HAMAMATSU S4707-01

PHOTODIODE
Si PIN photodiode
S4707-01
Si PIN photodiode for general photometry
Features
Applications
l Clear plastic package: 4.5 × 5.5 mm
l 4-pin DIP type
l Active area: 2.4 × 2.8 mm
l Optical switch, etc.
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Value
20
-25 to +85
-40 to +100
Unit
V
°C
°C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Symbol
λ
λp
S
Isc
ID
Cut-off frequency
fc
Terminal capacitance
Ct
Condition
λ=λp
100 lx, 2856 K
VR=10 V
VR=10 V, RL=50 Ω
-3 dB, λ=780 nm
VR=10 V, f=1 MHz
Min.
0.5
-
Typ.
320 to 1100
960
0.6
6.6
0.08
Max.
5
Unit
nm
nm
A/W
µA
nA
-
20
-
MHz
-
14
30
pF
1
Si PIN photodiode
■ Spectral response
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
0.7
(Typ. Ta=25 ˚C)
1 nA
QE=100 %
0.5
DARK CURRENT
PHOTO SENSITIVITY (A/W)
0.6
S4707-01
0.4
0.3
100 pA
0.2
0.1
400
600
800
1000
10 pA
0.01
1200
0.1
1
10
100
REVERSE VOLTAGE (V)
WAVELENGTH (nm)
KPINB0299EA
(Typ. Ta=25 ˚C)
1
10
100
REVERSE VOLTAGE (V)
KPINB0301EA
(4 ×) 4.5 ± 0.4
1 pF
0.1
5.75 ± 0.2
(2 ×) 5˚
(2 ×) 3˚
(4 ×) 7.5 ± 5˚
0.7
1.0
2.0
PHOTOSENSITIVE
SURFACE
(4 ×) 0.2
5
(2 ×) 3˚
4.5 *
10 pF
5.4 *
(2 ×) 10˚
100 pF
2.54
4.6 ± 0.2
(INCLUDING BURR)
5.6 ± 0.2
(INCLUDING BURR)
1 nF
TERMINAL CAPACITANCE
■ Dimensional outline (unit: mm)
(4 ×) 0.7
(4 ×) 0.5
■ Terminal capacitance vs. reverse voltage
KPINB0300EA
5.5 *
0
200
NC
CATHODE
ANODE
CATHODE
Tolerance unless otherwise
noted: ±0.1, ±2˚
Shaded area indicates burr.
Chip position accuracy with respect to
the package dimensions marked *
X, Y≤±0.2, θ≤±2˚
KPINA0099EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Cat. No. KPIN1070E01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
May 2004 DN
2