Si photodiodes / Selection guide

Selection guide - February 2014
Si Photodiodes
Lineup of Si photodiodes for UV to near IR, radiation
HAMAMATSU PHOTONICS K.K.
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Si Photodiodes
Lineup of Si photodiodes for UV to near IR, radiation
Si photodiode package ···················································· 5
Application examples ······················································ 8
Si photodiodes for precision photometry·····················
• For UV to near IR ····························································
• For UV to near IR (IR sensitivity suppressed type) ·······
• For visible range to near IR ············································
Contents
9
9
11
12
Si photodiodes for general photometry/visible range··· 13
• For visible range ····························································· 13
• For visible range to near IR ············································ 14
High-speed response Si PIN photodiodes ····················
• Cutoff frequency: 1 GHz or more ···································
• Cutoff frequency: 100 MHz to less than 1 GHz ············
• Cutoff frequency: 10 MHz to less than 100 MHz ·········
15
15
16
17
Multi-element type Si photodiodes ······························ 19
• Segmented type photodiodes ······································· 19
• One-dimensional photodiode arrays
(UV to near IR: UV sensitivity enhanced type) ··············· 20
Surface mount type Si photodiodes ·····························
• High-speed response Si PIN photodiodes ····················
• Segmented type Si photodiodes ···································
• Small plastic package type Si photodiodes ···················
• Small plastic package type Si PIN photodiodes ············
21
21
21
22
22
Si photodiodes with preamp, TE-cooled type Si photodiodes ···· 23
• Si photodiodes with preamp for measurement ············ 23
• TE-cooled type Si photodiodes ······································· 24
Si photodiodes for X-ray detection ······························ 25
• Si photodiodes with scintillator ····································· 25
• Large area Si PIN photodiodes ······································ 27
Special application Si photodiodes ······························
• RGB color sensors ··························································
• Violet/blue sensitivity enhanced type ····························
• For VUV (vacuum ultraviolet) detection ·························
• For monochromatic light detection ································
• For YAG laser detection ··················································
• Infrared sensitivity enhanced type ································
29
29
31
32
33
33
34
• For electron beam detector ··········································· 34
• CSP (chip size package) type ·········································· 35
Related products of Si photodiode ·······························
• RGB color sensor modules ············································
• Color sensor evaluation circuit ······································
• Driver circuit for Si photodiode array ·····························
• Photodiode modules ······················································
• Signal processing unit for photodiode module ·············
• Photosensor amplifier ····················································
• Charge amplifier ·····························································
36
36
36
37
37
37
38
39
Description of terms ······················································· 40
Principle of operation, equivalent circuit ····················· 41
Application circuit examples ········································· 42
Si photodiodes
Photodiodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is
illuminated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors
used to detect the intensity of light. Photodiodes can be classified by function and construction as follows:
• Si photodiode
• Si PIN photodiode
• Si APD (avalanche photodiode)
All of these types provide the following features and are widely used for the detection of the presence, intensity and color of
light.
•
•
•
•
•
•
Excellent linearity with respect to incident light
Low noise
Wide spectral response range
Mechanically rugged
Compact and lightweight
Long life
Si photodiodes manufactured utilizing our unique semiconductor process technologies cover a broad spectral range from the near
infrared to ultraviolet and even to high-energy regions. They also feature high-speed response, high sensitivity and low noise.
Si photodiodes are used in a wide range of applications including medical and analytical fields, scientific measurements, optical
communications and general electronic products. Si photodiodes are available in various packages such as metal, ceramic and
plastic packages as well as in surface mount types. We also offer custom-designed devices to meet special needs.
Hamamatsu Si photodiodes
Type
Feature
Product example
Si photodiode
• For UV to near IR
• For visible range to near IR
• For visible range
Featuring high sensitivity and low dark current, these Si photo - • RGB color sensor
diodes are specifically designed for precision photometry and gen- • Violet/blue sensitivity enhanced type
eral photometry/visible range.
• For VUV (vacuum ultraviolet) detection
• For monochromatic light detection
• For electron beam detector
• Infrared sensitivity enhanced type
Si PIN photodiode
• Cutoff frequency: 1 GHz or more
Si PIN photodiodes delivering high-speed response when operated
• Cutoff frequency: 100 MHz to less than 1 GHz
with a reverse bias are widely used for optical communications and
• Cutoff frequency: 10 MHz to less than 100 MHz
optical disk pickup, etc.
• For YAG laser detection
Multi-element type Si photodiode
Si photodiode arrays consist of multiple elements of the same size,
formed in a linear arrangement at an equal spacing in one package. • Segment type photodiode
These Si photodiode arrays are used in a wide range of applications • One-dimensional photodiode array
such as laser beam position detection and spectrophotometry.
Si photodiode with preamp,
TE-cooled type Si photodiode
Si photodiodes with preamp incorporate a photodiode and a preamplifier chip into the same package. TE- cooled type Si photo • For analytical and measurement instrument
diodes are suitable for low-light-level detection where a high S/N is
required.
Si photodiode for X-ray detection
These detectors are comprised of a Si photodiode coupled to a
• With scintillator
scintillator. These detectors are used for X-ray baggage inspection
• Large area Si PIN photodiodes
and non-destructive inspection.
Si APD*
• Near IR type
Si APDs are high-speed, high sensitivity photodiodes having an in• Short wavelength type
ternal gain mechanism.
• Multi-element type
Related product of Si photodiode
Hamamatsu provides various types of Si photodiode modules.
•
•
•
•
•
•
•
RGB color sensor module
Color sensor evaluation circuit
Driver circuit for Si photodiode array
Photodiode module
Signal processing unit for photodiode module
Photosensor amplifier
Charge amplifier
* Si APD is not listed in this catalogue.
Note: Hamamatsu also provides PSD (position sensitive detector) used to detect the position of incident light spot. PSD is a non-discrete photosensor utilizing the surface
resistance of photodiodes.
3
Si Photodiodes
Spectral response (typical example)
Hamamatsu provides a lineup that covers a variety of spectral response ranges from 200 nm to 1200 nm.
S1226/S1336-8BQ, S1227/S1337-1010BR
(Typ. Ta=25 °C)
0.8
QE=100%
Photosensitivity (A/W)
0.7
S1336-8BQ
(For UV to near IR)
0.6
S1337-1010BR
(For UV to near IR)
0.5
0.4
0.3
S1226-8BQ
(IR sensitivity
suppressed type)
0.2
0.1
0
200
S1227-1010BR
(IR sensitivity suppressed type)
300
400
500
600
700
800
900
1000
1100
1200
Wavelength (nm)
KSPDB0300EB
S3590-19, S11499, S9219
(Typ. Ta=25 °C)
0.8
QE=100%
S11499 series
(Infrared sensitivity
enhanced type)
Photosensitivity (A/W)
0.7
0.6
0.5
S3590-19
(Violet sensitivity
enhanced type)
0.4
0.3
S9219
(Visual-compensated type)
0.2
0.1
0
200
300
400
500
600
700
800
900
1000
1100
1200
Wavelength (nm)
KSPDB0301EA
Si Photodiodes
4
Si photodiode package
Hamamatsu provides a wide variety of packages including metal, ceramic, and plastic.
Si photodiodes for precision photometry
Type
For UV to near IR
For UV to near IR
(IR sensitivity
suppressed type)
For visible range to
near IR
Type no.
Page
Metal
S1336 series
9
Yes
S1337 series
(excluding S1337-21)
9
Yes
S1337-21
10
Yes
S2551
10
Yes
S2281 series
10
S1226 series
11
S1227 series
11
S2281- 01
11
S2386 series
12
S2387 series
12
Ceramic
Plastic
Glass epoxy With BNC connector
Remarks
Unsealed
Yes
Yes
Yes
Yes
Yes
Yes
Si photodiodes for general photometry/visible range
Type
Visual-sensitive
compensated
For visible
CIE standard
range
luminous
efficiency
approximation
For visible range to
near IR
Type no.
Page
S1087, S1133, S8265
13
S1787- 04
13
S9219
13
S9219 - 01
13
S7686
13
S1787-12, S4797-01
S4011-06DS
S1787-08, S2833-01
14
S1133-14, S1087- 01
S1133- 01
14
Metal
Ceramic
Plastic
Glass epoxy
With BNC connector
Remarks
Yes
Yes
Yes
Yes
Yes
Yes
Yes
High-speed response Si PIN photodiodes
Type
Cutoff frequency:
1 GHz or more
Cutoff frequency:
100 MHz to less than 1 GHz
Cutoff frequency:
10 MHz to less than 100 MHz
Type no.
Page
Metal
Ceramic
Plastic
S5973/S9055 series
15
Yes
S5971, S3399
S3883, S5972
16
Yes
S10783, S10784
16
Yes
S6775/S8385/
S8729/S2506 series
S6967, S4707-01
S6801-01
17
Yes
S5821/S1223 series
S3071, S3072
S12271
18
Glass epoxy
With BNC connector
Remarks
Glass epoxy
With BNC connector
Remarks
Yes
Multi-element type Si photodiodes
Type
5
Type no.
Page
Segmented type
Si photodiode
S3096-02, S4204, S9345
19
S4349
19
One-dimensional
photodiode array
S4111/S4114 series
20
S11212-021, S11299-021
20
Si Photodiodes
Metal
Ceramic
Plastic
Yes
Yes
Yes
Yes
Unsealed
Si photodiode package
Surface mount type Si photodiodes
Type
Type no.
Page
Metal
Ceramic
Plastic
Glass epoxy
With BNC connector
Remarks
High-speed response
Si PIN photodiode
S5106, S5107
S7509, S7510
21
Yes
Surface mount
type
Segmented type
Si photodiode
S5980, S5981
S5870
21
Yes
Surface mount
type
Small package type
Si photodiode
S9674
S10625 - 01CT
22
Yes
Surface mount
type
Small package type
Si PIN photodiode
S10933- 05GT
S12158- 01CT
22
Yes
Surface mount
type
Si photodiodes with preamp, TE-cooled type Si photodiodes
Type
Si photodiode
with preamp for
measurement
TE-cooled type
Si photodiode
Type no.
Page
Metal
S8745-01, S8746-01
S9295 series
23
Yes
S9269, S9270
23
S2592/S3477 series
24
Ceramic
Plastic
Glass epoxy With BNC connector
Plastic
Glass epoxy With BNC connector
Remarks
Yes
Yes
Si photodiodes for X-ray detection
Type
Si photodiode
with scintillator
Large area type
Si PIN photodiode
Type no.
Page
S8559, S8193
25
Metal
Ceramic
S11212/S11299 series
25
S3590 series
S8650
27
Yes
S2744/S3204
S3584/S3588 series
28
Yes
Remarks
With scintillator
Yes
Yes
With scintillator
Special application Si photodiodes
Type
RGB color sensor
Violet/blue sensitivity
enhanced type
For VUV
(vacuum ultraviolet)
detection
Type no.
Page
S7505-01, S9032-02
S9702
29
S10917-35GT
S10942- 01CT
29
S6428-01, S6429-01
S6430-01
30
S5973- 02, S9195
31
S3994- 01
31
S8551
32
Metal
Surface mount
type
Yes
Yes
Yes
32
S10043
32
S12742-254
33
Yes
S3759
33
Yes
S11499 series, S12028
34
Yes
For electron beam detector
S11141, S11142
34
CSP (chip size package)
type
S10356 - 01, S10355 - 01
35
Infrared sensitivity
enhanced type
Remarks
Surface mount
type
Yes
32
For YAG laser detection
Glass epoxy With BNC connector
Yes
S8552, S8553
High reliability type
Plastic
Yes
S9682, S9683
For monochromatic
light detection
Ceramic
Unsealed
Yes
Unsealed
Yes
Unsealed
Yes
Unsealed
Yes
Yes
Unsealed
Si Photodiodes
6
Variety of package types
Hamamatsu offers a diverse selection of package types to meet different customer needs. Metal packages are widely used in
applications requiring high reliability. Ceramic packages are used for general applications and plastic packages are used in
applications where the main need is low cost.
Other types are also available including those with BNC connector, which facilitates connection to coaxial cable, surface mount
types that support reflow soldering, and those with scintillator, which converts X-rays and radiation to visible light.
Metal
Ceramic
Plastic
Glass epoxy
With BNC connector
Surface mount type
With scintillator
Mount technology
At the Solid State Division of Hamamatsu Photonics, we are
CSP (Chip Size Package)
constantly at work designing and developing our own mount
technology to offer unique semiconductor devices having spe-
In CSP type photodiodes, the chip and substrate are connected
by bump electrodes so there is minimal dead area on the pack-
cial features.
Now we will take a brief look at our mount technology for Si
age surface area. This allows utilizing the photosensitive area
more effectively. Also multiple devices can be densely arrayed
photodiodes.
and used in a tile format. There is no wiring so coupling to the
scintillator is easy.
Flip chip bonding
Mounting technology for opto-semiconductors includes not only
Figure 2
the two-stage chip die-bonding and wire-bonding but also the
Cross section of CSP type photodiode
Si photodiode chip
Bump
Underfill resin
flip chip bonding as shown in Figure 1.
Parasitic capacitance and inductance can be a problem
when extracting opto-semiconductor device signals from a
wire. Flip-chip bonding can prevent this problem and help in
Substrate (PWB)
Solder ball
KSPDC0065EB
downsizing since it utilizes bumps to directly join the chip
to the package or an IC chip, etc.
Figure 1
Example of flip chip bonding
(a) Mounting to a board
Photodiode chip
Bump
Package mounting surface
(b) Mounting to an amplifier
Photodiode chip
Bump
(c) Mounting an amplifier to a photodiode
Amplifier chip
Bump
Amplifier chip
Si photodiode chip
KSPDC0060EA
7
Si Photodiodes
Application examples
Here, we will introduce several applications of our Si photodiodes.
