GTM GS3018K

Pb Free Plating Product
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/12B
GS3018K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
8
640mA
Description
The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GS3018K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
1,2
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
mA
mA
mA
W
W/
Tj, Tstg
Ratings
30
20
640
500
950
0.35
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
360
Unit
/W
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
1/4
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/12B
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.06
-
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V
VDS=VGS, ID=250uA
gfs
-
600
-
mS
VDS=10V, ID=600mA
IGSS
-
-
10
uA
VGS=
-
-
1
uA
VDS=30V, VGS=0
-
-
100
uA
VDS=24V, VGS=0
-
-
8
VGS=4V, ID=10mA
-
-
13
VGS=2.5V, ID=1mA
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
V/
Total Gate Charge2
Qg
-
1
1.6
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain (“Miller”) Change
Qgd
-
0.5
-
Td(on)
-
12
-
Tr
-
10
-
Td(off)
-
56
-
Tf
-
29
-
Input Capacitance
Ciss
-
32
50
Output Capacitance
Coss
-
8
-
Reverse Transfer Capacitance
Crss
-
6
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
20V
nC
ID=600mA
VDS=50V
VGS=4.5V
ns
VDS=30V
ID=600mA
VGS=10V
RG=3.3
RD=52
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Test Conditions
IS=1.2A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
2/4
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/12B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
ISSUED DATE :2005/04/27
REVISED DATE :2005/07/12B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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