GTM GMBT4401

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GM BT4401
NP N E PITAXI AL P L ANAR T RANS ISTO R
Description
The GMBT4401 is designed for general purpose switching amplifier applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
225
mW
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
60
-
-
V
IC=100uA
BVCEO
40
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10uA
ICEX
-
-
100
nA
VCE=35V, VBE= -0.4V
VCE(sat)1
-
-
0.4
V
IC=150mA, IB=15mA
VCE(sat)2
-
-
750
mV
IC=500mA, IB=50mA
VBE(sat)1
650
-
850
mV
IC=150mA, IB=15mA
V
VBE(sat)2
Test Conditions
-
-
1.2
hFE1
20
-
-
VCE=1V, IB=0.1mA
hFE2
40
-
-
VCE=1V, IC=1mA
hFE3
80
-
-
VCE=1V, IC=10mA
hFE4
100
-
300
VCE=1V, IC=150mA
hFE5
40
-
-
VCE=2V, IC=500mA
fT
250
-
-
MHz
-
-
6.5
pF
Cob
IC=500mA, IB=50mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
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Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4
FAX : 86-21-38950165