Optical power meters
LCD backlight color adjustment
RGB color sensor
Large area Si PIN
photodiode
RGB-LED
D
KSPDC0082EA
KSPDC0077EA
Large area type Si PIN photodiodes are used to measure the
The RGB color sensor detects the white balance of LCD back-
light levels of various light sources such as laser diodes and
light optical waveguides and controls the light level of each RGB
LEDs.
LED to stabilize the LCD backlight color.
Spectrophotometers
Sunlight sensors
Si PIN photodiode
Focus lens
Si photodiode
array
Transmission grating
Collimating lens
Entrance slit
KSPDC0079EA
KSPDC0080EA
Si photodiodes are used to detect the amount of sunshine to
Si photodiode arrays are used to detect light that has been divided
control the volume of air flow for automotive air conditioners.
into wavelengths through a diffraction grating in spectrophotometers.
Radiation detectors
Baggage inspection equipment
X-ray source
Baggage under Low energy
inspection
X-ray
High energy
X-ray
Conveyor
Si PIN photodiode
with scintillator
Dryer image example
Si photodiode
with scintillator
KSPDC0078EA
KSPDC0081EA
Si PIN photodiodes with scintillators are used in detectors that
Si PIN photodiodes with scintillators are used in dual energy
measure radiation levels of γ rays and other rays.
imaging of baggage inspection equipment to obtain information about an object such as its type and thickness.
Si Photodiodes
8
Si photodiodes for precision photometry
For UV to near IR
These Si photodiodes have sensitivity in the UV to near IR range.
Photosensitivity
(A / W)
Spectral response
range
Type no.
λ=200 nm
(nm)
S1336-18BU
S1336-18BK
Terminal capacitance
VR=0 V
f=10 kHz
(pF)
20
20
1.1 × 1.1
30
65
2.4 × 2.4
50
150
3.6 × 3.6
100
380
5.8 × 5.8
Photosensitive
area size
Package
Photo
(mm)
0.075
190 to 1100
S1336-18BQ
λ=960 nm
(Typ. Ta=25 °C, unless otherwise noted)
Dark current
VR=10 mV
max.
(pA)
0.12
320 to 1100
-
S1336-5BQ
190 to 1100
0.12
S1336-5BK
320 to 1100
-
S1336-44BQ
190 to 1100
0.12
S1336-44BK
320 to 1100
-
S1336-8BQ
190 to 1100
0.12
S1336-8BK
320 to 1100
-
S1337-16BQ
190 to 1100
0.12
0.5
S1337-16BR
340 to 1100
-
0.62
S1337-33BQ
190 to 1100
0.12
0.5
S1337-33BR
340 to 1100
-
0.62
S1337-66BQ
190 to 1100
0.12
0.5
0.62
0.5
S1337-66BR
340 to 1100
-
S1337-1010BQ
190 to 1100
0.12
0.5
S1337-1010BR
340 to 1100
-
0.62
TO-18
TO-5
TO-8
1.1 × 5.9
50
65
2.4 × 2.4
30
Ceramic
100
380
5.8 × 5.8
200
1100
10 × 10
Spectral response
S1336-BK, S1337-BR
S1336-BQ/BU, S1337-BQ
(Typ. Ta=25 ˚C)
0.7
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
QE=100%
0.5
0.4
(Typ. Ta=25 ˚C)
0.7
S1336-BQ
S1337-BQ
0.3
0.2
S1336-18BU
0.1
0
190
400
600
0.5
QE=100%
0.4
S1337-BR
0.3
S1336-BK
0.2
0.1
800
0
190
1000
Wavelength (nm)
400
600
800
1000
Wavelength (nm)
KSPDB0262EE
KSPDB0309EA
Dark current vs. reverse voltage
S1336 series
S1337 series
(Typ. Ta=25 ˚C)
10 nA
(Typ. Ta=25 ˚C)
10 nA
S1337-66BQ/BR
S1336-8BQ/BK
1 nA
1 nA
Dark current
Dark current
S1337-1010BQ/BR
100 pA
10 pA
100 pA
S1337-16BQ/BR
10 pA
S1337-33BQ/BR
S1336-18BQ/BK/BU
S1336-44BQ/BK
1 pA
100 fA
0.01
1 pA
S1336-5BQ/BK
0.1
1
10
Reverse voltage (V)
KSPDB0100EA
9
Si Photodiodes
100 fA
0.01
0.1
1
10
Reverse voltage (V)
KSPDB0104EB
(Typ. Ta=25 °C, unless otherwise noted)
Terminal capacitance
VR=0 V
f=10 kHz
(pF)
(nm)
λ=200 nm
λ=960 nm
Dark current
VR=10 mV
max.
(pA)
S1337-21
190 to 1100
0.13
0.52
500
4000
18 × 18
Ceramic
(unsealed)
S2551
340 to 1060
-
0.6
(λ=920 nm)
1000
350
1.2 × 29.1
Ceramic
Spectral response
range
Type no.
Photosensitivity
(A / W)
Photosnsitive
area size
Package
Photo
(mm)
ϕ11.3
S2281*
190 to 1100
0.12
0.5
500
With BNC
connector
1300
ϕ7.98
S2281-04*
* Connecting a photodiode to the C9329 photosensor amplifier (using a BNC-BNC coaxial cable E2573) allows amplifying the photodiode’s weak photocurrent with low noise.
Spectral response
S1337-21
S2551
(Typ. Ta=25 ˚C)
0.7
0.6
QE=100%
0.4
0.3
0.2
0.1
0
190 300 400
Photosensitivity (A/W)
0.5
0.5
QE=100%
0.4
0.3
0.2
600 700
800 900 1000 1100
Wavelength (nm)
0.5
QE=100%
0.4
0.3
0.2
0.1
0.1
500
(Typ. Ta=25 °C)
0.7
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
(Typ. Ta=25 ˚C)
0.7
0.6
S2281, S2281-04
190 300 400
500
600 700
Wavelength (nm)
KSPDB0304EA
190 300 400
800 900 1000 1100
500
600 700
800 900 1000 1100
Wavelength (nm)
KSPDB0173EB
KSPDB0270EA
Dark current vs. reverse voltage
S1337-21
S2551
(Typ. Ta=25 ˚C)
100 nA
10 nA
Dark current
Dark current
1 nA
100 pA
1 nA
100 pA
100 pA
10 pA
10 pA
10 pA
1 pA
100 fA
0.01
(Typ. Ta=25 ˚C)
100 nA
10 nA
1 nA
Dark current
(Typ. Ta=25 ˚C)
100 nA
10 nA
S2281, S2281-04
0.1
1
Reverse voltage (V)
10
1 pA
0.01
1 pA
0.1
1
10
100
Reverse voltage (V)
KSPDB0305EA
100 fA
0.01
0.1
1
10
Reverse voltage (V)
KSPDB0175EB
KSPDB0271EB
Si Photodiodes
10
For UV to near IR (IR sensitivity suppressed type)
These Si photodiodes have suppressed IR sensitivity.
Spectral response
range
Type no.
λ=200 nm
(nm)
S1226-18BU
190 to 1000
S1226-18BQ
S1226-18BK
(Typ. Ta=25 °C, unless specified otherwise)
Dark current
VR=10 mV
max.
(pA)
Photosensitivity
(A / W)
λ=720 nm
Terminal capacitance
Photosensitive
VR=0 V
area size
f=10 kHz
(pF)
(mm)
Package
Photo
0.075
0.12
320 to 1000
-
S1226-5BQ
190 to 1000
0.12
S1226-5BK
320 to 1000
-
S1226-44BQ
190 to 1000
0.12
S1226-44BK
320 to 1000
-
S1226-8BQ
190 to 1000
0.12
S1226-8BK
320 to 1000
-
S1227-16BQ
190 to 1000
0.12
0.36
S1227-16BR
340 to 1000
-
0.43
S1227-33BQ
190 to 1000
0.12
0.36
S1227-33BR
340 to 1000
-
0.43
S1227-66BQ
190 to 1000
0.12
0.36
2
35
1.1 × 1.1
5
160
2.4 × 2.4
10
500
3.6 × 3.6
20
1200
5.8 × 5.8
170
1.1 × 5.9
160
2.4 × 2.4
20
950
5.8 × 5.8
50
3000
10 × 10
300
3200
ϕ11.3
TO-18
0.36
TO-5
TO-8
5
Ceramic
S1227-66BR
340 to 1000
-
0.43
S1227-1010BQ
190 to 1000
0.12
0.36
S1227-1010BR
340 to 1000
-
0.43
S2281-01
190 to 1000
0.12
0.36
With BNC
connector
Spectral response
S1226-BK, S1227-BR
(Typ. Ta=25 ˚C)
0.7
0.5
0.4
S1226-BQ
S1227-BQ
0.3
0.2
0.5
0.4
0.3
0.2
S1226-BU
0
190
0.6
S1227BR
400
QE=100%
0.5
0.4
0.3
0.2
0.1
0.1
0.1
(Typ. Ta=25 ˚C)
0.7
QE=100%
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.7
QE=100%
0.6
S2281-01
(Typ. Ta=25 °C)
Photosensitivity (A/W)
S1226-BU/BQ, S1227-BQ
S1226-BK
600
800
Wavelength (nm)
0
190
1000
400
600
800
Wavelength (nm)
KSPDB0263EE
0
190
1000
400
600
800
Wavelength (nm)
KSPDB0308EA
1000
KSPDB0320EA
Dark current vs. reverse voltage
S1226 series
S1227 series
(Typ. Ta=25 ˚C)
1 nA
1 nA
100 pA
100 pA
S2281-01
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
1 nA
S1227-1010BQ/BR
100 pA
S1226-44BQ/BK
10 pA
S1226-8BQ/BK
Dark current
Dark current
Dark current
S1227-66BQ/BR
10 pA
1 pA
1 pA
1 pA
S1227-33BQ/BR
S1226-5BQ/BK
S1227-16BQ/BR
S1226-18BQ/BK/BU
100 fA
0.01
0.1
1
Reverse voltage (V)
11
Si Photodiodes
10 pA
10
KSPDB0275EB
100 fA
0.01
0.1
1
Reverse voltage (V)
10
KSPDB0276EA
100 fA
0.01
0.1
1
Reverse voltage (V)
10
KSPDB0321EA
Si photodiodes for precision photometry
For visible range to near IR
These Si photodiodes offer enhanced sensitivity especially in the near IR range.
Type no.
Spectral response
range
Photosensitivity
λ=960 nm
(nm)
(A / W)
(Typ. Ta=25 °C, unless otherwise noted)
Terminal capacitance
Photosensitive
VR=0 V
area size
f=10 kHz
(pF)
(mm)
Dark current
VR=10 mV
max.
(pA)
Package
Photo
S2386-18K
2
140
1.1 × 1.1
S2386-5K
5
730
2.4 × 2.4
S2386-44K
20
1600
3.6 × 3.6
S2386-45K
30
2300
3.9 × 4.6
S2386-8K
50
4300
5.8 × 5.8
TO-18
S2386-18L
320 to 1100
0.6
TO-5
TO-8
1.1 × 5.9
S2387-16R
5
730
2.4 × 2.4
S2387-33R
50
4300
5.8 × 5.8
S2387-1010R
200
12000
10 × 10
S2387-130R
100
5000
1.2 × 29.1
S2387-66R
340 to 1100
0.58
Spectral response
Ceramic
Dark current vs. reverse voltage
S2386/S2387 series
S2386 series
(Typ. Ta=25 ˚C)
0.7
S2387 series
(Typ. Ta=25 ˚C)
1 nA
(Typ. Ta=25 ˚C)
1 nA
S2387-1010R
S2386 series
0.6
S2386-8K
100 pA
100 pA
S2387-66R
0.4
S2387 series
0.3
Dark current
0.5
Dark current
Photosensitivity (A/W)
QE=100%
10 pA
1 pA
10 pA
S2387-130R
1 pA
0.2
100 fA
0.1
0
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
10 fA
0.01
100 fA
S2386-18K/-18L/-5K/-44K/-45K
0.1
1
10
100
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KSPDB0272ED
10 fA
0.01
S2387-16R/-33R
KSPDB0113EB
KSPDB0117EB
Si Photodiodes
12
Si photodiodes for general photometry/visible range
For visible range
These Si photodiodes have sensitivity in the visible range.
Spectral
Peak sensitivity Photosensitivity
response range
wavelength
λ=λp
Type no.
(nm)
(nm)
(A / W)
(Typ. Ta=25 °C, unless otherwise noted)
Dark current
VR=1 V
max.
(pA)
Photosensitive
area size
Package
Photo
(mm)
Filter type (general use)
These are Si photodiodes with visible-compensated filters. The S8265 is a high humidity resistance type of S1133.
1.3 × 1.3
S1087
320 to 730
560
10
Ceramic
2.4 × 2.8
S1133
0.3
S8265
340 to 720
540
20
2.4 × 2.8
Ceramic
S1787-04
320 to 730
560
10
2.4 × 2.8
Plastic
Filter type (CIE spectral luminous efficiency approximation)
S9219
0.24
500
(VR=10 mV)
ϕ11.3
With BNC
connector
0.22
50
(VR=10 mV)
3.6 × 3.6
TO-5
0.38
20
2.4 × 2.8
Ceramic
380 to 780
550
S9219-01
S7686
480 to 660
Spectral response
S1087, S1133, S1787-04, S8265
S9219 series, S7686
(Typ. Ta=25 ˚C)
0.4
(Typ. Ta=25 ˚C)
100
90
QE=100%
Relative sensitivity (%)
Photosensitivity (A/W)
80
0.3
S8265
0.2
S1087
S1133
S1787-04
0.1
70
60
50
40
S9219 series
(vertical incidence)
30
20
CIE spectral
luminous
efficiency
10
0
300
400
500
600
700
800
900
KSPDB0277EC
Si Photodiodes
400
500
600
700
800
900
Wavelength (nm)
Wavelength (nm)
13
0
300
S7686
(vertical incidence)
KSPDB0285ED
For visible range to near IR
These Si photodiodes have sensitivity in the visible range to near IR.
