Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85ºC. All devices are 100% RF & DC tested. Pin 1 (Source) Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) Description Agilent Technologies’s ATF501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a mediumpower amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz. Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) • Excellent uniformity in product specifications • Small package size: 2.0 x 2.0 x 0.75 mm3 • Point MTTF > 300 years[2] • MSL-1 and lead-free • Tape-and-Reel packaging option available Bottom View Specifications • 2 GHz; 4.5V, 280 mA (Typ.) Pin 2 (Gate) Pin 3 Pin 8 0Px Pin 4 (Source) Pin 7 (Drain) Pin 6 Pin 5 Top View Note: Package marking provides orientation and identification: “0P” = Device Code “x” = Date code indicates the month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control. • 45.5 dBm Output IP3 • 29 dBm Output Power at 1dB gain compression • 1 dB Noise Figure • 15 dB Gain • 14.5 dB LFOM[4] • 65% PAE • 23oC/W thermal resistance Applications • Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver Amplifier for WLAN, WLL/ RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications ATF-501P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain–Source Voltage[2] V 7 VGS Gate–Source Voltage[2] V -5 to 0.8 VGD Gate Drain Voltage[2] V -5 to 1 IDS Drain Current[2] A 1 IGS Gate Current mA 12 Pdiss Total Power Dissipation[3] W 3.5 Pin max. RF Input Power dBm 30 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 θch_b Thermal Resistance[4] °C/W 23 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25°C. Derate 43.5 mW/°C for TB > 69.5°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6] Vgs=0.7V 700 100 600 Cpk=1.76 Stdev=0.3 –3 Std 60 400 300 Vgs=0.55V 200 Vgs=0.5V 100 0 1 2 3 4 5 6 60 40 20 20 0 27.5 28 28.5 29 29.5 30.5 30 Figure 3. PAE. 100 Cpk=1.1 Stdev=0.87 Cpk=1.61 Stdev=0.33 80 80 60 60 –3 Std +3 Std 40 40 20 20 14 15 16 17 0 42 43 44 +3 Std 45 46 47 48 49 50 OIP3 (dBm) GAIN (dB) Figure 4. Gain. 55 +3 Std 65 PAE (%) Figure 2. P1dB. 100 –3 Std 0 45 –3 Std P1dB (dBm) Figure 1. Typical IV curve (Vgs = 0.01V) per step. 0 13 +3 Std 40 Vds (V) Figure 5. OIP3. Notes: 5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 2 Cpk=1.51 Stdev=3.38 80 80 Vgs=0.6V 0 100 Vgs=0.65V 500 Ids (mA) 120 120 800 75 85 ATF-501P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.42 0.55 0.67 Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V — 0.33 — Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA — 5 — Gm Transconductance Vds = 4.5V, Gm = ∆Ids/∆Vgs; ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V mmho — 1872 — Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -30 -0.8 — NF Noise Figure [1] f = 2 GHz f = 900 MHz dB dB — — 1 — — — G Gain[1] f = 2 GHz f = 900 MHz dB dB 13.5 — 15 16.6 16.5 — OIP3 Output 3rd Order Intercept Point [1,2] f = 2 GHz f = 900 MHz dBm dBm 43 — 45.5 42 — — P1dB Output 1dB Compressed [1] f = 2 GHz f = 900 MHz dBm dBm 27.5 — 29 27.3 — — PAE Power Added Efficiency[1] f = 2 GHz f = 900 MHz % % 50 — 65 49 — — ACLR Adjacent Channel Leakage Power Ratio [1,3] Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc — — 63.9 64.1 — — Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded. See absolute max ratings and application note for more details. Input 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Input Matching Circuit Γ_mag=0.79 Γ_ang=-164° (1.1 dB loss) DUT Output Matching Circuit Γ_mag=0.69 Γ_ang=-163° (0.9 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 3.3 nH 1.8 nH 50 Ohm .02 1.2 pF 110 Ohm .03 110 Ohm .03 50 Ohm .02 1.2 pF DUT RF Input RF Output 15 nH 47 nH 2.2 µF 15 Ohm 2.2 µF Gate Supply Drain Supply Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V 280 mA and 4.5V 400 mA quiesent bias respectively: Typical Gammas at Optimum OIP3 at 4.5V 280 mA Freq (GHz) Optimized for maximum OIP3 at 4.5V 280 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 46.42 16.03 26.67 45.80 0.305 < -140 0.577 < 162 2.0 45.50 15.07 28.93 50.30 0.806 < -179.2 0.511 < 164 2.4 44.83 12.97 29.03 45.70 0.756 < -167 0.589 < -168 3.9 43.97 6.11 27.33 33.90 0.782 < -162 0.524 < -153 Typical Gammas at Optimum P1dB at 4.5V 280mA Freq (GHz) Optimized for maximum P1dB at 4.5V 280 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 39.29 20.90 30.49 41.00 0.859 < 165 0.757 < 179 2.0 41.79 14.72 30.60 45.30 0.76 < -171 0.691 < -168 2.4 42.37 11.25 30.24 39.70 0.745 < -166 0.694 < -161 3.9 42.00 5.63 28.26 25.80 0.759 < -159 0.708 < -149 Typical Gammas at Optimum OIP3 at 4.5V 400 mA Freq (GHz) Optimized for maximum OIP3 at 4.5V 400 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 49.15 16.85 27.86 44.20 0.5852 < -135.80 0.4785 < 177.00 2.0 48.18 14.72 29.36 48.89 0.7267 < -175.37 0.7338 < 179.56 2.4 47.54 12.47 29.10 46.83 0.6155 < -171.71 0.5411 < -172.02 3.9 45.44 8.05 28.49 37.02 0.7888 < -148.43 0.5247 < -145.84 Gamma Load Typical Gammas at Optimum P1dB at 4.5V 400 mA Freq (GHz) Optimized for maximum P1dB at 4.5V 400 mA OIP3 Gain P1dB PAE Gamma Source 0.9 41.78 21.84 31.23 49.97 0.7765 < 168.50 0.7589 < -175.09 2.0 43.28 14.83 31.03 44.78 0.8172 < -175.74 0.8011 < -165.75 2.4 42.46 11.90 30.66 41.00 0.8149 < -163.78 0.8042 < -161.79 3.9 42.94 7.70 29.56 33.06 0.8394 < -151.21 0.7826 < -149.00 4 ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 