INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range (TE-cooled type) Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in analytical instruments. Features Applications l High-speed response l Room temperature operation Compared to other types of detectors used in the same wavelength range, PbSe cells have higher response speed and can also operate at room temperature, making them useful in a wide range of applications such as gas analyzers, etc. l Lower temperature detection limit: 50 ˚C approx. l Radiation thermometer l Flame detector l Gas analyzer l Film thickness gauge Accessories (Optional) l Heatsink for one-stage TE-cooled type A3179 l Heatsink for two-stage TE-cooled type A3179-01 l Temperature controller for TE-cooled type C1103-04 l Preamplifier for PbS/PbSe photoconductive detector C3757-02 l Infrared detector module with preamp Non-cooled type P4245 Cooled type P4639 ■ Specification / Absolute maximum ratings Type No. P791-11 P791-13 P3207-05 P2038-02 P2038-03 P2680-02 P2680-03 Di mensional Package outline ➀ Cooling TO-5 Non-cooled TO-8 One-stage TE-cooled Two-stage TE-cooled ➁ ➂ ➃ Absolute maximum ratings Active Thermistor Thermistor TE-cooler Operating Storage Supply temperature temperature area resistance power current voltage Topr Tstg dissipation dissipation (mm) (mW) (A) (V) (°C) (°C) (kΩ) 2×2 3×3 2×2 2×2 100 -30 to +50 -55 to +60 1.5 3×3 9 0.2 2×2 1.0 3×3 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. Measurement Peak condition sensitivity Cut-off Element wavelength wavelength temperature λc λp T (°C) (µm) (µm) Photo sensitivity S *2 λ=λp Vs=15 V D∗ (500, 600, 1) Rise time D∗ tr (λp, 600, 1) 0 to 63 % Typ. Min. Typ. Min. (V/W) (V/W) (cm· Hz 1/2 /W) (cm· Hz 1/2 /W) (c m· Hz 1/2 / W) 7 × 102 1 × 103 5 × 107 1 × 108 1 × 109 3 × 102 5 × 102 7 × 102 1 × 103 8 × 108 3 3 2.2 × 10 3 × 10 1 × 108 3 × 108 3 × 109 1 × 103 1.3 × 103 2.7 × 103 4 × 103 2 × 108 4 × 108 4 × 109 1.2 × 103 2 × 103 P791-11 4.0 P791-13 25 4.8 1 4.3 P3207-05 * P2038-02 -10 4.1 5.1 P2038-03 P2680-02 -20 4.2 5.2 P2680-03 *1: Half width 400 nm *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance Dark resistance Rd Max. (µs) (MΩ) 3 0.3 to 1.5 1.7 to 7.0 5 1.8 to 8.0 1 PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 ■ Spectral response P791/P2038/P2680 series (Typ.) 100 RELATIVE VALUE (%) 80 60 -10 ˚C 40 25 ˚C 20 60 40 20 0 0 2 3 4 5 6 1 7 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 16.7 µW/cm2 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz Supply voltage is the value which contains load resistance S 5 6 7 KIRDB0281EA (Typ. Ta=25 ˚C) 3 10 18 LIGHT SOURCE: BLACK BODY 500 K 2 INCIDENT ENERGY: 16.7 µW/cm SUPPLY VOLTAGE: 15 V 15 S/N 12 300 9 N NOISE (µV) 600 200 4 ■ S/N vs. chopping frequency (Typ. Ta=25 ˚C) 400 3 KIRDB0280EA ■ S/N vs. supply voltage 500 2 WAVELENGTH (µm) WAVELENGTH (µm) 6 RELATIVE S/N 1 SIGNAL (µV) (Typ.) 100 -20 ˚C 80 RELATIVE VALUE (%) P3207-05 S 2 10 N 3 100 0 0 10 20 30 40 50 60 70 101 2 10 0 90 100 80 