Spectral response range
Type no.
(Typ. Ta=25 °C, unless otherwise noted)
Dark current
Peak sensitivity Photosensitivity
VR=1 V
wavelength
λ=λp
max.
(A / W)
(nm)
(pA)
(nm)
S1787-12
650
Photosnsitive
area size
Package
Photo
(mm)
2.4 × 2.8
0.35
Plastic
S4797-01
320 to 1000
1.3 × 1.3
20
720
0.4
S1133-14
2.4 × 2.8
S4011-06DS
1.3 × 1.3
Ceramic
S1787-08
Plastic
2.4 × 2.8
320 to 1100
S2833-01
960
0.58
10
1.3 × 1.3
S1087-01
Ceramic
2.4 × 2.8
S1133-01
Spectral response
S1787-12, S4797-01, S1133-14
S4011-06DS, S1787-08, S2833-01, S1087-01, S1133-01
(Typ. Ta=25 ˚C)
0.7
0.6
0.6
QE=100%
0.5
Photosensitivity (A/W)
Photosensitivity (A/W)
QE=100%
S4797-01
0.4
S1133-14
0.3
0.2
S1787-12
0.1
0
300
(Typ. Ta=25 ˚C)
0.7
0.5
0.4
0.3
0.2
0.1
400
500
600
700
800
900
1000
1100
Wavelength (nm)
KSPDB0279EF
0
300
400
500
600
700
800
Wavelength (nm)
900
1000
1100
KSPDB0286ED
Si Photodiodes
14
High-speed response Si PIN photodiodes
Cutoff frequency: 1 GHz or more
These Si PIN photodiodes deliver a wide bandwidth even with a low bias, making them suitable for high-speed photometry as
well as optical communications.
Cutoff frequency
Type no.
(GHz)
(Typ. Ta=25 °C)
Photosensitivity
(A / W)
Terminal capacitance
f=1 MHz
Photosensitive
area size
(mm)
λ=780 nm
λ=830 nm
(pF)
ϕ0.4
0.51
0.47
1.6
(VR=3.3 V)
Package
Photo
S5973
1
(VR=3.3 V)
S5973-01
TO-18
1.5
(VR=2 V)
S9055
0.8
(VR=2 V)
ϕ0.2
0.35
2
(VR=2 V)
S9055-01
0.25
0.5
(VR=2 V)
ϕ0.1
Spectral response
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
0.6
(Typ. Ta=25 ˚C)
10 pF
QE=100%
S5973/-01
Terminal capacitance
Photosensitivity (A/W)
0.5
0.4
0.3
S5973 series
0.2
S9055
1 pF
S9055-01
0.1
S9055 series
0
300
400
500
600
700
800
900
100 fF
0.1
1000
1
Wavelength (nm)
100
10
Reverse voltage (V)
KPINB0326EB
KPINB0332EA
Frequency response
S5973, S5973-01
S9055 series
[ λ=410 nm ]
5
(Typ. Ta=25 ˚C, λ=830 nm, VR=3.3 V, RL=50 Ω)
[ λ=830 nm ]
(Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω)
5
(Typ. Ta=25 ˚C, VR=2 V, RL=25 Ω)
5
S9055-01
-5
10 MHz
100 MHz
1 GHz
10 GHz
S9055
-15
100 kHz
-3
-5
S9055
-10
1 MHz
10 MHz
100 MHz
1 GHz
10 GHz
Frequency
KPINB0298EA
Si Photodiodes
-3
-5
-10
-10
Frequency
15
0
Relative output (dB)
-3
-15
1 MHz
S9055-01
0
Relative output (dB)
Relative output (dB)
0
-15
100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
10 GHz
Frequency
KPINB0277EB
KPINB0278EB
Cutoff frequency: 100 MHz to less than 1 GHz
These Si PIN photodiodes have a large photosensitive area ( ϕ0.8 to ϕ3.0 mm) yet deliver excellent frequency response characteristics (100 MHz to 500 MHz).
(Typ. Ta=25 °C)
Cutoff frequency
Type no.
(MHz)
Photosensitivity
(A / W)
Terminal capacitance
f=1 MHz
Photosensitive
area size
(mm)
λ=660 nm
λ=780 nm
(pF)
ϕ1.2
0.44
0.55
3
(VR=10 V)
S5971
Package
Photo
TO-18
100
(VR=10 V)
20
(VR=10 V)
ϕ3
S3399
0.45
300
(VR=20 V)
S3883
0.58
TO-5
6
(VR=20 V)
ϕ1.5
ϕ0.8
S10783
0.46
Plastic
0.52
300
(VR=2.5 V)
4.5
(VR=2.5 V)
S10784
S5972
500
ϕ3
0.45
0.51
ϕ0.8
0.44
0.55
Plastic
with lens
3
(VR=10 V)
TO-18
Spectral response
S5971, S3399, S3883
0.7
Photosensitivity (A/W)
0.5
0.4
S5971
0.3
QE=100%
0.6
QE=100%
0.6
0.2
S5972
(Typ. Ta=25 ˚C)
0.6
S10783
0.5
0.4
S10784
0.3
(Typ. Ta=25 ˚C)
0.7
Photosensitivity (A/W)
0.7
Photosensitivity (A/W)
S10783, S10784
(Typ. Ta=25 ˚C)
0.2
0.5
QE=100%
0.4
0.3
0.2
S3399, S3883
0
300
0.1
0.1
0.1
400
500
600
700
800
900
1000
0
300
1100
400
500
600
700
800
900
1000
0
300
1100
KPINB0316EC
500
600
700
800
900
1000
Wavelength (nm)
Wavelength (nm)
Wavelength (nm)
400
KPINB0355EC
KPINB0315ED
Terminal capacitance vs. reverse voltage
S5971, S3399, S3883
S10783, S10784
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
S5972
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
100 pF
S3883
10 pF
S5971
1 pF
0.1
1
10
100
Terminal capacitance
Terminal capacitance
Terminal capacitance
S3399
10 pF
1 pF
0.1
1
10
100
KPINB0341EC
1 pF
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
Reverse voltage (V)
10 pF
KPINB0358EC
KPINB0338EB
Si Photodiodes
16
Cutoff frequency: 10 MHz to less than 100 MHz
A wide variety of types are provided including a low-cost plastic package type and visible-cut type.
Cutoff frequency
Type no.
(MHz)
Photosensitivity
(A / W)
Photosensitive
area size
(mm)
λ=660 nm
λ=780 nm
0.45
0.55
0.54
(λ=830 nm)
0.68
(λ=λp)
0.4
0.48
15
(VR=10 V)
S6775
S6967
50
(VR=10 V)
S6775-01
15
(VR=10 V)
Photo
40
(VR=10 V)
50
(VR=10 V)
40
(VR=10 V)
12
(VR=5 V)
2×2
S8385-04
0.44
(λ=830 nm)
0.56
(λ=λp)
0.45
0.55
25
(VR=5 V)
S8729
Package
(pF)
5.5 × 4.8
S8385
(Typ. Ta=25 °C)
Terminal capacitance
f=1 MHz
Plastic
2 × 3.3
S8729-04
0.52
(λ=830 nm)
0.68
(λ=λp)
0.45
0.55
0.4
0.48
S8729-10
S2506-02
25
(VR=12 V)
16
(VR=5 V)
15
(VR=12 V)
2.77 × 2.77
S2506-04
0.25
(λ=830 nm)
0.56
(λ=λp)
S4707-01
20
(VR=10 V)
2.4 × 2.8
0.4
0.48
14
(VR=10 V)
S6801-01
15
(VR=10 V)
ϕ14
(lens diameter)
0.52
(λ=830 nm)
0.65
(λ=λp)
40
(VR=10 V)
Plastic with
ϕ14 mm lens
Spectral response
S6775/S6967/S2506 series
(Typ. Ta=25 ˚C)
0.8
(Typ. Ta=25 ˚C)
0.8
S8729-04
S6775
0.7
QE=100%
0.6
0.5
Photosensitivity (A/W)
Photosensitivity (A/W)
0.7
S8729
S8729-10
0.4
S8385-04
0.3
S8385
0.2
S4707-01, S6801-01
(Typ. Ta=25 ˚C)
0.8
S6775-01
0.7
QE=100%
QE=100%
S2506-02
0.6
Photosensitivity (A/W)
S8385/S8729 series
0.5
0.4
S6967
0.3
0.2
0.6
0.5
0.4
0.3
S6801-01
0.2
S4707-01
S2506-04
0.1
0
300
400
500
600
700
800
900
1000 1100
Wavelength (nm)
Si Photodiodes
0
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
KPINB0324EE
17
0.1
0.1
0
300
400
500
600
700
800
900
1000 1100
Wavelength (nm)
KPINB0167EG
KPINB0354EB
High-speed response Si PIN photodiodes
(Typ. Ta=25 °C)
Cutoff frequency
Type no.
Photosensitivity
(A / W)
Photosensitive
area size
(mm)
(MHz)
Terminal capacitance
f=1 MHz
λ=660 nm
λ=780 nm
(pF)
0.45
0.52
3
(VR=10 V)
Package
Photo
S5821
ϕ1.2
S5821-02
25
(VR=10 V)
TO-18
S5821-01
ϕ4.65
(lens diameter)
S5821-03
10
(VR=20 V)
S1223
30
(VR=20 V)
2.4 × 2.8
S1223-01
20
(VR=20 V)
3.6 × 3.6
20
(VR=20 V)
S3072
45
(VR=24 V)
ϕ3
7
(VR=24 V)
S3071
40
(VR=24 V)
S12271
60
(VR=100 V)
0.45
0.52
0.47
TO-5
0.54
18
(VR=24 V)
ϕ5
TO-8
0.5
(λ=960 nm)
ϕ4.1
10
(VR=100 V)
Spectral response
S5821 series, S3071, S3072
(Typ. Ta=25 ˚C)
0.4
S3071, S3072
0.3
S5821 series
0.2
0
300
0.6
QE=100%
0.4
0.3
0.2
0.1
0.1
400
500
600
700
800
900
0
300
1000 1100
Wavelength (nm)
(Typ. Ta=25 °C)
0.7
QE=100 %
0.5
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.5
(Typ. Ta=25 ˚C)
0.7
QE=100%
S12271
Photosensitivity (A/W)
0.7
0.6
S1223 series
0.5
0.4
0.3
0.2
0.1
400
500
600
700
800
900
0
190 300 400 500 600 700 800 900 1000 1100
1000 1100
Wavelength (nm)
KPINB0335EB
Wavelength (nm)
KPINB0143EB
KPINB0386EB
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
S3071
100 pF
S3072
10 pF
100 pF
S1223-01
10 pF
1
(Typ. Ta=25 °C)
1 nF
100 pF
10 pF
S1223
S5821 series
1 pF
0.1
S12271
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
Terminal capacitance
Terminal capacitance
S1223 series
Terminal capacitance
S5821 series, S3071, S3072
10
100
1 pF
0.1
1
10
100
KPINB0344EA
1
10
100
Reverse voltage (V)
Reverse voltage (V)
Reverse voltage (V)
1 pF
0.1
KPINB0146EA
KPINB0389EB
Si Photodiodes
18
Multi-element type Si photodiodes
Segmented type Si photodiodes
These Si PIN photodiode arrays consist of 2 or 4 elements having sensitivity in the UV to near IR range. (Typ. Ta=25 °C, unless otherwise noted)
Photosensitivity
(mm)
(A / W)
0.03
Photosensitive
area size
1.2 × 3
/2-segment
S3096-02
3.0
Number of
elements
Type no.
Cutoff frequency Dark current Terminal capacitance
VR=10 V
VR=10 V
VR=10 V
max.
f=1 MHz
RL=50 Ω
(MHz)
(nA)
(pF)
0.39
(λ=650 nm)
25
0.5*
5
0.45
(λ=650 nm)
30
1*
3
0.45
(λ=650 nm)
15
5*
0.45
(λ=720 nm)
20
(VR=5 V)
0.2
(VR=5 V)
Package
Photo
0.02
1×2
/2-segment
2
S4204
2.0
1.2
Plastic
S9345
B
4.1
A
1.5 × 1.5
+
1.5 × 4.1
1.5
0.02
1.0
(
4
Photodiode A
)(
10
Photodiode B
)
S4349
0.1
3×3
/4-segment
4
3.0
1.5
0.1
25
(VR=5 V)
TO-5
3.0
* Total number of elements
Spectral response
S3096-02, S4204
S9345
(Typ. Ta=25 ˚C)
0.8
0.8
S3096-02
0.7
0.7
S4204
0.5
0.4
0.3
0.2
0.1
500
600
700
800
900
0.6
0.5
0.4
0.3
0.5
0.4
0.3
0.2
0.1
0.1
400
500
Wavelength (nm)
600
700
800
900
0
190
1000 1100
QE=100%
0.6
0.2
0
300
1000 1100
Photosensitivity (A/W)
Photosensitivity (A/W)
Photosensitivity (A/W)
QE=100%
0.6
400
(Typ. Ta=25 ˚C)
0.8
0.7
QE=100%
0
300
S4349
(Typ. Ta=25 ˚C)
400
Wavelength (nm)
600
800
1000
Wavelength (nm)
KMPDB0134EE
KPINB0336ED
KMPDB0126EB
Dark current vs. reverse voltage
S3096-02, S4204
S9345
(Typ. Ta=25 °C)
1 nA
S4349
(Typ. Ta=25 °C)
100 nA
100 pA
10 nA
S4204
(Typ. Ta=25 °C)
1 nA
S3096-02
Dark current
Dark current
Dark current
100 pA
1 nA
100 pA
10 pA
1 pA
10 pA
10 pA
1 pA
0.01
0.1
1
10
100
Reverse voltage (V)
Si Photodiodes
0.1
1
10
100
10 fA
0.01
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KMPDB0136ED
19
1 pA
0.01
100 fA
KPINB0295EA
KMPDB0128EA
One-dimensional photodiode arrays (UV to near IR: UV sensitivity enhanced type)
These are Si photodiode linear arrays having rectangular elements equally spaced at a pitch of about 1 mm.