280 mA 55 55 4.5V 5.5V 3.5V 50 35 4.5V 5.5V 3.5V 50 45 40 P1dB (dBm) OIP3 (dBm) OIP3 (dBm) 30 45 40 35 35 30 30 20 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz. Figure 10. P1dB vs. Idq and Vds at 2 GHz. 25 35 4.5V 5.5V 3.5V 15 200 240 280 320 360 400 440 480 520 560 600 640 Figure 8. OIP3 vs. Idq and Vds at 2 GHz. 25 25 4.5V 5.5V 3.5V 20 4.5V 5.5V 3.5V 20 25 20 4.5V 5.5V 3.5V 15 10 15 10 5 5 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) Idq (mA) Figure 12. Gain vs. Idq and Vds at 2 GHz. 60 60 50 50 40 40 PAE (%) PAE (%) 15 200 240 280 320 360 400 440 480 520 560 600 640 Figure 11. P1dB vs. Idq and Vds at 0.9 GHz. 30 20 4.5V 5.5V 3.5V 30 20 10 10 0 0 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) Figure 14. PAE vs. Idq and Vds at 2 GHz. 5 GAIN (dB) GAIN (dB) P1dB (dBm) 30 Figure 15. PAE vs. Idq and Vds at 0.9 GHz. Figure 13. Gain vs. Idq and Vds at 0.9 GHz. ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V 280 mA 55 40 30 P1dB (dBm) 45 4.5V 5.5V 3.5V 50 OIP3 (dBm) 50 OIP3 (dBm) 35 55 4.5V 5.5V 3.5V 45 40 25 4.5V 5.5V 3.5V 20 35 35 30 30 15 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) Figure 16. OIP3 vs. Idq and Vds at 2 GHz. 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 18. P1dB vs. Idq and Vds at 2 GHz. Figure 17. OIP3 vs. Idq and Vds at 0.9 GHz. 25 35 25 4.5V 5.5V 3.5V 20 20 4.5V 5.5V 3.5V 20 15 10 0 0 Idq (mA) 60 50 50 40 40 20 30 4.5V 5.5V 3.5V 20 10 10 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) Figure 22. PAE vs. Idq and Vds at 2 GHz. 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 20. Gain vs. Idq and Vds at 2 GHz. 60 4.5V 5.5V 3.5V 10 5 Idq (mA) 30 15 5 200 240 280 320 360 400 440 480 520 560 600 640 PAE (%) PAE (%) 15 200 240 280 320 360 400 440 480 520 560 600 640 Figure 19. P1dB vs. Idq and Vds at 0.9 GHz. 6 GAIN (dB) 25 GAIN (dB) P1dB (dBm) 30 Figure 23. PAE vs. Idq and Vds at 0.9 GHz. Figure 21. Gain vs. Idq and Vds at 0.9 GHz. 50 40 40 30 20 30 30 20 -40°C 25°C 85°C 10 35 P1dB (dBm) 50 OIP3 (dBm) -40°C 25°C 85°C 10 0.5 1 1.5 2 2.5 3 3.5 0.5 4 1 1.5 2 2.5 3 3.5 0.5 4 1 30 15 GAIN (dB) 20 25 -40°C 25°C 85°C 20 2 2.5 3 3.5 4 Figure 26. P1dB vs. Temperature and Frequency at Optimal OIP3. Figure 25. OIP3 vs. Temperature and Frequency at Optimal P1dB. 35 1.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 24. OIP3 vs. Temperature and Frequency at Optimal OIP3. P1dB (dBm) -40°C 25°C 85°C 15 0 0 25 20 25 20 GAIN (dB) OIP3 (dBm) ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimum OIP3 at 4.5V 280 mA 10 -40°C 25°C 85°C 15 -40°C 25°C 85°C 10 5 5 15 0.5 0 1 1.5 2 2.5 3 3.5 4 0.5 0 1 FREQUENCY (GHz) 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 27. P1dB vs. Temperature and Frequency at Optimal P1dB. 80 PAE (%) PAE (%) 40 30 -40°C 25°C 85°C 20 0 0 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 30. PAE vs. Temperature and Frequency at Optimal OIP3. 