Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B GS3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 8 640mA Description The GS3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS3018K is universally used for all commercial-industrial applications. Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V mA mA mA W W/ Tj, Tstg Ratings 30 20 640 500 950 0.35 0.01 -55 ~ +150 Symbol Rthj-a Ratings 360 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. 1/4 ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.06 - Gate Threshold Voltage VGS(th) 0.5 - 2.0 V VDS=VGS, ID=250uA gfs - 600 - mS VDS=10V, ID=600mA IGSS - - 10 uA VGS= - - 1 uA VDS=30V, VGS=0 - - 100 uA VDS=24V, VGS=0 - - 8 VGS=4V, ID=10mA - - 13 VGS=2.5V, ID=1mA Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ Total Gate Charge2 Qg - 1 1.6 Gate-Source Charge Qgs - 0.5 - Gate-Drain (“Miller”) Change Qgd - 0.5 - Td(on) - 12 - Tr - 10 - Td(off) - 56 - Tf - 29 - Input Capacitance Ciss - 32 50 Output Capacitance Coss - 8 - Reverse Transfer Capacitance Crss - 6 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 20V nC ID=600mA VDS=50V VGS=4.5V ns VDS=30V ID=600mA VGS=10V RG=3.3 RD=52 pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=1.2A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. 2/4 ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2005/04/27 REVISED DATE :2005/07/12B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4