PHOTODIODE Si PIN photodiode S8650 Flat surface ideal for bonding to scintillator S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between. We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us. Features Applications l Flat epoxy coating surface ideal for bonding to scintillator l Scintillation X-ray detectors Flatness: ±5 µm l Calorimeters, etc. l Active area: 10 × 10 mm (Other sizes are also available on request.) ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 100 -20 to +60 -20 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Symbol λ λp Photo sensitivity S Dark current ID Cut-off frequency fc Terminal capacitance Noise equivalent power Ct NEP Condition λ=λp BGO: λ=480 nm CsI (Tl): λ=540 nm VR=70 V λ=780 nm, VR=70 V RL=50 Ω, -3 dB VR=70 V, f=1 MHz VR=70 V, λ=λp Min. - Typ. 320 to 1100 960 0.66 0.30 0.37 2 Max. 6 Unit nm nm A/W A/W A/W nA - 40 - MHz - 40 3.8 × 10-14 - pF W/Hz1/2 1 Si PIN photodiode ■ Spectral response S8650 ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.7 (Typ. Ta=25 ˚C) 100 nA 0.5 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 0.4 0.3 0.2 10 nA 1 nA 0.1 0 200 400 600 800 1000 1200 100 pA 0.1 1 WAVELENGTH (nm) 10 100 1000 REVERSE VOLTAGE (V) KPINB0254EA ■ Terminal capacitance vs. reverse voltage KPINB00255EA ■ Dimensional outline (unit: mm) +0 14.5 -0.5 (Typ. Ta=25 ˚C, f=1 MHz) 10 nF +0 10.0 1 nF 12.7 - 0.5 10.0 ACTIVE AREA 1.78 PHOTOSENSITIVE SURFACE 100 pF WHITE CERAMIC 10 pF 0.1 1 10 100 1000 10 0.7 TERMINAL CAPACITANCE (1.4) 0.45 LEAD 5.0 REVERSE VOLTAGE (V) KPINB00256EA Epoxy resin flatness: ±5 µm Tolerance unless otherwise noted: ±0.2 1.25 KPINA0088EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1061E02 Aug. 2006 DN