7 -40°C 25°C 85°C 20 10 0.5 60 40 3.5 4 0.5 1 1.5 2 2.5 1.5 2 2.5 3 3.5 Figure 29. Gain vs. Temperature and Frequency at Optimal P1dB. 100 50 1 FREQUENCY (GHz) Figure 28. Gain vs. Temperature and Frequency at Optimal OIP3. 60 0.5 3 FREQUENCY (GHz) Figure 31. PAE vs. Temperature and Frequency at Optimal P1dB. 3.5 4 4 ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA 55 4.5V 5.5V 3.5V 50 45 40 40 35 30 30 25 4.5V 5.5V 3.5V 4.5V 5.5V 3.5V 20 15 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 33. OIP3 vs. Ids and Vds at 900 MHz. GAIN 30 25 Figure 34. P1dB vs. Ids and Vds at 2 GHz. 25 25 20 20 15 15 GAIN 35 10 4.5V 5.5V 3.5V 20 5 15 5 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 36. Gain vs. Ids and Vds at 2 GHz. 60 50 50 40 40 PAE (%) 60 30 10 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Figure 35. P1dB vs. Ids and Vds at 900 MHz. 20 10 4.5V 5.5V 3.5V 50 40 30 20 4.5V 5.5V 3.5V 10 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 20 -40°C 25°C 85°C 0 200 240 280 320 360 400 440 480 520 560 600 640 Figure 38. PAE vs. Ids and Vds at 2 GHz. 30 10 0 0 Figure 37. Gain vs. Ids and Vds at 900 MHz. OIP3 (dBm) P1dB (dBm) 45 35 Figure 32. OIP3 vs. Ids and Vds at 2 GHz. PAE (%) P1dB (dBm) 30 OIP3 (dBm) OIP3 (dBm) 50 8 35 55 Figure 39. PAE vs. Ids and Vds at 900 MHz. 0.5 1 1.5 2 2.5 3 3.5 FREQUENCY (GHz) Figure 40. OIP3 vs. Temperature and Frequency at optimum OIP3. 4 ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA 50 35 35 30 30 30 20 -40°C 25°C 85°C P1dB (dBm) P1dB (dBm) OIP3 (dBm) 40 25 -40°C 25°C 85°C 20 25 20 10 0 0.5 1 1.5 2 2.5 3 3.5 15 0.5 4 1 FREQUENCY (GHz) 2.5 3 3.5 15 0.5 4 10 -40°C 25°C 85°C 25 100 20 80 15 60 10 1.5 2 2.5 3 3.5 0 0.5 4 FREQUENCY (GHz) 2.5 3 3.5 0 0.5 4 60 20 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 47. PAE vs. Temperature and Frequency at optimum P1dB. Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 3 3.5 4 -40°C 25°C 85°C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 46. PAE vs. Temperature and Frequency at optimum OIP3. 55 4.5V 5.5V 3.5V 45 40 45 40 35 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 48. OIP3 vs. Ids and Vds at 2 GHz. 4.5V 5.5V 3.5V 50 OIP3 (dBm) OIP3 (dBm) PAE (%) 2 50 40 9 1.5 55 -40°C 25°C 85°C 80 0 0.5 1 Figure 45. Gain vs. Temperature and Frequency at optimum P1dB. 100 2.5 20 FREQUENCY (GHz) Figure 44. Gain vs. Temperature and Frequency at optimum OIP3. 