1/2 GBC817 NP N E PITAX I AL P L ANAR T RANS ISTO R Description The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current IC 800 mA Total Power Dissipation PD 225 mW Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVEBO 5 - - V IE=-100uA BVCEO 45 - - V IC=10mA BVCES 50 - - V IC=100uA ICES - - 100 nA VCE=25V IEBO - - 100 nA VEB=4V *VCE(sat) - - 700 mV IC=500mA, IB=50mA VBE(on) - - 1.2 V VCE=1V, IC=300mA hFE 100 - 630 fT - 100 - MHz Cob - - 12 pF Test Conditions VCE=1V, IC=100mA VCE=5V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0A 2/2 Classification Of hFE Rank hFE A 100-250 B 160-400 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 C 250-630