1/3 GM BT9013 N P N E PI TA XI A L T RA N SI STO R Description The GMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Package Dimensions Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. A B C D E F REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 40 - - V IC=100uA , IE=0 Test Conditions BVCEO 20 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=100uA, IC=0 ICBO - - 100 nA VCE=25V, IE=0 IEBO - - 100 nA VEB=3V, IC=0 VCE(sat) - - 0.6 V IC=500mA, IB=50mA VBE(sat) - - 1.2 V IC=500mA, IB=50mA V VCE=1V, IC=10mA VBE(on) HFE1 - - 0.9 112 180 300 VCE=1V, IC=50mA HFE2 40 - - fT 100 - - MHz - - 8 pF Cob VCE=1V,IC=500mA Classification Of hFE1 Rank hFE G H L 112-166 144-202 176-300 VCE=1V, IC=10mA,f=100MHz VCB=10V, f=1MHz, IE=0 2/3 Characteristics Curve 3/3 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165