2 40 -40°C 25°C 85°C 5 1 1.5 Figure 43. P1dB vs. Temperature and Frequency at optimum P1dB. PAE (%) GAIN (dB) 15 0 0.5 1 FREQUENCY (GHz) Figure 42. P1dB vs. Temperature and Frequency at optimum OIP3. 20 GAIN (dB) 2 FREQUENCY (GHz) Figure 41. OIP3 vs. Temperature and Frequency at optimum P1dB. 5 1.5 -40°C 25°C 85°C 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 49. OIP3 vs. Ids and Vds at 900 MHz. 35 30 30 25 4.5V 5.5V 3.5V 25 20 GAIN 35 P1dB (dBm) P1dB (dBm) ATF-501P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V 400 mA 25 4.5V 5.5V 3.5V 15 10 20 20 4.5V 5.5V 3.5V 5 15 15 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 50. P1dB vs. Ids and Vds at 2 GHz. Figure 51. P1dB vs. Ids and Vds at 900 MHz. 30 Figure 52. Gain vs. Ids and Vds at 2 GHz. 80 60 50 25 60 15 4.5V 5.5V 3.5V 10 5 30 20 10 4.5V 5.5V 3.5V 40 20 4.5V 5.5V 3.5V 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 53. Gain vs. Ids and Vds at 900 MHz. Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 10 PAE (%) 20 PAE (%) GAIN 40 Figure 54. PAE vs. Ids and Vds at 2 GHz. Figure 55. PAE vs. Ids and Vds at 900 MHz. ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.915 0.911 0.910 0.910 0.908 0.907 0.908 0.905 0.909 0.909 0.902 0.902 0.901 0.901 0.898 0.902 0.893 0.899 0.895 0.898 0.886 0.868 0.862 0.847 0.844 0.837 0.824 0.821 0.805 31.6 26.2 22.8 20.3 18.7 17.1 15.8 14.7 13.6 12.7 9.1 7.1 6.6 5.0 3.0 0.9 -0.9 -3.3 -4.4 -5.3 -5.9 -6.6 -8.0 -7.9 -8.5 -9.0 -9.7 -9.8 -10.5 37.990 20.324 13.783 10.342 8.604 7.194 6.167 5.407 4.799 4.308 2.859 2.264 2.134 1.772 1.412 1.110 0.902 0.687 0.604 0.542 0.505 0.469 0.398 0.403 0.377 0.354 0.327 0.323 0.298 112.2 99.9 94.5 91.1 88.4 86.1 84.1 82.1 80.3 78.3 70.3 64.4 63.1 57.7 49.3 37.6 22.6 9.0 -1.1 -13.0 -20.2 -29.7 -40.8 -47.5 -58.4 -67.2 -72.0 -82.7 -90.1 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.5 -30.2 -28.9 -27.3 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.6 -17.4 -16.0 -15.3 -14.6 -14.2 -13.4 -12.5 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.030 0.031 0.036 0.043 0.058 0.072 0.078 0.091 0.105 0.114 0.132 0.135 0.159 0.171 0.187 0.194 0.215 0.237 29.3 24.0 24.5 27.3 29.6 32.4 34.4 36.3 38.3 39.9 45.0 46.9 47.2 47.4 46.5 43.5 35.6 27.3 22.0 12.3 9.7 0.5 -6.3 -12.3 -21.3 -30.1 -36.8 -44.6 -51.8 0.647 0.689 0.699 0.702 0.691 0.691 0.694 0.695 0.692 0.692 0.698 0.700 0.699 0.697 0.707 0.699 0.697 0.652 0.646 0.641 0.695 0.742 0.735 0.766 0.800 0.797 0.763 0.786 0.781 35.0 31.9 29.9 28.7 27.6 26.5 25.6 24.8 24.0 23.3 18.2 16.0 15.4 13.8 11.7 9.7 7.8 5.7 4.2 3.2 2.5 1.6 -0.1 -0.1 -0.3 -1.1 -2.3 -2.4 -3.5 -132.3 -156.2 -165.4 -170.9 -173.4 -176.1 -178.5 179.8 178.2 176.6 170.5 166.0 165.0 161.1 155.0 145.0 134.9 125.8 115.6 105.5 95.5 