Number of
elements
Type no.
S4111-16Q
S4111-35Q
Element
pitch
(mm)
(mm)
(nm)
Photosensitivity
λ=960 nm
(A / W)
Dark current
VR=10 mV
max.
(pA)
Terminal
capacitance
VR=0 V
f=10 kHz
(pF)
5
200
10
550
190 to 1100
1.45 × 0.9
16
S4111-16R
Photosensitive
area size
/element
Spectral
response
range
340 to 1100
35
Package
Photo
0.58
190 to 1100
S4111-46Q
(Typ. Ta=25 °C, unless otherwise noted)
1.0
46
Ceramic
4.4 × 0.9
S4114-35Q
35
S4114-46Q
46
190 to 1000
0.50*1
60
35
340 to 1100
0.61*2
30
40
S11212-021
1.175 × 2.0
16
1.575
Glass epoxy
(unsealed)
S11299-021
*1: λ=800 nm
*2: λ=920 nm
Spectral response
S4111/S4114 series
S11212/S11299-021
(Typ. Ta=25 ˚C)
0.8
(Typ. Ta=25 ˚C)
0.8
QE=100%
0.7
0.7
Photosensitivity (A/W)
S4111-16Q/35Q/46Q
S4111-16R
0.5
0.6
Photosensitivity (A/W)
0.6
QE=100%
0.4
0.3
0.2
0.5
0.4
0.3
0.2
S4114 series
0.1
0.1
0
190
400
600
800
0
300
1000
400
500
Wavelength (nm)
600
700
800
900 1000 1100
Wavelength (nm)
KMPDB0112EC
KMPDB0357EA
Structure of photosensitive area (unit: mm)
S4111/S4114 series
S11212/S11299-021
1.175
ch N
Type no.
A
A
B
N
S4111-16R/-16Q
1.45
18.8
16
S4111/S4114-35Q
4.4
34.9
35
S4111/S4114-46Q
4.4
45.9
46
2.0
ch 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
B
KMPDA0227EB
0.4
KMPDA0228EC
A
Details of elements (S4111/S4114 series)
Type no.
C
B
B
C
S4111-16Q/16R 1.45
A
0.9
0.1
S4111-35Q/46Q
S4114-35Q/46Q
0.9
0.1
4.4
C
KMPDA0112EB
Si Photodiodes
20
Surface mount type Si photodiodes
High-speed response Si PIN photodiodes
These are photodiodes sealed in a chip carrier package suitable for surface mounting and allowed solder reflow mounting on PC
boards for automated processes.
(Typ. Ta=25 °C)
Cutoff frequency
VR=10 V
Photosensitive
area size
Spectral response
range
Photosensitivity
λ=960 nm
(MHz)
(mm)
(nm)
(A / W)
S5106
20
5×5
S5107
10
10 × 10
Type no.
Terminal capacitance
VR=10 V
f=1 MHz
(pF)
Package
Photo
40
150
320 to 1100
0.72
Ceramic
S7509
20
2 × 10
40
S7510
15
6 × 11
80
Segmented type Si photodiodes
These Si photodiodes consist of 2 or 4 elements and are integrated into a chip carrier package.
Number of
elements
Photosensitive area size
(mm)
(nm)
(Typ. Ta=25 °C)
Cutoff frequency Terminal capacitance
Photosensitivity
VR=10 V
VR=10 V
f=1 MHz
λ=960 nm
RL=50 Ω
(A / W)
(MHz)
(pF)
25
10
20
35
Package
Photo
5.0
0.03
Type no.
Spectral
response
range
5×5
/4-segment
S5980
0.03
5.0
10.0
0.03
4
10 × 10
/4-segment
S5981
0.03
10.0
S5870
10 × 10
/2-segment
2
0.72
Ceramic
10.0
320 to 1100
10
50
25
5
0.03
10.0
ch1
S8558
2 × 12.7
/16-segment
16
2.0
ch16
…
0.1
12.7
Spectral response
Terminal capacitance vs. reverse voltage
S5106, S5107, S7509, S7510, S5980, S5981, S5870
S8558
(Typ. Ta=25 ˚C)
0.8
0.5
0.4
0.3
0.2
0.6
QE=100 %
Terminal capacitance
Photosensitivity (A/W)
Photosensitivity (A/W)
QE=100%
0.5
0.4
0.3
0.2
S5107
S7510
S5106
S7509
0.1
400
500
600
700
800
900
1000 1100
Wavelength (nm)
0
200
400
600
800
1000
1200
Wavelength (nm)
KPINB0165EB
Si Photodiodes
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
0.7
0.1
21
(Typ. Ta=25 °C)
0.8
0.7
0.6
0
300
S5106, S5107, S7509, S7510
100 fF
0.1
1
10
100
Reverse voltage (V)
KMPDB0193EA
KPINB0128EB
Small package type Si photodiodes
These surface mount type Si photodiodes are mounted on small packages. They are tape packaged and allows solder reflow mounting.
(Typ. Ta=25 °C)
Spectral response
range
Photosensitive
area size
Type no.
(mm)
(nm)
2×2
S9674
Photosensitivity
λ=960 nm
Terminal capacitance
VR=0 V
f=10 kHz
(A / W)
(pF)
0.7
500
Package
320 to 1100
Glass epoxy
0.54
(λ=940 nm)
1.3 × 1.3
S10625-01CT
Photo
200
Small package type Si PIN photodiodes
These surface mount type Si PIN photodiodes are mounted on small packages. They are tape packaged and allows solder reflow mounting.
(Typ. Ta=25 °C)
Type no.
Photosensitive
area size
(mm)
Spectral response
range
(nm)
Photosensitivity
λ=960 nm
(A / W)
Terminal capacitance
f=1 MHz
(pF)
S10993-05GT
1.06 × 1.06
380 to 1100
0.6
6
(VR=2.5 V)
Package
Photo
Glass epoxy
2.77 × 2.77
S12158-01CT
320 to 1100
0.7
15
(VR=12 V)
Spectral response
S9674, S10625-01CT
0.8
S9674
Photosensitivity (A/W)
QE=100%
0.5
0.4
0.3
0.2
S12158-01CT
0.7
0.6
S10625-01CT
0.1
0
200
(Typ. Ta=25 °C)
0.8
0.7
Photosensitivity (A/W)
S10993-05GT, S12158-01CT
(Typ. Ta=25 °C)
0.6
QE=100%
0.5
0.4
0.3
S10993-05GT
0.2
0.1
400
600
800
1000
1200
Wavelength (nm)
0
200
400
600
800
1000
1200
Wavelength (nm)
KSPDB0315EA
KSPDB0318EA
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
1 nA
S12158-01CT
Dark current
100 pA
S10993-05GT
S10625-01CT
10 pA
S9674
1 pA
100 fA
0.01
0.1
1
10
100
Reverse voltage (V)
KSPDB0316EB
Si Photodiodes
22
Si photodiodes with preamp, TE-cooled type Si photodiodes
Si photodiodes with preamp for measurement
These are low noise photosensors incorporating a large area Si photodiode, op amp and feedback capacitance.
Spectral
response
range
Cooling
temperature Photosensitive
area size
ΔT
Type no.
(mm)
(°C)
(nm)
Photosensitivity
(V/nW)
λ=200 nm
λ=960 nm
2.4 × 2.4
S8745-01
NEP
λ=λp, f=10 Hz
(fW/Hz1/2)
0.12
0.52
5.8 × 5.8
Package
15
Metal
50
4
10 × 10
S9295-01
Photo
1
190 to 1100
S9295
(Typ. Ta=25 °C)
11
Non-cooled
S8746-01
Built-in
feedback
resistance
(GΩ)
0.9
5.1
30
10
5
5.8 × 5.8
S9269
12
340 to 1100
Non-cooled
10 × 10
S9270
-
0.62
1
Ceramic
16
NEP (noise equivalent power) vs. frequency
S8745-01
106
S8746-01
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp]
106
105
+1 MΩ
(external connected)
+1 MΩ
(external connected)
NEP (fW/Hz1/2)
NEP (fW/Hz1/2)
105
[Typ. Ta=25 ˚C, Vcc=±15 V, Cf=5 pF (built-in), RL=1 MΩ, dark state, λ=λp]
104
+11 MΩ
(external connected)
+111 MΩ
(external connected)
103
102
+11 MΩ
(external connected)
104
+111 MΩ
(external connected)
103
102
101
0.001
S8746-01
S8745-01
0.01
0.1
1
10
100
101
0.001
1000
0.01
Frequency (kHz)
0.1
1
10
100
KSPDB0237EA
KSPDB0238EA
S9295 series
S9269, S9270
(Typ. Vcc=±15 V)
3
10
(Typ. Ta=25 ˚C, Vcc=±15 V)
5
10
S9295-01
(Td=-5 ˚C)
10
4
10
3
10
2
10
1
S9270
NEP (fW/Hz1/2)
NEP (fW/Hz1/2)
2
10
S9295
(Td=-25 ˚C)
1
10
1
10
100
1000
10000
Frequency (Hz)
Si Photodiodes
10
0.001
0.01
0.1
1
10
100
1000
Frequency (kHz)
KSPDB0230EB
23
S9269
0
0
10
1000
Frequency (kHz)
KSPDB0241EA
TE-cooled type Si photodiodes
These photosensors combine a UV to near infrared Si photodiode with a TE-cooler and deliver low dark current.
Type no.
Cooling
temperature
ΔT
Photosensitive
area size
(°C)
(mm)
Spectral
response
range
(nm)
Peak sensitivity Dark current
wavelength
VR=10 mV
(nm)
NEP
(pA)
(W/Hz1/2)
S2592-03
2.4 × 2.4
10
8.1 × 10-15
S2592-04
5.8 × 5.8
25
1.3 × 10-14
(Typ. Ta=25 °C)
Package
Photo
TO-8
190 to 1100
35
960
S3477-03
2.4 × 2.4
10
8.1 × 10-15
S3477-04
5.8 × 5.8
25
1.3 × 10-14
TO- 66
Spectral response
Thermistor temperature characteristics
(Typ. Ta=25 ˚C)
0.7
QE=100%
0.5
5
Resistance (Ω)
Photosensitivity (A/W)
0.6
(Typ.)
6
10
0.4
0.3
10
4
10
0.2
0.1
3
190 300 400
500
600 700
800 900 1000 1100
Wavelength (nm)
10
-40
-30
-20
-10
0
10
20
30
Element temperature (˚C)
KSPDB0182EA
KIRDB0116EA
Si Photodiodes
24
Si photodiodes for X-ray detection
Si photodiodes with scintillator
These detectors are comprised of a Si photodiode coupled to a scintillator. Ceramic scintillators have sensitivity to X-rays about 1.2
times higher than CWO and offer high reliability. CsI scintillators also have high sensitivity and are low-cost.
The S11212 and S11299 series photodiode arrays have a back-illuminated structure. They realize superb spectral response and
sensitivity uniformity compared to our previous products.
Type no.
Scintillator
S8559
Photosensitive
area size
/element
(mm)
Number of
elements
(Typ. Ta=25 °C, unless otherwise noted)
Dark current
max.
V R =10 mV
(pA)
X-ray sensitivity*
CsI(TI)
Photo
52
5.8 × 5.8
S8193
Package
(nA)
1
50
Ceramic
GOS ceramic
30
S11212-121
CsI(TI)
6.0
S11212-321
GOS ceramic
3.5
S11212-421
Phosphor sheet
3.0
1.175 × 2.0
16
30
Glass epoxy
S11299-121
CsI(TI)
6.0
S11299-321
GOS ceramic
3.5
S11299-421
Phosphor sheet
3.0
* These are for reference (X-ray tube voltage: 120 kV, tube current: 1.0 mA, aluminum filter t=6 mm, distance: 830 mm), X-ray sensitivity depends on the X-ray equipment
operating and setup conditions.
Spectral response (S11212/S11299 series; without scintillator)
(Typ. Ta=25 ˚C)
0.8
0.6
0.5
0.4
0.3
(Typ. Ta=25 ˚C)
110
Relative sensitivity (%)
QE=100%
0.7
Photosensitivity (A/W)
Uniformity (S11212/S11299 series; without scintillator)
105
100
95
90
85
80
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15 16
0.2
Element no.
0.1
0
200
KMPDB0361EC
400
600
800
1000
1200
Wavelength (nm)
* Spectral response characteristics include the transmittance
and reflectance of the adhesive resin used to bond a scintillator.