3 4 10 10 CHOPPING FREQUENCY (Hz) SUPPLY VOLTAGE (V) KIRDB0052EC KIRDB0053EB Increasing the chopping frequency reduces the 1/f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. ■ Photo sensitivity temperature characteristic 102 10 1 -20 -10 0 10 20 30 40 50 60 KIRDB0054EB Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. DARK RESISTANCE 10 2 101 -20 RISE TIME -10 0 10 20 30 40 50 60 ELEMENT TEMPERATURE (˚C) ELEMENT TEMPERATURE (˚C) 2 (Typ.) 103 LIGHT SOURCE: BLACK BODY 500 K SUPPLY VOLTAGE: 15 V INCIDENT ENERGY: 16.7 µW/cm2 CHOPPING FREQUENCY: 600 Hz RELATIVE VALUE RELATIVE SENSITIVITY 10 ■ Dark resistance, rise time temperature characteristics (Typ.) 3 KIRDB0055EB PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 ■ Photo sensitivity linearity (Typ. Ta=25 ˚C, FULLY ILLUMINATED) 2 101 RELATIVE SENSITIVITY (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 40 ELEMENT TEMPERATURE (˚C) 10 ■ Cooling characteristics of TE-cooler 100 10-1 -2 10 20 ONE-STAGE TE-COOLED 0 -20 TWO-STAGE TE-COOLED -40 DEPENDENT ON NEP 10-3 10-7 10-6 10-5 10-4 10-3 -60 10-2 0 0.2 0.4 INCIDENT ENERGY (W/cm2) 0.6 0.8 1.0 1.2 1.4 1.6 CURRENT (A) KIRDB0185EA KIRDB0056EA By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. ■ Current vs. voltage characteristics of the TE-cooler 1.6 ■ Thermistor temperature characteristic (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) (Typ.) 106 1.4 ONE-STAGE TE-COOLED RESISTANCE (Ω) CURRENT (A) 1.2 1.0 0.8 TWO-STAGE TE-COOLED 0.6 10 5 104 0.4 0.2 103 -40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VOLTAGE (V) -30 -20 -10 0 10 20 30 ELEMENT TEMPERATURE (˚C) KIRDB0116EA KIRDB0115EB ■ Connection example (P2680-03) CABLE (SUPPLIED WITH C3757-02) 2-CONDUCTOR SHIELDED CABLE C4696 CHOPPER P2680-03 + A3179-01 DETECTOR AND HEATSINK BNC CONNECTOR CABLE (SOLD SEPARATELY) C3757-02 C1103-04 POWER SUPPLY FOR PREAMP AMP LOCK-IN AMP or SPECTRUM ANALYZER SIGNAL PROCESSING CIRCUIT TEMPERATURE CONTROLLER CABLE (SUPPLIED WITH C1103-04) Connect C1103-04 and power supply ground terminals together. KIRDC0045EB 3 PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 ■ Dimensional outlines (unit: mm) ➀ P791-11/-13 ➁ P3207-05 9.1 ± 0.3 9.1 ± 0.3 8.1 ± 0.1 WINDOW 5.5 ± 0.1 WINDOW 5.5 ± 0.1 4.2 ± 0.2 3.0 ± 0.2 18 MIN. 0.45 LEAD 2.1 ± 0.2 2.1 ± 0.2 4.2 ± 0.2 PHOTOSENSITIVE SURFACE 0.4 MAX. 0.45 LEAD FILTER 18 MIN. 0.4 MAX. PHOTOSENSITIVE SURFACE 8.1 ± 0.1 5.1 ± 0.2 5.1 ± 0.2 DETECTOR DETECTOR GND 1.5 MAX. DETECTOR DETECTOR GND 1.5 MAX. KIRDA0056EC ➂ P2038-02/-03 KIRDA0118EA ➃ P2680-02/-03 PHOTOSENSITIVE SURFACE 0.45 LEAD 12 MIN. 0.45 LEAD 12 MIN. 4.3 ± 0.2 PHOTOSENSITIVE SURFACE 6.7 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 6.4 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 10 ± 0.2 15.3 ± 0.2 15.3 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 10.2 ± 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 5.1 ± 0.2 KIRDA0128EA KIRDA0125EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRDA1020E06 4 Mar. 2007 DN