84.7 74.0 64.5 55.6 47.4 39.9 31.6 24.6 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 56. MSG/MAG & |S21|2 vs. Frequency at 4.5V 280mA. 11 -160.6 -171.1 -175.7 -178.5 -179.9 178.5 177.2 175.2 175.1 173.9 169.4 165.6 163.0 159.1 153.7 146.8 145.3 134.1 117.4 115.5 104.5 91.3 88.1 78.4 68.9 65.6 51.5 38.9 29.5 0.173 0.314 0.436 0.569 0.648 0.736 0.800 0.871 0.906 0.953 1.128 1.209 1.241 1.278 1.326 1.272 1.286 1.394 1.463 1.447 1.455 1.431 1.661 1.491 1.397 1.414 1.608 1.488 1.575 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.922 0.914 0.914 0.911 0.911 0.912 0.910 0.910 0.913 0.910 0.904 0.905 0.905 0.906 0.905 0.904 0.899 0.905 0.902 0.900 0.894 0.882 0.873 0.856 0.853 0.837 0.829 0.828 0.807 31.1 25.7 22.3 19.8 18.3 16.7 15.4 14.2 13.2 12.2 8.7 6.7 6.1 4.5 2.6 0.4 -1.3 -3.6 -4.6 -5.6 -6.1 -7.0 -8.1 -8.1 -8.4 -8.8 -9.2 -9.5 -10.2 35.978 19.290 13.088 9.814 8.176 6.834 5.861 5.141 4.558 4.092 2.718 2.153 2.027 1.684 1.354 1.053 0.863 0.661 0.587 0.527 0.498 0.448 0.393 0.393 0.380 0.361 0.345 0.336 0.310 112.6 100.1 94.7 91.4 88.6 86.4 84.3 82.3 80.5 78.7 70.5 64.9 63.7 58.3 50.3 38.5 23.9 10.5 0.3 -11.1 -17.7 -26.8 -38.8 -45.4 -55.0 -64.1 -72.0 -80.5 -88.2 -37.7 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.4 -34.0 -33.6 -31.4 -30.2 -29.9 -28.6 -27.1 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.7 -17.5 -16.1 -15.6 -14.8 -14.4 -13.4 -12.5 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.027 0.031 0.032 0.037 0.044 0.058 0.072 0.078 0.091 0.105 0.114 0.130 0.133 0.156 0.166 0.182 0.190 0.213 0.236 28.9 22.4 22.5 24.9 26.8 29.3 31.3 33.0 34.9 36.6 41.7 44.2 44.5 44.9 44.3 41.6 34.1 26.0 20.8 11.1 8.4 -0.9 -7.5 -13.1 -21.4 -29.6 -35.9 -43.3 -50.5 0.664 0.709 0.719 0.722 0.713 0.713 0.716 0.718 0.712 0.714 0.721 0.721 0.719 0.715 0.725 0.716 0.712 0.660 0.654 0.649 0.700 0.746 0.738 0.768 0.800 0.799 0.763 0.787 0.782 34.4 31.1 29.4 27.9 26.8 25.8 24.9 24.3 23.6 22.9 18.3 16.0 15.4 13.7 11.8 9.5 7.7 5.6 4.2 3.0 2.6 1.6 0.1 -0.1 -0.2 -1.0 -1.8 -2.0 -3.2 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.3 179.9 178.4 176.8 170.5 166.1 165.2 161.1 154.9 145.1 134.9 126.0 115.8 106.4 95.9 84.9 74.3 64.6 56.0 47.4 40.6 32.7 26.1 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 57. MSG/MAG & |S21|2 vs. Frequency at 4.5V 200mA. 12 -159.8 -170.7 -175.4 -178.4 -179.9 178.6 177.2 175.5 175.0 173.8 169.0 165.2 162.5 158.5 152.9 145.7 144.1 132.9 116.3 114.4 103.4 90.5 87.3 77.8 68.4 65.2 51.1 38.5 29.1 0.142 0.274 0.390 0.510 0.577 0.653 0.725 0.801 0.840 0.903 1.077 1.161 1.188 1.227 1.262 1.271 1.263 1.371 1.423 1.451 1.412 1.407 1.614 1.492 1.399 1.439 1.556 1.449 1.542 