HAMAMATSU S3994

PHOTODIODE
Si PIN photodiode
S3994-01
Si PIN photodiode for optical power meters
S3994-01 is a Si PIN photodiode designed for optical power meters. Compared to the previous type (S3994), S3994-01 has an
improved anti-reflection film. The flat glass used as the light input window is less susceptible to scratches than resin windows,
allowing easy handling.
Features
Applications
l Thin package (1.4 mm Max.)
l High sensitivity: 0.28 A/W Typ. (λ=410 nm)
l Large active area: 10 × 10 mm
l Optical power meter
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Value
50
-20 to +60
-20 to +80
Unit
V
°C
°C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
Symbol
λ
λp
S
ID
Ct
fc
Condition
λ=410 nm
VR=30 V
VR=30 V, f=1 MHz
VR=30 V, RL=50 Ω
-3 dB
Min.
0.24
-
Typ.
320 to 1100
960
0.28
3
40
Max.
10
-
Unit
nm
µm
A/W
nA
pF
-
20
-
MHz
1
Si PIN photodiode
S3994-01
■ Dark current vs. reverse voltage
■ Spectral response
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100 nA
0.7
0.5
DARK CURRENT
PHOTO SENSITIVITY (A/W)
0.6
0.4
0.3
0.2
10 nA
1 nA
0.1
0
200
400
600
800
1000
100 pA
0.01
1200
WAVELENGTH (nm)
1
0.1
10
100
REVERSE VOLTAGE (V)
KPINB0198EA
■ Terminal capacitance vs. reverse voltage
KPINB0199EA
■ Dimensional outline (unit: mm)
15.0 ± 0.5
(Typ. Ta=25 ˚C)
1 nF
GLASS
10.5
100 pF
10.0
(4.0)
SOLDERING
ACTIVE AREA
10 pF
0.1
1
10
100
1.4 MAX.
GLASS
RED
(6.0)
10.0
GLASS
11.0
11.6 ± 0.2
TERMINAL CAPACITANCE
1.0
WHITE
0.7
LEAD
PHOTOSENSITIVE
SURFACE
RESIN
CERAMIC
KPINA0078EA
REVERSE VOLTAGE (V)
KPINB0200EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1057E02
Jul. 2010 DN