GTM GE03N70

Pb Free Plating Product
ISSUED DATE :2005/01/04
REVISED DATE :
GE03N70
BVDSS 600/650/700V
RDS(ON)
4.0
ID
3.3A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GE03N70 series are specially designed as main switching devices for universal 90~265VAC off-line
AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag
in the toughest power system with the best combination of fast switching, ruggedized design and
cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for
switch mode power supplies, DC-AC converters and high current high speed switching circuits.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching Speed
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
-/A/H
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
600/650/700
V
VGS
20
V
Continuous Drain Current , VGS@10V
ID @TC=25
3.3
A
Continuous Drain Current , VGS@10V
ID @TC=100
2.1
A
13.2
A
45
W
Pulsed Drain Current
1,
IDM
PD @TC=25
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
0.36
2
W/
EAS
85
mJ
Avalanche Current
IAR
3.3
A
Repetitive Avalanche Energy
EAR
3.3
mJ
Tj, Tstg
-55 ~ +150
Symbol
Value
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
2.8
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
1/5
ISSUED DATE :2005/01/04
REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Drain-Source Breakdown Voltage
BVDSS
Min.
Typ.
Max.
Unit
600
-
-
V
VGS=0, ID=250uA
-
650
-
-
V
VGS=0, ID=250uA
A
700
-
-
V
VGS=0, ID=250uA
H
-
0.6
-
V/
Test Conditions
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V
VDS=VGS, ID=250uA
gfs
-
2.0
-
S
VDS=10V, ID=1.6A
IGSS
-
-
1
uA
VGS=
-
-
100
uA
VDS=600V, VGS=0
-
-
500
uA
VDS=480V, VGS=0
RDS(ON)
-
-
4.0
Total Gate Charge
Qg
-
11.4
-
Gate-Source Charge
Qgs
-
3.1
-
Gate-Drain (“Miller”) Change
Qgd
-
4.2
-
Td(on)
-
8.4
-
Tr
-
6
-
Td(off)
-
17.7
-
Tf
-
5.9
-
Ciss
-
600
-
Output Capacitance
Coss
-
45
-
Reverse Transfer Capacitance
Crss
-
4
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.5
V
IS=3.3A, VGS=0V, Tj=25
IS
-
-
3.3
A
VD= VG=0V, VS=1.5V
ISM
-
-
13.2
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
Static Drain-Source On-Resistance
3
3
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
IDSS
Reference to 25 , ID=1mA
20V
VGS=10V, ID=1.6A
nC
ID=3.3A
VDS=480V
VGS=10V
ns
VDD=300V
ID=3.3A
VGS=10V
RG=10
RD=91
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=15mH, RG=25 , IAS=3.3A.
3. Pulse width 300us, duty cycle 2%.
2/5
ISSUED DATE :2005/01/04
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
3/5
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
4/5
ISSUED DATE :2005/01/04
REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
5/5