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.911 0.910 0.911 0.913 0.907 0.910 0.910 0.906 0.913 0.907 0.904 0.906 0.904 0.907 0.906 0.903 0.896 0.903 0.903 0.891 0.885 0.873 0.866 0.849 0.849 0.841 0.828 0.817 0.809 31.6 26.2 22.8 20.3 18.7 17.2 15.8 14.7 13.7 12.7 9.2 7.1 6.6 5.0 3.1 0.9 -0.8 -3.2 -4.3 -5.3 -6.0 -6.7 -7.9 -7.8 -8.4 -9.0 -9.4 -9.8 -10.3 38.110 20.415 13.848 10.397 8.640 7.232 6.200 5.431 4.826 4.328 2.878 2.275 2.146 1.783 1.424 1.114 0.907 0.691 0.612 0.544 0.504 0.465 0.403 0.406 0.379 0.353 0.337 0.322 0.304 112.4 100.0 94.6 91.3 88.5 86.2 84.2 82.2 80.3 78.4 70.4 64.5 63.2 57.9 49.4 37.7 22.7 8.9 -1.0 -13.3 -20.0 -28.4 -41.1 -47.3 -57.9 -69.0 -73.1 -83.0 -92.7 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.9 -35.4 -34.9 -34.0 -32.0 -30.5 -30.2 -28.9 -27.3 -24.7 -22.7 -22.2 -20.7 -19.5 -18.8 -17.5 -17.3 -15.9 -15.2 -14.5 -14.2 -13.2 -12.4 0.011 0.012 0.013 0.013 0.015 0.016 0.016 0.017 0.018 0.020 0.025 0.030 0.031 0.036 0.043 0.058 0.073 0.078 0.092 0.106 0.115 0.133 0.137 0.161 0.174 0.189 0.196 0.218 0.240 30.3 24.9 26.2 28.9 31.8 34.5 36.8 38.8 40.6 42.3 47.0 48.7 49.0 49.0 47.7 44.2 36.2 27.9 22.4 12.8 10.2 0.9 -5.8 -12.1 -21.3 -30.3 -37.1 -45.1 -52.4 0.649 0.692 0.701 0.704 0.693 0.694 0.696 0.697 0.695 0.694 0.698 0.702 0.701 0.699 0.708 0.701 0.699 0.654 0.647 0.642 0.697 0.743 0.735 0.768 0.801 0.800 0.763 0.787 0.783 35.4 32.3 30.3 29.0 27.6 26.6 25.9 25.0 24.3 23.4 18.2 16.1 15.5 14.0 12.0 9.7 7.9 5.9 4.6 2.9 2.4 1.6 0.1 0.0 -0.2 -0.9 -2.0 -2.4 -3.2 -132.8 -156.5 -165.8 -171.1 -173.7 -176.3 -178.6 179.7 178.0 176.4 170.3 165.9 164.8 160.9 154.7 144.8 134.7 125.6 115.0 105.6 94.9 84.3 74.0 64.3 55.7 46.6 39.0 31.0 23.9 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 58. MSG/MAG & |S21|2 vs. Frequency at 4.5V 360mA. 13 -162.1 -171.8 -176.2 -178.9 179.7 178.2 176.9 175.6 174.8 173.7 169.4 165.5 162.8 159.0 153.6 146.7 145.1 134.0 117.3 115.4 104.4 91.3 87.9 78.3 68.8 65.5 51.4 38.7 29.3 0.200 0.340 0.472 0.600 0.679 0.747 0.838 0.914 0.930 0.984 1.154 1.193 1.231 1.246 1.275 1.268 1.256 1.355 1.375 1.495 1.462 1.416 1.607 1.464 1.361 1.376 1.547 1.491 1.513 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.923 0.922 0.920 0.920 0.915 0.917 0.917 0.915 0.918 0.913 0.913 0.913 0.910 0.913 0.906 0.910 0.903 0.907 0.903 0.897 0.889 0.880 0.870 0.847 0.839 0.816 0.808 0.794 0.769 30.6 25.2 21.8 19.3 17.7 16.2 14.8 13.6 12.7 11.7 8.1 6.1 5.6 4.0 2.1 0.1 -1.6 -3.9 -4.9 -5.6 -6.0 -6.4 -7.7 -7.5 -8.0 -8.2 -9.2 -9.0 -9.7 34.047 18.161 12.313 9.220 7.674 6.429 5.511 4.813 4.302 3.850 2.555 2.025 1.912 1.588 1.276 1.012 0.827 0.636 0.570 0.522 0.499 0.477 0.411 0.421 0.397 0.390 0.345 0.354 0.329 111.6 99.7 94.5 91.4 