PHOTODIODE Si PIN photodiode S3994-01 Si PIN photodiode for optical power meters S3994-01 is a Si PIN photodiode designed for optical power meters. Compared to the previous type (S3994), S3994-01 has an improved anti-reflection film. The flat glass used as the light input window is less susceptible to scratches than resin windows, allowing easy handling. Features Applications l Thin package (1.4 mm Max.) l High sensitivity: 0.28 A/W Typ. (λ=410 nm) l Large active area: 10 × 10 mm l Optical power meter ■ Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 50 -20 to +60 -20 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Terminal capacitance Cut-off frequency Symbol λ λp S ID Ct fc Condition λ=410 nm VR=30 V VR=30 V, f=1 MHz VR=30 V, RL=50 Ω -3 dB Min. 0.24 - Typ. 320 to 1100 960 0.28 3 40 Max. 10 - Unit nm µm A/W nA pF - 20 - MHz 1 Si PIN photodiode S3994-01 ■ Dark current vs. reverse voltage ■ Spectral response (Typ. Ta=25 ˚C) (Typ. Ta=25 ˚C) 100 nA 0.7 0.5 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.6 0.4 0.3 0.2 10 nA 1 nA 0.1 0 200 400 600 800 1000 100 pA 0.01 1200 WAVELENGTH (nm) 1 0.1 10 100 REVERSE VOLTAGE (V) KPINB0198EA ■ Terminal capacitance vs. reverse voltage KPINB0199EA ■ Dimensional outline (unit: mm) 15.0 ± 0.5 (Typ. Ta=25 ˚C) 1 nF GLASS 10.5 100 pF 10.0 (4.0) SOLDERING ACTIVE AREA 10 pF 0.1 1 10 100 1.4 MAX. GLASS RED (6.0) 10.0 GLASS 11.0 11.6 ± 0.2 TERMINAL CAPACITANCE 1.0 WHITE 0.7 LEAD PHOTOSENSITIVE SURFACE RESIN CERAMIC KPINA0078EA REVERSE VOLTAGE (V) KPINB0200EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1057E02 Jul. 2010 DN