.5dBm) Drain Current at Pin = -1dBm Drain Current at P1dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (16dBm/tone) Input Return Loss (Pin = -1dBm) Output Return Loss (Pin = -1dBm) Min 27 18 28.5 Typ -0.4 23 ±1 30 30.5 700 850 23 37 10 10 Max 30 Units GHz V dB dB dBm dBm mA mA % dBm dB dB Note: 1. Typical range of negative gate voltages is -0.9 to 0.0V to set typical Idq of 700 mA. ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idq) = 700mA CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material. DRAIN SUPPLY (VDA & VDB) MMIC CHIP RF IN RF OUT GROUND (Back of the Chip) GATE SUPPLY (VGA & VGB) Figure 1. Functional Block Diagram 2.946 2.672 1.651 1.461 1.285 0.254 0.0 0.236 0.122 5.210 4.445 5.072 Dimensions in mm Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 5.210mm x 2.946mm x 50µm Typical. Back of chip is RF and DC Ground) ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Application Information RMPA29000 DRAIN SUPPLY (Vd = +5V) (Connect to both VDA & VDB) 10000pF L 100pF BOND WIRE Ls L MMIC CHIP RF IN RF OUT L GROUND (Back of Chip) 100pF BOND WIRE Ls L 10000pF GATE SUPPLY (Vg) (VGA and/or VGB) Figure 3. Recommended Application Schematic Circuit Diagram ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D 10000pF Vd (POSITIVE) DIE-ATTACH 80Au/20Sn 10000pF 2 MIL GAP 100pF 100pF 5 MIL THICK ALUMINA 50Ω 5 MIL THICK ALUMINA 50Ω RF OUTPUT RF INPUT 100pF 100pF 10000pF 10000pF L < 0.015" (4 Places) Vg (NEGATIVE) Vd (POSITIVE) Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should be biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply. Figure 4. Recommended Assembly and Bonding Diagram ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Vg (NEGATIVE) CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 700mA. The following sequence of steps must be followed to properly test the amplifier. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 1: Turn off RF input power. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Note: An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. D3 D1N6098 +6V D2 D1N6098 C1 0.1µF R1 3.0k R3 1.0k + * U2 V+ 0 V- 2 – +2.62V R4 1.2k R2 6.8k LM2941T 1 AD820/AD U1A 7400 0 0 3 2 CNT 5 4 IN OUT 3 GND C2 0.47µF ADJ 1 R6 R5 3k 0 1k 0 MMIC_+VDD C3 22µF 0 *Adj. For –Vg –5V MMIC_–VG C4 0.1µF *–5V Off: +3.33V –5V Off: +1.80V R7 8.2k C5 0.1µF R8 1.0k 0 0 0 ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Recommended Procedure for Biasing and Operation RMPA29000 Typical Characteristics RMPA29000 SS Gain vs. Frequency Vd = 5V, Idq = 700mA 25 24 GAIN (dB) 23 22 21 20 19 18 26 27 28 29 30 31 FREQUENCY (GHz) RMPA29000 P1dB vs. Frequency Vd = 5V, Idq = 700mA 31.0 P1dB (dBm) 30.5 30.0 29.5 29.0 28.5 28.0 25 26 27 28 29 30 31 32 FREQUENCY (GHz) RMPA29000 Power Out vs. Power In Idq = 700mA 31.00 30.00 29.00 29 GHz GAIN (dB) 28.00 27.00 26.00 25.00 27 GHz 24.00 28 GHz 23.00 30 GHz 22.00 Fixture Data 21.00 -1.00 1.00 3.00 5.00 7.00 9.00 11.00 Pin (dBm) ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Typical Characteristics (Continued) RMPA29000 Gain vs. Pin Vd = 5V, Idq = 700mA 25.00 24.50 27 GHz 24.00 GAIN (dB) 23.50 23.00 22.50 28 GHz 29 GHz 30 GHz 22.00 21.50 21.00 20.50 Fixture data 20.00 -1.00 1.00 3.00 5.00 7.00 9.00 11.00 Pin (dBm) RMPA29000 S21, S11, S22 Mag vs. Frequency Vd = 5V, Id = 700mA 30 S21 S21, S11, S22 MAG (dB) 20 10 0 S11 S22 -10 -20 -30 26 27 28 29 31 30 FREQUENCY (GHz) RMPA29000 Ids vs. Pin 1020 970 28 GHz Ids (mA) 920 27 GHz 29 GHz 870 30 GHz 820 770 720 670 Fixture data 620 -1.00 1.00 3.00 5.00 7.00 9.00 11.00 Pin (dBm) ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D RMPA29000 Typical Characteristics (Continued) RMPA29000 OIP3 vs. Output Power/Tone 10 MHz Tone Sep. Vds = 5V, Idq = 700mA 40 38 27 GHz OUTPUT IP3 (dBm) 36 28 GHz 29 GHz 34 30 GHz 32 30 28 26 24 22 20 10 11 12 13 14 15 16 17 18 19 20 21 22 23 OUTPUT POWER/TONE (dBm) ©2004 Fairchild Semiconductor Corporation RMPA29000 Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11