Si photodiode S10043 Highly reliable photodiode for VUV detection The S10043 is a Si photodiode designed to detect high-power ArF excimer lasers (193 nm) with high accuracy and stability. By combining our newly developed technologies for forming ultra-thin PN junctions and high-reliability ultra-thin metal films, the S10043 shows almost no change in sensitivity even after exposure to ArF excimer laser beam of 1 kJ/cm2. Features Applications Greatly improved sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser ArF excimer laser detection Windowless package*1 Various UV detection Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature*2 Storage temperature*2 Symbol VR max Topr Tstg Value 5 -20 to +60 -55 to +80 Unit V °C °C *1: The S10043 uses a windowless package with no protection on the photodiode chip, and is shipped with the package held with glass tape. Remove the glass tape when using. *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S λ=193 nm Dark current ID VR=10 mV Terminal capacitance Ct VR=0 V, f=10 kHz VR=0 V, RL=1 kΩ Rise time tr 10 to 90% Min. 10 - Typ. 190 to 1000 720 15 0.1 4 Max. 1 - Unit nm nm mA/W nA nF - 9 - μs www.hamamatsu.com 1 Si photodiode S10043 Spectral response Variation in sensitivity due to VUV exposure [Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, λ=193 nm, pulse width=15 ns (FWHM)] (Typ. Ta=25 °C) 0.25 120 S10043 100 Relative sensitivity (%) 0.15 0.10 0.05 80 S8552, S8553 60 40 S1227/S1337 series (unsealed product) 20 0 100 200 300 400 500 600 700 800 900 1000 0 1 × 106 Wavelength (nm) 5 × 106 1 × 107 Number of shots KSPDB0257EA KSPDB0264EE Dimensional outline (unit: mm) 16.5 ± 0.2 X 15.0 ± 0.15 Y (10.5) 0.75 Photosensitive surface 2.15 ± 0.1 Photosensitive area 10 × 10 0.3 Black ceramic (2 ×) ϕ0.5 Fe·Ni·Co alloy 15.1 ± 0.3 Anode terminal mark Tape 12.5 ± 0.2 13.7 ± 0.3 Photosensitivity (A/W) 0.20 Chip position accuracy with respect to the package center -0.3≤X, Y≤+0.3 KSPDA0171EA 2 Si photodiode S10043 Handling precautions · Handle the photodiodes in a clean room. · Never touch the photodiode chip surface and wire bonding. · Wear dust-proof gloves and dust-proof mask. · Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface. · Do not clean the photodiodes by any method other than air blow. Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1072E02 Oct. 2015 DN 3