Pb Free Plating Product ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B G2300 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A Description The G2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G2300 is universally used for all commercial-industrial surface mount applications. Features *Low on-resistance *Capable of 2.5V gate drive *Small Package Outline Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings 20 ±8 6 4.8 20 1.25 0.01 -55 ~ +150 Symbol Rthj-a Value 100 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. 1/4 ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA IGSS - - ±100 nA VGS= ±8V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 28 - - 38 Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Total Gate Charge2 Qg - 10 - Gate-Source Charge Qgs - 3.6 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 8 - Tr - 6 - Td(off) - 19 - Tf - 7 - Input Capacitance Ciss - 550 - Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 80 - Symbol Min. Typ. Max. Unit VSD - 0.7 1.3 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A nC ID=6A VDS=10V VGS=4.5V ns VDD=10V ID=1A VGS=4.5V RG=0.2 pF VGS=0V VDS=15V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=1.25A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. 2/4 ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Characteristics Curve Fig 1. Typical Output Characteristics 0.07 Fig 2. On-Resistance v.s. Drain Current Characteristics 0.06 0.05 0.04 0.03 0.02 0.01 0 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Source-Drain Diode Forward Voltage Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2006/07/26 REVISED DATE :2006/11/09B Fig 7. Gate Charge Characteristics Fig 9. Transfer Characteristics Fig 8. Typical Capacitance Characteristics Fig 10. Single Pulse Power Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4