INFRARED DETECTOR MCT photoconductive detector P2748/P5274 series, P3257-50 Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications l Choice of spectral response range (up to 25 µm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics. l Photoconductive element that decreases its resistance by input of infrared light l Micro-cooled type available This type of cooling does not require pour-filled liquid nitrogen. l Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area sizes and number of elements. Glass dewar type not requiring repumping is also provided. l FTIR l Infrared spectrophotometer l Thermal imaging l Remote sensing l CO2 laser detection Accessories (Optional) l Valve operator A3515 l Amplifiers for dewar type MCT photoconductive detector C5185 l Infrared detector module with preamp P7752-10 ■ General rating / Absolute maximum ratings Type No. P2748-40 P2748-41 P2748-42 P5274 P5274-01 P3257-50 Dimensional outline/ Window material * 1 Package ➀/Z ➁/Z Side-on type metal dewar Head-on type metal dewar ➀/Z ➀/K ➂/Z Side-on type metal dewar Stirling type metal Nitrogen maintenance Active area time Cooling Min. (h) (mm) 1×1 1×1 12 LN2 0.25 × 0.25 1×1 1×1 Micro-cooled 1×1 - Absolute maximum ratings Allowable Operating Storage current temperature temperature Topr Tstg (mA) (°C) (°C) 40 40 -40 to +60 -55 to +60 20 40 20 40 -40 to +55 -45 to +55 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. Measurement Peak Photo condition Cut-off sensitivity sensitivity *2 Ele m e nt wavelength wavelength S te m p erature λc λp λ=λp T (°C) (µm) (µm) (V/W) 1000 1000 10000 500 250 1000 D∗ (500, 1200, 1) D∗ (λp, 1200, 1) Min. Typ. (cm· Hz 1/2 /W) (cm· Hz 1/2 /W) (c m· Hz 1/2 / W) NEP λ=λp Rise Dark time resistance tr 0 to 63 % Rd (W/Hz1/2) 2.5 × 10-12 2.5 × 10-12 6.3 × 10-12 6.7 × 10-12 1.0 × 10-11 2.5 × 10-12 (µs) (Ω) P2748-40 P2748-41 2 × 1010 4.0 × 1010 0.6 40 12 14 1 × 1010 P2748-42 -196 P5274 14 17 2 × 109 1 × 1010 1.5 × 1010 0.6 30 9 9 P5274-01 17 22 1 × 10 5 × 10 1.0 × 1010 0.4 100 P3257-50 2 × 1010 4.0 × 1010 0.6 40 12 14 1 × 1010 *1: Window material K: KRS-5, Z: ZnSe *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current. 1 MCT photoconductive detector P2748/P5274 series, P3257-50 ■ Spectral response ■ S/N vs. bias current (Typ. T= -196 ˚C) 11 10 (Typ.) 20 P2748-40 D* 16 RELATIVE VALUE 1 D* (cm · Hz 2 /W) P5274 1010 9 10 P5274-01 12 S 8 4 N 108 0 5 10 15 20 0 25 5 10 15 20 BIAS CURRENT (mA) WAVELENGTH (µm) KIRDB0072EC KIRDB0073EB The detector must be operated in a range where the D* becomes Max. Spectral response can be shifted upon request. ■ Measurement circuit ■ Noise frequency characteristic (Typ. ) 100 CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER DETECTOR 1 NOISE (nV/Hz 2 ) 25 BLACK BODY 500 K 10 KIRDC0007EA 1 10 100 1000 10000 FREQUENCY (Hz) KIRDB0074EC 2 fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2 MCT photoconductive detector P2748/P5274 series, P3257-50 ■ Dimensional outlines (unit: mm) ➀ P2748-40/-42, P5274 series 28.5 PUMP-OUT PIPE 9.5 172 ± 2 102 ± 1 SIGNAL OUTPUT LEAD 10 ± 0.5 66.8 ± 1 10 ± 1 37 ± 1 PHOTOSENSITIVE SURFACE 95 ± 1 6.5 63.5 ± 1 72 ± 1 44.5 ± 1 46 ± 1 32 ± 1 51 ± 1 LN2 FILL PORT 12.5 DETECTOR NC DETECTOR KIRDA0131ED ➁ P2748-41 LN2 FILL PORT 12.5 32 ± 1 66 MAX. 46 ± 1 63.5 ± 1 28.5 OUTPUT PIN 51.2 ± 1 7.9 ± 1 173.5 ± 2 102 ± 2 95 ± 2 6.5 10 ± 0.5 PHOTOSENSITIVE SURFACE 70 ± 2 PUMP-OUT PORT 9.5 DETECTOR NC DETECTOR KIRDA0129EB 3 MCT photoconductive detector P2748/P5274 series, P3257-50 ➂ P3257-50 28.3 MAX. 23.8 10.6 MAX. 38.9 MAX. 12.8 PUMP-OUT VALVE 10 MAX. (2 ×) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE 12.7 29.0 MAX. +0 22 50.8 ± 0.1 OUTPUT PIN MOUNT SIDE 58 14.5 MAX. 50.3 MAX. 81.1 MAX. 43 36.4 (4 ×) 2.5 76.5 70.0 20.1 MAX. 39.4 50.1 MAX. PHOTOSENSITIVE SURFACE 25.9 34.8 MAX. 27.4 MAX. 26.8 FOV 56.0 ± 0.3 26.7 -0.01 Board thickness including mounted components: 20 MAX. KIR KIRDA0130EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1021E05 4 Mar. 2007 DN