KMPDB0360EB
25
Si Photodiodes
Emission spectrum of scintillator and spectral response
S11212/S11299-121
S11212/S11299-321
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
100
100
Spectral
response
Relative emission intensity (%)
80
80
CsI (Tl)
emission
spectrum
60
60
40
40
20
20
0
0
200
400
600
800
1000
Quantum efficiency (%)
Relative emission intensity (%)
Spectral response
80
80
Ceramic
scintillator
emission spectrum
60
60
40
40
20
20
0
0
1200
0
200
400
600
800
1000
Quantum efficiency (%)
100
0
1200
Wavelength (nm)
Wavelength (nm)
KSPDB0281EC
KSPDB0282EC
Typical scintillator characteristics
Parameter
Condition
Peak emission wavelength
(Typ. Ta=25 °C)
CsI(TI)
GOS ceramic
Unit
560
512
nm
X-ray absorption coefficient
100 keV
10
7
cm-1
Refractive index
λ=λp
1.7
2.2
-
1
3
μs
100 ms after X-ray turn off
0.3
0.01
%
4.51
7.34
g/cm3
Transparent
Light yellow-green
-
Decay constant
Afterglow
Density
Color
Sensitivity nonuniformity
±10
±5
%
Si Photodiodes
26
Large area Si PIN photodiodes
These Si PIN photodiodes, mounted on a white ceramic base, are specifically developed for applications in high energy physics
and are mainly used being coupled to a scintillator. Because of high resistance to high voltages, these Si PIN photodiodes operate
at high reverse voltages allowing a high-speed response despite the large photosensitive areas.
The S3590-18/-19 are violet sensitivity enhanced type and the S3590-19 is an unsealed type. To improve photodiode-to-scintillator
coupling efficiency, we also offer the S8650 with epoxy resin coating window processed to have a flat surface.
(Typ. Ta=25 °C, unless otherwise noted)
Type no.
Window
Depletion
Photosensitive
layer thickness
area size
VR=70 V
(mm)
S3590-08
Epoxy resin
S3590-09
Unsealed
S3590-18
Epoxy resin
(mm)
Spectral
response
range
(nm)
Terminal
Dark current capacitance
Photosensitivity
max.
VR=70 V
λ=960 nm
f=1 MHz
VR=70 V
(nA)
(A / W)
(pF)
0.66
Package
Photo
6
0.65
10 × 10
0.3
340 to 1100
40
10
S3590-19
Unsealed
0.58
S8650
Epoxy resin
0.66
Ceramic
6
Spectral response
S3590-08, S8650
S3590-09
(Typ. Ta=25 ˚C)
0.7
S3590-18/-19
(Typ. Ta=25 ˚C)
0.7
(Typ. Ta=25 ˚C)
0.7
QE=100%
QE=100%
0.6
0.3
0.2
0.1
Photosensitivity (A/W)
Photosensitivity (A/W)
Photosensitivity (A/W)
0.4
0
300
0.6
0.6
QE=100%
0.5
0.5
0.4
0.3
0.2
500
600
700
800
900
0
300
1000 1100
S3590-19
0.4
0.3
S3590-18
0.2
0.1
0.1
400
0.5
400
500
600
700
800
900
0
300
1000 1100
400
500
Wavelength (nm)
Wavelength (nm)
KPINB0347ED
600
700
800
900
Wavelength (nm)
KPINB0263EB
Terminal capacitance vs. reverse voltage
KPINB0322EC
Emission spectrum of scintillators and spectral response (S3590-08)
S3590 series, S8650
S3590-18/-19
S3590-08/-09
S8650
100 pF
10 pF
0.1
1
10
100
Reverse voltage (V)
Si Photodiodes
100
80
80
Nal(Tl)
BGO Csl(Tl)
60
60
40
40
Spectral
response
20
0
200
20
400
600
800
1000
0
1200
Wavelength (nm)
KPINB0331EC
27
Relative emission intensity (%)
Terminal capacitance
1 nF
(Typ. Ta=25 ˚C)
100
KPINB0017ED
Quantum efficiency (%)
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
1000 1100
Si photodiodes for X-ray detection
(Typ. Ta=25 °C, unless otherwise noted)
Type no.
Window
S2744-08
Epoxy resin
S2744-09
Unsealed
S3204-08
Epoxy resin
S3204-09
Unsealed
S3584-08
Epoxy resin
S3584-09
Unsealed
S3588-08
Epoxy resin
S3588-09
Unsealed
Photosensitive
area size
Depletion layer
thickness
VR=70 V
Spectral
response
range
(mm)
(mm)
(nm)
Terminal
Dark current capacitance
Photosensitivity
max.
VR=70 V
λ=960 nm
f=1 MHz
VR=70 V
(nA)
(A / W)
(pF)
10 × 20
10
85
18 × 18
20
130
0.3
340 to 1100
Package
0.66
Photo
Ceramic
28 × 28
30
300
3 × 30
10
40
Spectral response
S2744/S3588 series
S3204/S3584 series
(Typ. Ta=25 ˚C)
0.7
(Typ. Ta=25 ˚C)
0.7
S2744/S3588-09
S3204/S3584-09
0.6
0.5
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
QE=100%
0.4
S2744/S3588-08
0.3
0.2
0.1
0
300
0.5
QE=100%
0.4
S3204/S3584-08
0.3
0.2
0.1
400
500
600
700
800
900
0
300
1000 1100
Wavelength (nm)
400
500
600
700
900
800
1000 1100
Wavelength (nm)
KPINB0265EE
KPINB0277EC
Terminal capacitance vs. reverse voltage
S2744/S3588 series
S3204/S3584 series
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
(Typ. Ta=25 ˚C, f=1 MHz)
10 nF
1 nF
Terminal capacitance
Terminal capacitance
S3584-08/-09
S2744-08/-09
100 pF
10 pF
0.1
S3588-08/-09
1
10
100
S3204-08/-09
1 nF
100 pF
10 pF
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KPINB0222EA
KPINB0230EC
Si Photodiodes
28
Special application Si photodiodes
RGB color sensors
These photosensors are color sensors using a 3-element photodiode with color sensitivity, assembled in one package.
(Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral response sensitivity
range
wavelength
Type no.
(nm)
(nm)
S7505-01
S9032-02*1
S9702*1
S10917-35GT
S10942-01CT
Photosensitivity
λ=λp
(A / W)
Blue
400 to 540
460
Blue
0.18
Green
480 to 600
540
Green
0.23
Red
590 to 720
620
Red
0.16
Blue
400 to 540
460
Blue
0.18
Green
480 to 600
540
Green
0.23
Red
590 to 720
620
Red
0.16
Blue
400 to 540
460
Blue
0.18
Green
480 to 600
540
Green
0.23
Red
590 to 720
620
Red
0.16
Blue
390 to 530
460
Blue
0.2
Green
470 to 600
540
Green
0.23
Red
590 to 680
620
Red
0.17
Blue
0.21*2
Green
0.25*2
Red
0.45*2
See the spectral response.
Dark current
VR=1 V
Total number
of elements
max.
(pA)
200
Photosensitive
area size
Package
Photo
(mm)
Blue
1.5 × 1.5 (× 2)
Green
1.5 × 1.5
Red
1.5 × 1.5
Surface
mount type
plastic
100
ϕ2 / 3-segment
Surface
mount type
plastic
50
1 × 1 / 3-segment
Surface
mount type,
small
plastic
50
1 × 1 / 3-segment
Surface
mount type,
small,
glass epoxy
50
1 × 1 / 3-segment
Surface
mount type,
small
plastic
*1: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder.
*2: Blue: λ=460 nm, Green: λ=540 nm, Red: λ=640 nm
Spectral response
S7505-01, S9032-02, S9702
S10917-35GT
0.5
S10942-01CT
(Typ. Ta=25 °C)
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
0.5
0.3
Red
QE=100%
0.4
0.3
Green
0.2
Blue
Green
0.2
Blue
Red
0.1
Red
0.1
0
200
Photosensitivity (A/W)
Photosensitivity (A/W)
Photosensitivity (A/W)
0.4
400
600
Green
0.3
Blue
0.2
0.1
800
1000
Wavelength (nm)
0
200 300 400 500 600 700 800 900 1000 1100
400
600
800
1000
1200
Wavelength (nm)
Wavelength (nm)
KMPDB0217EB
0
200
KSPDB0295EA
KSPDB0287EA
This sensor also has sensitivity in the infrared
region, so cut off infrared light as needed.
29
Si Photodiodes
The S6428-01, S6429-01 and S6430-01 are monochromatic color sensors sensitive to blue, green and red light, respectively.
(Typ. Ta=25 °C, unless otherwise noted)
Peak
Spectral response sensitivity
range
wavelength
Type no.
Photosensitivity
λ=λp
(nm)
(nm)
(A / W)
S6428-01
400 to 540
460
0.22
S6429-01
480 to 600
540
0.27
S6430-01
590 to 720
660
0.45
Dark current
VR=1 V
max.
(pA)
Photosensitive
area size
20
2.4 × 2.8
Package
Photo
(mm)
Plastic
Spectral response
(Typ. Ta=25 ˚C)
0.5
S6430-01
QE=100%
Photosensitivity (A/W)
0.4
S6429-01
0.3
S6428-01
0.2
0.1
0
200
400
600
800
1000
Wavelength (nm)
KSPDB0280EB
Si Photodiodes
30
Violet/blue sensitivity enhanced type
These are photodiodes for blue laser diode detection.
Cutoff
frequency
(Typ. Ta=25 °C, unless otherwise noted)
Photosensitivity
Photosensitive Peak sensitivity
area size
wavelength
Terminal
capacitance
f=1 MHz
(MHz)
(mm)
(nm)
(A / W)
Dark current
max.
(nA)
S5973-02
1000
(VR=3.3 V)
ϕ0.4
760
0.3
(λ=410 nm)
0.1
(VR=3.3 V)
1.6
(VR=3.3 V)
TO-18
S9195
50
(VR=10 V)
5×5
840
0.28
(λ=405 nm)
5
(VR=10 V)
60
(VR=10 V)
TO-8
S3994-01
20
(VR=30 V)
10 × 10
960
0.25
(λ=400 nm)
10
(VR=30 V)
40
(VR=30 V)
Ceramic
Type no.
Package
Photo
(pF)
Spectral response
S5973-02
S9195
(Typ. Ta=25 ˚C)
0.7
S3994-01
(Typ. Ta=25 ˚C)
0.7
(Typ. Ta=25 ˚C)
0.7
QE=100%
0.6
0.6
0.4
0.3
0.2
Photosensitivity (A/W)
Photosensitivity (A/W)
Photosensitivity (A/W)
0.5
0.5
0.4
0.3
0.2
0.1
0.1
0
300
0.6
QE=100%
QE=100%
400
500
600
700
800
900
0
300
1000
0.5
0.4
0.3
0.2
0.1
400
500
Wavelength (nm)
600
700
800
900
0
300
1000
400
500
Wavelength (nm)
600
700
800
900
1000 1100
Wavelength (nm)
KPINB0337EC
KPINB0289EB
KPINB0198EB
Dark current vs. reverse voltage
S5973-02
S9195
(Typ. Ta=25 °C)
100 pA
S3994-01
(Typ. Ta=25 °C)
10 nA
(Typ. Ta=25 °C)
100 nA
1 nA
10 nA
Dark current
Dark current
Dark current
10 pA
100 pA
1 nA
1 pA
10 pA
100 fA
0.1
1
10
100
KPINB0400EA
Si Photodiodes
0.1
1
10
100
100 pA
0.01
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
Reverse voltage (V)
31
1 pA
0.01
KPINB0291EA
KPINB0199EA
Special application Si photodiodes
For VUV (vacuum ultraviolet) detection
These Si photodiodes are specially optimized for excimer laser detection (ArF: 193 nm, KrF: 248 nm): sensitive in the vacuum UV (VUV) range.
(Typ. Ta=25 °C, unless specified otherwise)
Type no.
Dark current
VR=10 mV
max.
(nA)
Photosensitivity
λ=193 nm
(A / W)
Photosensitive
area size
Package
Photo
(mm)
S8551
0.5
5.8 × 5.8
S8552
1.0
10 × 10
TO-8
(unsealed)
Ceramic
(unsealed)
5.0
18 × 18
S9682
0.5
5.8 × 5.8
TO-8
S9683
1.0
10 × 10
1-inch metal
0.06
S8553
High reliability type
The S10043 is greatly improved in sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser.
(Typ. Ta=25 °C, unless specified otherwise)
Type no.
S10043
(A / W)
Dark current
VR=10 mV
max.
(nA)
0.015
1.0
Photosensitivity
λ=193 nm
Variation in sensitivity due to UV exposure
120
Photosensitive
area size
Spectral response
(Typ. Ta=25 ˚C)
0.6
S8551, S8552, S8553
S10043 (no degradation)
Photosensitivity (A/W)
0.5
100
S8551, S8552, S8553
S9682, S9683
60
0.4
0.3
S9682, S9683
0.2
S10043
0.1
40
0
100 200 300 400 500 600 700 800 900 1000 1100
S1227/S1337 series
20
0 6
10
Wavelength (nm)
6
10
10
KSPDB0283EA
(Typ. Ta=25 ˚C)
0.20
7
0.18
S9682, S9683
Number of shots
0.16
KSPDB0264EC
Photosensitivity (A/W)
Relative sensitivity (%)
Photo
Ceramic
(unsealed)
10 × 10
[Typ. Ta=25 ˚C, ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz,
λ=193 nm, pulse width=15 ns (FWHM)]
80
Package
(mm)
0.14
0.12
0.10
0.08
S8551, S8552, S8553
0.06
S10043
0.04
0.02
0
150
200
250
300
350
400
Wavelength (nm)
KSPDB0284EA
Si Photodiodes
32
For monochromatic light detection
This photosensor uses an interference filter and has high sensitivity only to monochromatic light.
(nm)
(nm)
(A / W)
Dark current
VR=10 mV
max.
(pA)
254
10
0.018
25
Peak sensitivity Spectral response Photosensitivity
wavelength
λ=254 nm
half-width
Type no.
S12742-254
Photosensitive
area size
(Typ. Ta=25 °C, unless otherwise noted)
Package
Photo
(mm)
3.61 × 3.61
TO-5
Spectral response
(Typ. Ta=25 °C)
50
Photosensitivity (mA/W)
40
30
20
10
0
200
300
400
500
600
700
800
Wavelength (nm)
KSPDB0333EA
Note: Different types compatible with wavelengths other than the 254 nm center wavelength are also available (made-to-order product).
For YAG laser detection
This is a Si PIN photodiode developed to measure infrared energy emitted from YAG lasers (1.06 μm).
(mm)
(nm)
(nm)
(A / W)
Dark current
VR=100 V
max.
(nA)
ϕ5
360 to 1120
980
0.38
10
Photosensitive Spectral response Peak sensitivity Photosensitivity
area size
range
wavelength
λ=1060 nm
Type no.
S3759
Spectral response
(Typ. Ta=25 °C, unless otherwise noted)
Rise time
λ=1060 nm
VR=100 V, RL=50 Ω
(ns)
Package
12.5
TO-8
Photo
Response waveform
(Typ. Ta=25 ˚C)
0.8
100%
[Typ. Ta=25 ˚C, λ=1060 nm (YAG laser), VR=100 V, RL=50 Ω]
Photosensitivity (A/W)
0.7
0.6
QE=100%
0.5
50%
0.4
0.3
0.2
0.1
0
300
400 500 600 700 800 900 1000 1100 1200
12.5 ns
Wavelength (nm)
KPINB0279EB
33
Si Photodiodes
KPINB0280EC
Special application Si photodiodes
Infrared sensitivity enhanced type
These are Si PIN photodiodes that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode.
(Typ. Ta=25°C, unless otherwise noted)
Type no.
Photosensitive
area size
Spectral response
range
Photosensitivity
λ=1060 nm
Dark current
max.
(mm)
(nm)
(A / W)
(nA)
Terminal
capacitance
f=1 MHz
(pF)
0.6
5
(VR=20 V)
13
(VR=20 V)
TO-5
0.6
10
(VR=20 V)
33
(VR=20 V)
TO-8
0.5
(VR=10 V)
2
(VR=10 V)
4
(VR=10 V)
TO-18
S11499
ϕ3
S11499-01
ϕ5
360 to 1140
ϕ1.2
S12028
Package
Photo
Spectral response
S11499 series
(Typ. Ta=25 ˚C)
0.8
0.7
QE=100%
0.6
Photosensitivity (A/W)
0.6
(Typ. Ta=25 °C, VR=10 V)
0.8
S11499 series
0.7
Photosensitivity (A/W)
S12028
0.5
0.4
0.3
Conventional type
0.2
QE=100%
0.5
0.4
0.3
0.2
0.1
0.1
0
300 400 500 600 700 800 900 1000 1100 1200
0
200
400
Wavelength (nm)
800
600
1000
1200
Wavelength (nm)
KPINB0368EB
KPINB0376EC
For electron beam detector
These photodiodes directly detect low energy (10 keV or less) electron beams with high sensitivity. The structure with an extremely
thin dead layer (insensitive layer) makes these photodiodes ideal for backscattered electron detector for Scanning Electron Microscope
(SEM).
(Typ. Ta=25 °C, unless otherwise noted)
Type no.
Incident
electron
energy range
Output current
(keV)
(μA)
2 to 30
1.1
Electron energy: 5 keV
2
lp* =1 nA
S11141
(
S11142
Dark current Terminal
capacitance
VR=5 V
VR=5 V
max.
(pF)
(nA)
50
)
25
500
250
Cutoff
frequency
VR=5 V
(MHz)
Electron
multiplying
gain
Package
1100
Electron energy:
5 keV
Thin
ceramic
(unsealed)
4
7
(
)
Photo
*2: Probe current
Gain vs. electron energy
Electron multiplication principle
(Typ. Ta=25 ˚C, lp=1 nA)
10000
Output current
Silicon
Si photodiode
Gain
Vacuum
Electron
1000
Dead
layer
Detail
100
0
5
10
15
20
25
30
35
Electron energy (keV)
KSPDB0299EA
Generation of
electron-hole pairs
(electron multiplication)
Electrons generate ions as they pass through silicon. This ionization process generates a large number of
electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output
current by approximately 1000 times at an input electron energy of 5 keV (refer to "Gain vs. electron energy").
KSPDC0064EC
Si Photodiodes
34
CSP (chip size package) type
The S10356-01 and S10355-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device edges by
using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format.
Type no.
Package size
Spectral
response range
Peak sensitivity
wavelength
Photosensitivity
λ=960 nm
(mm)
(nm)
(nm)
(A / W)
3×3
S10356-01
400 to 1100
960
7.52 × 7.52
S10355-01
(Typ. Ta=25 °C)
0.7
Photosensitivity (A/W)
0.6
0.5
0.4
0.3
0.2
0.1
500
600
700
800
900
1000
1100
Wavelength (nm)
KSPDB0288ED
35
Si Photodiodes
Terminal
capacitance
VR=0 V, f=10 kHz
(μA)
(pF)
5
60
Package
PWB
(unsealed)
0.59
40
Spectral response
0
400
Short circuit
current
100 lx, 2856 K
500
(Typ. Ta=25 °C)
Photo
Related products of Si photodiode
RGB color sensor modules
For TFT-LCD monitor
RGB-LED backlight monitor for TFT-LCD (liquid crystal display)
Features
Applications
Built-in RGB color sensor (S9032-02)
Sensitivity matches wavelengths of RGB-LED
backlight for TFT-LCD.
3 ch current-to-voltage amplifiers
Simultaneous output of 3 ch RGB photocurrent
Configuration and size suitable for side mounting
to TFT-LCD
Suitable for lead-free solder
Low current consumption: 0.4 mA typ.
(1/3 than the conventional type)
High gain type (C9303-04)
RGB-LED backlight monitor for TFT-LCD
(Typ. Ta=25 °C)
Photosensitivity
(V/mW)
Type no.
λp=620 nm
λp=540 nm
λp=460 nm
Frequency bandwidth
Supply voltage
(kHz)
(V)
C9303-03
-14
-20
-18
DC to16
C9303-04
-108
-156
-122
DC to 2.4
+2.7 to +5.5
Color sensor evaluation circuit
Color sensor evaluation circuit board
Applications
Features
Evaluation of Hamamatsu color sensor
3 ch current-to-voltage conversion amplifier for
color sensor evaluation
Color sensors that mount on C9331:
S7505-01, S9032-02 (sold separately)
(Ta=25 °C, Vcc=9.0 V, common to each RGB channel)
Output offset voltage
Zt=5.1 × 10 5 V/A
[without photodiode]
(mV)
Type no.
C9331
Conversion
impedance
Frequency bandwidth
[without photodiode]
Supply voltage
Typ.
Max.
(V/A)
(kHz)
(V)
±40
±50
1 × 105 to 5.1 × 105
DC to 14
+7 to +15
Si Photodiodes
36
Driver circuit for Si photodiode array
Driver circuit for 16-element photodiode array
Features
High precision and high-speed measurement by simultaneous 16-channel readout
Assembled with pulse generator (8-step adjustable oscillatory frequency)
CLK, START, A/D conversion Trig and EOS pulse output
Choice of gain (conversion impedance): 1 × 10 6 V/A or 1 × 10 7 V/A
Single power supply operation: +12 V (AC adapter)
Type no.
C9004
Applicable sensor
Hamamatsu S4111-16 series, S5668 series photodiode arrays are directly mountable on board.
Photodiode modules
Integrates a Si photodiode for precision photometry with low-noise amplifier.
The C10439 series is a high-precision photodetector that combines a photodiode and currentto-voltage conversion amplifier.
Features
Easy handling
Two switchable photo-sensitivity ranges
Compact size
Type no.
Photosensitive
area size
(mm)
C10439-01
2.4 × 2.4
C10439-02
5.8 × 5.8
C10439-03
10 × 10
C10439-07
Si
C10439-08
5.8 × 5.8
10 × 10
C10439-11
Frequency bandwidth
-3 dB
Conversion impedance
High range
(mV/nW)
Low range
(mV/nW)
High range
(V/A)
Low range
(V/A)
High range
(Hz)
Low range
(Hz)
500
5
109
107
DC to 10
DC to 1000
InGaAs
ϕ1
ϕ3
0.5
0.005
106
1
Supply
voltage
Dimensions
W×D×H
(V)
(mm)
19 × 46 × 52
External
power supply
±5 to ±12
2.4 × 2.4
C10439-09
C10439-10
(Typ. Ta=25 °C)
Photosensitivity
λ=λp
104
DC to 1000
DC to 100000
19 × 50 × 52
0.01
Signal processing unit for photodiode module
Unit dedicated for photodiode module (C10439 series)
The C10475 converts the output from a photodiode module (C10439 series) into digital signals.
Also supplies power to the photodiode module.
Features
High-resolution digital output (16-bit)
Data logger function
RS-232C cable is optional.
(Typ. Ta=25 °C)
Type no.
C10475
37
Si Photodiodes
Digital output
Conforms to RS-232C
(16-bit)
Minimum measurement time interval
Supply voltage
(ms)
(V)
50
AC adapter (+12)
or battery
(one 9 V battery)
Dimensions
(W × D × H)
(mm)
110 × 100 × 30
Related products of Si photodiode
Photosensor amplifier
For low-light-level detection
Digital output function, current-to-voltage conversion amplifier for amplifying very
slight photocurrent with low noise
Features
Three sensitivity ranges
Selectable operation modes (analog output / digital output)
Serial connection (RS-232C) with PC
Data logger function, low battery function
Photodiode, coaxial cable with
BNC-BNC plug and RS-232C
cable are optional.
(Typ. Ta=25 °C)
Type no.
C9329
(V/A)
Frequency bandwidth
-3 dB
(Hz)
H
109
DC to 16
M
107
DC to 1600
L
5
DC to 1600
Range
Conversion impedance
10
Dimensions
(W × D × H)
(mm)
Power supply
(V)
AC adapter (+12)
or battery
(one 9 V battery)
115 × 90 × 40
With optical fiber
Light-to-voltage conversion amplifier with optical fiber
Features
Easy handling
Built-in photodiode allows easy detection of light just by connecting to a voltmeter, etc.
Optical fiber light input
Measures light at a narrow detection point. Separating the amplifier from the detection point
allows measurement in unusual environments and achieves low noise.
Three sensitivity ranges
Type no.
C6386-01
Photosensitivity
Conversion
impedance
(mV/μW)
(V/A)
Frequency bandwidth
-3 dB
(MHz)
H
30
105
DC to 1
M
3
104
DC to 3
L
0.3
103
DC to 10
Range
(Typ. Ta=25 °C)
Power supply
(V)
External power supply
(±15)
or batteries
(two 9 V batteries)
Dimensions
(W × D × H)
(mm)
115 × 90 × 40
High-speed type
Current-to-voltage conversion amplifier
Features
C8366: for high speed Si PIN photodiode
C8366-01: for high speed InGaAs photodiode
Wide bandwidth: DC to 100 MHz typ. (-3 dB; varied by the photodiode used)
Just inserting the photodiode leads makes the connection.
(Compatible with TO-8, TO-5 and TO-18 packages)
Adjustable response speed
Response speed can be adjusted by a trimmer potentiometer easily.
Compact size
Type no.
C8366
C8366 - 01
(Typ. Ta=25 °C)
Power supply
(V/A)
Frequency bandwidth
-3 dB
(MHz)
(V)
Dimensions
(W × D × H)
(mm)
103
DC to 100
External power supply (±15)
19 × 52 × 46
Conversion impedance
Si Photodiodes
38
Compact type
Current-to-voltage conversion amplifier for low-level-light
Features
Compact board type for easy assembly
Usable with photodiodes having large terminal capacitance
Conversion impedance: 1.0 × 10 8 V/A
Type no.
Power supply
(V/A)
(V)
Dimensions
(W × D × H)
(mm)
108
DC to 16
AC adapter (+12)
50 × 50 × 19
Conversion impedance
C9051
(Typ. Ta=25 °C)
Frequency bandwidth
-3 dB
(Hz)
Charge amplifier
For radiation and high energy particle detection
The H4083 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications
including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier
uses a low-noise junction type FET, which exhibits excellent performance when used with a photodiode having a large junction capacitance. The H4083 is especially suited for use with Hamamatsu
S3590/S3204 series, etc. Si PIN photodiodes. S3590 series photodiodes can be directly mounted on
the backside of the H4083, so there will be no increase in stray capacitance.
Applications
Features
Low noise
Compact and lightweight
Easy handling
Type no.
H4083
39
Si Photodiodes
Detection of X-rays, radiation, high energy
particles
(Typ. Ta=25 °C)
Amplification
method
Input/
output
polarity
Charge gain
Charge-sensitive type
Inverted
0.5 V/pC
22 mV/MeV (Si)
Current
Dimensions
Noise characteristic Negative feedback Power supply consumption (W × D × H)
constant
(e-/FWHM)
(V)
(mW)
(mm)
550
50 MΩ//2 pF
±12
150
24 × 19 × 4
Description of terms
Spectral response
Terminal capacitance: Ct
The photocurrent produced by a given level of incident light
varies with the wavelength. This relation between the photo electric sensitivity and wavelength is referred to as the
spectral response characteristic and is expressed in terms of
photosensitivity or quantum efficiency.
An effective capacitor is formed at the PN junction of a photodiode. Its capacitance is termed the junction capacitance
and is one of parameters that determine the response speed
of the photodiode. And it probably causes a phenomenon of
gain peaking in I/ V converter using operational amplifier. In
Hamamatsu, the terminal capacitance including this junction
capacitance plus package stray capacitance is listed.
Photosensitivity: S
This measure of sensitivity is the ratio of photocurrent expressed in amperes (A) — or output voltage expressed in
volts (V ) —to the incident light expressed in watts (W ). It
may be represented as either an absolute sensitivity (A /
W or VW unit) or as a relative sensitivity normalized for the
sensitivity at the peak wavelength, usually expressed in percent (%) with respect to the peak value. At Hamamatsu, we
usually use absolute sensitivity to express photosensitivity,
and the spectral response range is defined as the region in
which the relative sensitivity is higher than 5% or 10% of
the peak value.
Rise time: tr
This is the measure of the time response of a photodiode to
a stepped light input, and is defined as the time required for
the output to change from 10 % to 90 % of the maximum
light level (steady output level).
Cutoff frequency: fc
The frequency at which the photodiode output decreases by
3 dB from the output in the frequency region where the output is constant. The rise time (tr) has a relation with the cutoff frequency (fc) as follows:
Quantum efficiency: QE
The quantum efficiency is the number of electrons or holes
that can be detected as a photocurrent, divided by the number of incident photons. This is commonly expressed in
percent (%). The quantum efficiency and photo sensitivity S
have the following relationship at a given wavelength (nm):
QE =
S × 1240
λ
× 100 [%]
Short circuit current: Isc
The output current that flows through the photodiode when
the load resistance is 0. This is often called ”white light
sensitivity” with regards to the spectral response, and a
tungsten lamp of 2856 K distribution temperature (color
temperature) is used for the light source. At Hamamatsu, we
indicate the short circuit current at 100 lx illuminance in the
table of characteristics in our catalogues.
Open circuit voltage: Voc
The open circuit voltage is a photovoltaic voltage generated
when the load resistance is infinite. The open circuit voltage
depends on the light level, but for light levels higher than extremely low levels, it is nearly constant.
Dark current: I D
0.35
fc [Hz]
NEP (noise equivalent power)
The NEP is the amount of light equivalent to the noise level
of a device. It is the light level required to obtain a signal-tonoise ratio of unity. Our data sheets show the NEP values
measured at the peak wavelength λp. Since the noise level is
proportional to the square root of the frequency bandwidth, the
NEP is measured at a bandwidth of 1 Hz.
NEP [W/Hz1/2] =
Noise current [A/Hz1/2]
Photo sensitivity [A/W] at λp
Maximum reverse voltage: VR max
Applying a reverse voltage to a photodiode triggers a breakdown at a certain voltage and causes severe deterioration of
the device performance. Therefore the absolute maximum rating is specified for reverse voltage at the voltage somewhat
lower than this breakdown voltage. The reverse voltage shall
not exceed the maximum rating, even instantaneously.
Reference (Physical constants related to light and opto-semiconductors)
Constant
The dark current is a small current which flows when a reverse voltage is applied to a photodiode even in dark state.
This is a major source of noise for cases in which a reverse
voltage is applied to photodiodes (PIN photodiode, etc.).
Shunt resistance: Rsh
The voltage-to-current ratio in the vicinity of 0 V in photodiodes. The shunt resistance is defined as follows: Where I D
is the dark current at V R =10 mV.
Rsh [Ω] =
tr [s] =
0.01 [V]
ID [A]
For applications where no reverse voltage is applied, noise
resulting from the shunt resistance becomes predominant.
Symbol
Value
Electron charge
q
1.602 × 10-19
Unit
C
Speed of light in vacuum
c
2.998 × 108
m/s
Planck’s constant
h
6.626 × 10-34
J·s
Boltzmann’s constant
k
1.381 × 10-23
J/K
Thermal energy at room temperature
kT
0.0259 (300 K)
eV
Energy of 1 eV
eV
1.602 × 10-19
J
Wavelength equivalent to 1 eV in vacuum
—
1240
nm
Permittivity of vacuum
εo
8.854 × 10-12
F/m
Relative premittivity of silicon
εsi
Approx. 12
—
Relative premittivity of silicon oxide film
εox
Approx. 4
—
Band gap energy of silicon
Eg
Approx. 1.12 (25 °C)
eV
Si Photodiodes
40
Principle of operation, equivalent circuit
Principle of operation
Equivalent circuit
Figure 1 shows a cross section of a photodiode. The P-layer
An equivalent circuit of a photodiode is shown in Figure 3.
material at the active surface and the N material at the sub-
Photodiode equivalent circuit
,
I
ID
VD
μm or less and the neutral region at the junction between the
P- and N-layers is known as the depletion layer. By controlling
Rs
Cj
Io
Load
IL
selective diffusion of boron, to a thickness of approximately 1
Vo
Figure 3
converter. The usual P-layer for a Si photodiode is formed by
Rsh
strate form a PN junction which operates as a photoelectric
RL
the thickness of the outer P-layer, N-layer and bottom N + -layer
as well as the doping concentration, the spectral response and
frequency response can be controlled.
KPDC0004EA
If the light energy is greater than the band gap energy (Eg), the
electrons are pulled up into the conduction band, leaving holes
in their place in the valence band (see Figure 2). These electronhole pairs occur throughout the P-layer, depletion layer and
N-layer materials. In the depletion layer the electric field accelerates these electrons toward the N-layer and the holes toward
IL :
VD :
ID :
Cj :
Rsh:
I’ :
RS :
Vo :
Io :
Current generated by the incident light (proportional to the amount of light)
Voltage across the diode
Diode current
Junction capacitance
Shunt resistance
Shunt resistance current
Series resistance
Output voltage
Output current
the P-layer. Of the electron-hole pairs generated in the N-layer,
the electrons, along with electrons that have arrived from the
Using the above equivalent circuit, the output current Io is
P-layer, are left in the N-layer conduction band. The holes at this
given as follows:
time are being diffused through the N-layer up to the depletion
layer while being accelerated, and collected in the P-layer valence band. In this manner, electron-hole pairs which are generated in proportion to the amount of incident light are collected
in the N- and P-layers. This results in a positive charge in the
,
,
q VD
Io = IL - ID - I = IL - IS (exp
- 1) - I ............ (1)
kT
Is :
q:
k :
T:
Photodiode reverse saturation current
Electron charge
Boltzmann’s constant
Absolute temperature of the photodiode
P-layer and a negative charge in the N-layer. When an electrode
is formed from each of the P-layer and N-layer, and connected
The open circuit voltage Voc is the output voltage when Io
to external circuit, electrons will flow away from the N-layer,
equals zero and expressed by equation (2).
and holes will flow away from the P-layer toward the opposite
respective electrodes. These electrons and holes generating a
,
Voc = k T ln IL - I + 1 ............ (2)
q
Is
(
)
current flow in a semiconductor are called the carriers.
Figure 1
If I’ is negligible, since Is increases exponentially with respect
Si photodiode cross section
to ambient temperature, Voc is inversely proportional to the
ambient temperature and proportional to the log of I L . How-
Insulation layer
Negative electrode
(cathode)
Depletion layer
Positive electrode
(anode)
ever, this relationship does not hold for very low light levels.
The short circuit current Isc is the output current when the
Incident light
load resistance (R L ) = 0 and Vo = 0, and is expressed by equa+
Short
wavelength
-
+
+
tion (3).
+
Long
wavelength
-
(
Isc = IL - Is exp
In the above relationship, the 2nd and 3rd terms limit the lin-
N-layer
KPDC0002EA
wide range.
Depletion layer
N-layer
Incident light
- -
+
- -
Conduction
band
Band gap
energy
+ +
+
Valence
band
KPDC0003EA
41
Si Photodiodes
earity of Isc. However, since Rs is several ohms and Rsh is
10 7 to 1011 ohms, these terms become negligible over quite a
Si photodiode P-N junction state
P-layer
-
)
N N+
P-layer
Figure 2
q × Isc × Rs
×
- 1 - Isc Rs ...... (3)
Rsh
kT
Application circuit examples
Low-light-level detection circuit
Low-light-level detection circuits require measures for reducing
electromagnetic noise in the surrounding area, AC noise from
the power supply, and internal op amp noise, etc.
Figure 4 shows one measure for reducing electromagnetic
noise in the surrounding area.
Figure 4
Low-light-level sensor head
(a) Example using shielded cable to connect to photodiode
Rf1
Rf2
Metal package
PD
SW1
SW2
Cf
μ
10 μ
+5 V
0
-5 V
Figure 5
Photosensor amplifiers
(a) C6386-01
(b) C9051
-
IC2
+
Vo
+
IC1
Shielded
cable
Isc
+
10
+
ing a circuit board made from material having high insulation
resistance. As countermeasures against current leakage from
the surface of the circuit board, try using a guard pattern or elevated wiring with teflon terminals for the wiring from the photodiode to op amp input terminals and also for the feedback
resistor (Rf) and feedback capacitor (Cf) in the input wiring.
Hamamatsu offers the C6386-01, C9051 and C9329 photosensor amplifiers optimized for use with photodiodes for low-lightlevel detection.
10-turn
potentiometer
Metal shielded box
1
BNC
coaxial
cable,
etc.
KSPDC0051EC
(b) Example using metal shielded box that contains entire circuit
Rf1
Rf2
SW1
SW2
+ μ
10
+
10 μ
Cf
PD
-
IC2
-
ISC
+
The photodiodes, and coaxial
cables with BNC-to-BNC
plugs are sold separately.
Vo
+
IC1
(c) C9329
+5 V
0
-5 V
10-turn
potentiometer
Metal shielded box
KSPDC0052EB
Light-to-logarithmic-voltage conversion circuit
(c) Example using optical fiber
Rf1
Rf2
PD
Optical
fiber
ISC
Cf
-
IC1
+
SW1
SW2
+
10 μ
+
10 μ
-
IC2
+
+5 V
0
-5 V
Vo
10-turn
potentiometer
Metal shielded box
KSPDC0053EB
Bold lines should be within guarded pattern or on teflon terminals.
IC1 : AD549, OPA124, etc.
IC 2 : OP07, etc.
Cf : 10 pF to 100 pF, polystyrene capacitor
Rf : 10 GΩ max.
SW : Low-leakage reed relay, switch
PD : S1226/S1336/S2386 series, S2281, etc.
The voltage output from a light-to-logarithmic voltage conversion circuit (Figure 6) is proportional to the logarithmic change
in the detected light level. The log diode D for logarithmic
conversion should have low dark current and low series resistance. A Base-Emitter junction of small signal transistors or
Gate-Source junction of connection type of FETs can also be
used as the diode. I B is the current source that supplies bias
current to the log diode D and sets the circuit operating point.
Unless this I B current is supplied, the circuit will latch up when
the photodiode short circuit current I SC becomes zero.
Figure 6
Light-to-logarithmic-voltage conversion circuit
D
Vo = Isc × Rf [V]
Extracting the photodiode signal from the cathode terminal is
another effective means. An effective countermeasure against
AC noise from the power supply is inserting an RC filter or an
LC filter in the power supply line. Using a dry cell battery as the
power supply also proves effective way. Op amp noise can be
reduced by selecting an op amp having a low 1/f noise and low
equivalent input noise current. Moreover, high-frequency noise
can be reduced by using a feedback capacitor (Cf) to limit the circuit frequency range to match the signal frequency bandwidth.
Output errors (due to the op amp input bias current and input
offset voltage, routing of the circuit wiring, circuit board surface leak current, etc.) should be reduced, next. A FET input
op amp with input bias currents below a few hundred fA or
CMOS input op amp with low 1/f noise are selected. Using an
op amp with input offset voltages below several millivolts and
an offset adjustment terminal will prove effective. Also try us-
Io
+15 V
IB
-
R
PD
D:
IB :
R:
Io :
IC :
+
Isc
IC
Vo
-15 V
Diode of low dark current and low series resistance
Current source for setting circuit operation point, IB << Isc
1 GΩ to 10 GΩ
D saturation current, 10-15 to 10-12 A
FET-input Op amp, etc.
Vo ≈ -0.06 log (
Isc + IB
+ 1) [V]
Io
KPDC0021EA
Light integration circuit
This is a light integration circuit using integration circuits of
photodiode and op amp and is used to measure the integrated
power or average power of a light pulse train with an erratic
pulse height, cycle and width.
The integrator IC in the figure 7 accumulates short circuit current Isc generated by each light pulse in the integration capaciSi Photodiodes
42
tance C. By measuring the output voltage Vo immediately before
reset, the average short circuit current can be obtained from the
integration time (to) and the capacitance C. A low dielectric absorption type capacitor should be used as the capacitance C to
eliminate reset errors. The switch SW is a CMOS analog switch.
Light integration circuit
Figure 7
+15 V
10 k
C
13
1
1k
2 SW
14
Isc
2
3
Reset input
Isc
+15 V
7
IC
+
4
-
PD
1k
7
6
VO
t
VO
-15 V
t
Reset
input
to
Basic illuminometer (2)
This is an basic illuminometer circuit using a visual-compensated Si photodiode S7686 and an op amp. A maximum of 10000
lx can be measured with a voltmeter having a 1 V range. It
is necessary to use a low consumption current type op amp
which can operate from a single voltage supply with a low input bias current.
An incandescent lamp of 100 W can be used for approximate
calibrations in the same way as shown above “Basic illuminometer (1)”. To make calibrations, first select the 10 mV/lx range
and short the wiper terminal of the variable resistor VR and the
output terminal of the op amp. Adjust the distance between
the photodiode S7686 and the incandescent lamp so that the
voltmeter reads 0.45 V. (At this point, illuminance on S7686
surface is about 100 lx.) Then adjust VR so that the voltmeter
reads 1.0 V. Calibration has now been completed.
Figure 9
t
Basic illuminometer (2)
Reset input: Use TTL “L” to reset.
IC : LF356, etc.
SW: CMOS 4066
PD : S1226/S1336/S2386 series, etc.
C : Polycarbonate capacitor, etc.
Vo = Isc × to ×
1M
10 mV/lx
100 k
1 mV/lx
10 k
0.1 mV/lx
100 p
VR
1
[V]
C
2
KPDC0027EB
3
PD
Basic illuminometer (1)
Isc
A basic illuminometer circuit can be configured by using Hamamatsu C9329 photosensor amplifier and S9219 Si photodiode
with sensitivity corrected to match human eye response. As
shown in Figure 8, this circuit can measure illuminance up to
a maximum of 1000 lx by connecting the output of the C9329
to a voltmeter in the 1 V range via an external resistive voltage
divider.
A standard light source is normally used to calibrate this circuit,
but if not available, then a simple calibration can be performed
with a 100 W white light source.
To calibrate this circuit, first select the L range on the C9329
and then turn the variable resistor VR clockwise until it stops.
Block the light to the S9219 while in this state, and rotate the
zero adjusting volume control on the C9329 so that the voltmeter reads 0 mV. Next turn on the white light source, and adjust
the distance between the white light source and the S9219 so
that the voltmeter display shows 0.225 V. (The illuminance on
the S9219 surface at this time is approximately 100 lx.) Then
turn the VR counterclockwise until the voltmeter display shows
0.1 V. The calibration is now complete.
After calibration, the output should be 1 mV/lx in the L range,
and 100 mV/lx in the M range on the C9329.
500
1k
7
-
IC
+
4
6
8
1k
006 p
(9 V)
V Voltmeter
VR: Meter calibration trimmer potentiometer
IC : TLC271, etc.
PD: S7686 (0.45 μA/100 lx)
KPDC0018ED
Light balance detection circuit
Figure 10 shows a light balance detector circuit utilizing two Si
photodiodes PD 1 and PD 2 connected in reverse-parallel and an
op amp current-voltage converter circuit.
The photoelectric sensitivity is determined by the feedback
resistance Rf. The output voltage Vo of this circuit is zero if the
amount of light entering the two photodiodes PD 1 and PD 2 is
equal. By placing two diodes D in reverse parallel with each
other, Vo will be limited range to about ±0.5 V in an unbalanced state, so that the region around a balanced state can be
detected with high sensitivity. This circuit can be used for light
balance detection between two specific wavelengths using optical filters.
Figure 10
Light balance detection circuit
Rf
D
D
Figure 8
ISC2
Basic illuminometer (1)
PD2
PD
Photosensor
amplifier
ISC
Coaxial cable
E2573
C9329
-
IC
PD1
+
+15 V
7
6
4
Vo
-15 V
1k
PD: S1226/S1336/S2386 series, etc.
IC : LF356, etc.
D : ISS226, etc.
VR
1k
CW
V
Vo = Rf × (Isc2 - Isc1) [V]
(Vo<±0.5 V)
Externally connected
voltage divider circuit
KPDC0017EB
PD: S9219 (4.5 μA/100 lx)
KSPDC0054EB
Si Photodiodes
2
3
500
43
ISC1
Application circuit examples
Light absorption meter
High-speed photodetector circuit (1)
This is a light absorption meter using a dedicated IC and two
photodiodes which provides a logarithmic ratio of two current
inputs (See Figure 11). By measuring and comparing the light
intensity from a light source and the light intensity after transmitting through a sample with two photodiodes, light absorbance by the sample can be measured.
To make measurements, optical system such as the incident
aperture should first be adjusted to become the output voltage Vo to 0 V so that the short circuit current from the two Si
photodiodes is equal. Next, the sample is placed on the light
path of one photodiode. At this point, the output voltage value
means the absorbance by the sample. The relationship be tween the absorbance A and the output voltage Vo can be directly read as A=-Vo [V]. If a filter is interposed before the light
source as shown in the figure 11, the absorbance of specific
light spectrum or monochromatic light can be measured.
Figure 11
Light absorption meter
+15 V
Isc1
Sample
PD
Vo
A
+
Filter
Isc2
100 p
The high-speed photodetector circuit shown in Figure 13 utilizes a low-capacitance Si PIN photodiode (with a reverse voltage
applied) and a high-speed op amp current-voltage converter
circuit. The frequency band of this circuit is limited by the op
amp device characteristics to less than about 100 MHz.
When the frequency band exceeds 1 MHz, the lead inductance
of each component and stray capacitance from feedback resistance Rf exert drastic effects on device response speed. That
effect can be minimized by using chip components to reduce
the component lead inductance, and connecting multiple resistors in series to reduce stray capacitance.
The photodiode leads should be kept as short as possible and
the pattern wiring to the op amp should be made as short and
thick as possible. This will lower effects from the stray capacitance and inductance occurring on the circuit board pattern of
the op amp inputs and also alleviate effects from photodiode
lead inductance. Moreover, a ground plane structure utilizing
copper plating at ground potential across the entire board surface will prove effective in boosting device performance.
A ceramic capacitor should be used as the 0.1 μF capacitor
connected to the op amp power line, and the connection to
ground should be the minimum direct distance.
Hamamatsu offers C8366 photosensor amplifier for PIN photodiodes with a frequency bandwidth up to 100 MHz.
-15 V
Figure 13
A : Log amp
PD: S5870, etc.
High-speed photodetector circuit (1)
+15 V
Vo = log (ISC1/ISC2) [V]
10 μ
KPDC0025EC
PD
+
Rf
ISC
0.1 μ
51 Ω
+15 V
Vo
7
23
Total emission measurement of LED
0.1 μ
IC
+ 14 6
0.1μ
-15 V
Since the emitting spectral width of LEDs is usually as narrow
as about several-ten nanometers, the amount of the LED emission can be calculated from the Si photodiode photosensitivity
at a peak emission wavelength of the LED. In Figure 12, the inner surface of the reflector block B is mirror-processed so that
it reflects the light emitted from the side of the LED towards
the Si photodiode. Therefore, the total amount of the LED
emission can be detected by the Si photodiode.
Figure 12
10 k
PD: High-speed PIN photodiode (S5971, S5972, S5973, etc.)
Rf : Two or more resistors are connected in series to eliminate parallel capacitance.
IC : AD745, LT1360, HA2525, etc.
Vo = -Isc × Rf [V]
KPDC0020ED
Figure 14
Photosensor amplifier C8366
Total emission measurement of LED
Isc
IF
Po
LED
PD
A
B
High-speed photodetector circuit (2)
A : Ammeter, 1 mA to 10 mA
PD: S2387-1010R
B : Aluminum block, inner Au plating
S : Photosensitivity of Si photodiode
Refer to the spectral response chart in the datasheets.
S2387-1010R: S ≈ 0.58 A/W (λ=930 nm)
Po : Total emission
Po ≈ Isc [W]
S
KPDC0026EA
The high-speed photodetector circuit in Figure 15 uses load
resistance R L to convert the short circuit current from a lowcapacitance Si PIN photodiode (with a reverse voltage applied)
to a voltage, and amplifies the voltage with a high-speed op
amp. There is no problem with gain peaking based due to
phase shifts in the op amp. A circuit with a frequency bandwidth higher than 100 MHz can be attained by selecting the
correct op amp. Points for caution in the components, pattern
and structure are the same as those listed for the “High-speed
photodetector circuit (1)”.
Si Photodiodes
44
Figure 15
High-speed photodetector circuit (2)
10 k
PD
0.1 μ + 10 μ
RL
AC photodetector circuit (2)
+15 V
10 μ
10 k
0.1 μ
3 +7 6
51 Ω
IC
A
2 - 4 0.1 μ
Isc
Figure 17
+5 V
R
+
+ 10
1k
Vo
0.1 μ
0.1 μ
PD
Vo
1000 p
ISC
Rf
RL
-5 V
: High-speed PIN photodiode
(S5971, S5972, S5973, S9055, S9055-01, etc.)
R L, R, Rf : Determined by recommended conditions of the op amp
IC
: AD8001, etc.
FET
1M
RS
0.1μ
PD
PD :
RL :
Rs :
FET:
Rf
) [V]
R
Vo = Isc × R L × (1 +
KPDC0034EA
KPDC0015EE
AC photodetector circuit (1)
The AC photodetector circuit in Figure 16 uses load resistance
R L to convert the photocurrent from a low-capacitance Si PIN
photodiode (with a reverse voltage applied) to a voltage, and
amplifies the voltage with a high-speed op amp. There is no
problem with gain peaking based due to phase shifts in the
op amp. A circuit with a frequency bandwidth higher than 100
MHz can be attained by selecting the correct op amp.
Points for caution in the components, pattern and structure are
the same as those listed for the “High-speed photodetector
circuit (1)”.
Figure 16
AC photodetector circuit (1)
10 k
PD
0.1 μ + 10 μ
Isc
RL
C
r
+5 V
0.1 μ
3 +7 6
51 Ω
IC
A
2 - 4 0.1μ
R
Vo
Rf
-5 V
PD
: High-speed PIN photodiode
(S5971, S5972, S5973, S9055, S9055-01, etc.)
R L, R, Rf, r : Determined by recommended conditions of the op amp
IC
: AD8001, etc.
Vo = Isc × R L × (1 + Rf ) [V]
R
KPDC0034EA
AC photodetector circuit (2)
This AC photodetector circuit utilizes a low capacitance PIN
photodiode (with a reverse voltage applied) and a FET serving
as a voltage amplifier. Using a low-noise FET allows producing
a small yet inexpensive low-noise circuit, which can be used
in light sensors for FSO (free space optics) and optical remote
controls, etc. In Figure 17 the signal output is taken from the
FET drain. However, for interface to a next stage circuit having
low input resistance, the signal output can also be taken from
the source or a voltage-follower should be added.
45
Si Photodiodes
High-speed PIN photodiode (S2506-02, S5971, S5972, S5973, etc.)
Determined by sensitivity and “time constant of Ct” of photodiode
Determined by operation point of FET
2SK362, etc.
Copies of the full warranty can be obtained prior to the purchase of products by contacting your local Hamamatsu sales office.
Hamamatsu makes no other warranties, and any and all implied warranties of merchantability, or fitness for a particular purpose,
are hereby disclaimed. The customer is responsible for use of the product in accordance with Hamamatsu's instructions and
within the operating specifications and ratings listed in this catalogue. Hamamatsu shall not be responsible for the customer's
improper selection of a product for a particular application or otherwise. No warranty will apply if the products are in any way
altered or modified after delivery by Hamamatsu or for any intentional misuse or abuse of the products. Proper design safety
rules should be followed when incorporating these products into devices that could potentially cause bodily injury.
Hamamatsu's liability on any claim for loss or damage arising out of the supplying of any products, whether based on contract,
warranty, tort (including negligence and for property damage or death and bodily injury) or other grounds, shall not in any event
exceed the price allocable to such products or a part thereof involved in the claim, regardless of cause or fault. In no event shall
Hamamatsu be responsible to the customer or any third party for any consequential, incidental or indirect damages, including
but not limited to loss of profits, revenues, sales, data, business, goodwill or use, even if the company has been advised of the
possibility of such loss or damage. The limitation of liability set forth herein applies both to products and services purchased or
otherwise provided hereunder. This warranty is limited to repair or replacement, at the sole option of Hamamatsu, of any product
which is defective in workmanship or materials used in manufacture. All warranty claims must be made within 1 year from the
date of purchase or provision of the products or services.
Products that are amenable to repair shall be done so either under warranty or pursuant to a separate repair agreement. Some
products cannot be repaired either because of the nature or age of the product, the unavailability of spare parts, or the extent of
the damage is too great. Please contact your local Hamamatsu office for more details.
The products described in this catalogue should be used by persons who are accustomed to the properties of photoelectronics
devices, and have expertise in handling and operating them. They should not be used by persons who are not experienced or
trained in the necessary precautions surrounding their use.
The information in this catalogue is subject to change without prior notice.
Information furnished by Hamamatsu is believed to be reliable. However, no responsibility is assumed for possible inaccuracies
or omissions. Before using these products, always contact us for the delivery specification sheet to check the latest specifications.
No patent rights are granted to any of the circuits described herein.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
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D-82211 Herrsching am Ammersee, Germany
Telephone: (49)8152-375-0, Fax: (49)8152-265-8
E-mail: [email protected]
North Europe and CIS:
HAMAMATSU PHOTONICS NORDEN AB
Main Office
Torshamnsgatan 35 16440 Kista, Sweden
Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
E-mail: [email protected]
Russian Office:
11, Chistoprudny Boulevard, Building 1,
101000, Moscow, Russia
Telephone: (7) 495 258 85 18, Fax: (7) 495 258 85 19
E-mail: [email protected]
Italy:
HAMAMATSU PHOTONICS ITALIA S.r.l.
Main office:
Strada della Moia, 1 int. 6
20020 Arese (Milano), Italy
Telephone: (39)02-93581733
Fax: (39)02-93581741
E-mail: [email protected]
Rome Office:
Viale Cesare Pavese, 435
00144 Roma, Italy
Telephone: (39)06-50513454, Fax: (39)06-50513460
E-mail: [email protected]
Taiwan:
HAKUTO TAIWAN LTD.
6F, No.308, Pa teh Road, Sec, 2,
Taipei, Taiwan R.O.C.
Telephone: (886)2-8772-8910
Fax: (886)2-8772-8918
KORYO ELECTRONICS CO., LTD.
9F-7, No.79, Hsin Tai Wu Road
Sec.1, Hsi-Chih, Taipei, Taiwan, R.O.C.
Telephone: (886)2-2698-1143, Fax: (886)2-2698-1147
Republic of Korea:
SANGKI CORPORATION
Suite 431, World Vision BLDG.
24-2 Yoido-Dong
Youngdeungpo-Ku
Seoul, 150-877
Telephone: (82)2-780-8515
Fax: (82)2-784-6062
Singapore:
HAKUTO SINGAPORE PTE LTD.
Block 2, Kaki Bukit Avenue 1, #04-01 to #04-04
Kaki Bukit Industrial Estate, Singapore 417938
Telephone: (65)67458910, Fax: (65)67418200
© 2014 Hamamatsu Photonics K.K.
Quality, technology, and service
are part of every product.
Cat. No. KSPD0001E09
Apr. 2014 DN
Printed in Japan (3,000)