88.7 86.6 84.6 82.8 81.0 79.1 72.0 66.3 65.1 60.4 52.2 41.6 27.2 14.0 5.1 -7.0 -14.5 -23.6 -33.8 -41.1 -52.2 -63.9 -70.3 -81.5 -91.7 -38.4 -37.7 -37.1 -37.1 -35.9 -35.4 -34.9 -34.9 -34.4 -33.6 -31.4 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.3 -15.8 -15.0 -14.6 -13.5 -12.6 0.012 0.013 0.014 0.014 0.016 0.017 0.018 0.018 0.019 0.021 0.027 0.031 0.032 0.037 0.045 0.060 0.075 0.079 0.093 0.107 0.115 0.131 0.132 0.153 0.163 0.178 0.186 0.211 0.234 28.8 23.8 25.0 27.5 30.0 32.9 34.8 37.2 38.8 40.5 45.6 47.1 47.6 47.5 45.9 42.4 34.3 25.3 19.8 9.9 7.0 -2.4 -9.1 -14.5 -22.5 -30.0 -35.9 -43.3 -50.7 0.716 0.759 0.767 0.770 0.760 0.761 0.762 0.760 0.764 0.759 0.759 0.763 0.762 0.758 0.762 0.754 0.742 0.674 0.669 0.666 0.709 0.754 0.745 0.770 0.801 0.795 0.755 0.787 0.777 34.5 31.5 29.4 28.2 26.8 25.8 24.9 24.3 23.5 22.6 18.1 15.9 15.2 13.6 11.5 9.4 7.5 5.3 3.9 2.8 2.4 1.9 0.3 0.1 -0.1 -0.8 -2.3 -2.1 -3.2 -133.9 -157.1 -166.1 -171.3 -173.9 -176.5 -178.9 179.6 177.7 176.4 170.4 166.1 164.8 160.9 154.6 144.7 134.6 125.4 115.2 105.5 94.8 84.2 73.4 63.8 55.1 47.3 39.8 32.3 26.0 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 59. MSG/MAG & |S21|2 vs. Frequency at 3.5V 280mA. 14 -164.7 -173.4 -177.3 -179.8 178.8 177.2 175.8 175.0 173.7 172.4 168.1 163.9 161.0 156.7 150.9 143.3 141.3 130.1 113.5 112.0 100.9 88.2 85.0 75.9 66.5 63.4 49.5 36.6 27.7 0.166 0.301 0.427 0.549 0.622 0.697 0.761 0.843 0.877 0.930 1.070 1.139 1.181 1.206 1.261 1.226 1.239 1.402 1.448 1.484 1.458 1.378 1.614 1.519 1.458 1.495 1.727 1.538 1.632 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.924 0.919 0.918 0.918 0.918 0.915 0.915 0.914 0.919 0.916 0.912 0.911 0.910 0.911 0.909 0.911 0.902 0.904 0.904 0.901 0.897 0.880 0.872 0.849 0.841 0.820 0.809 0.794 0.770 0.766 30.5 25.0 21.7 19.2 17.6 16.0 14.7 13.5 12.5 11.6 8.0 6.0 5.5 3.9 2.0 -0.1 -1.8 -4.1 -5.1 -5.9 -6.4 -6.9 -8.1 -7.8 -8.2 -8.5 -9.0 -9.1 -9.6 -9.2 33.400 17.862 12.118 9.080 7.556 6.328 5.422 4.739 4.232 3.788 2.515 1.991 1.882 1.562 1.255 0.988 0.813 0.624 0.555 0.509 0.477 0.450 0.393 0.408 0.391 0.377 0.354 0.350 0.332 0.346 112.1 99.9 94.6 91.4 88.7 86.5 84.5 82.7 80.8 79.0 71.5 65.8 64.7 59.7 51.5 40.4 25.9 12.7 3.9 -8.3 -14.5 -23.9 -34.0 -42.5 -53.2 -63.5 -69.5 -84.1 -89.0 -99.8 -37.1 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -33.6 -33.2 -31.4 -29.9 -29.6 -28.6 -26.9 -24.4 -22.6 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.4 -15.8 -15.1 -14.7 -13.6 -12.6 -11.5 0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.021 0.022 0.027 0.032 0.033 0.037 0.045 0.060 0.074 0.079 0.093 0.107 0.115 0.130 0.132 0.152 0.162 0.176 0.185 0.210 0.234 0.266 28.4 22.1 22.7 24.6 26.4 29.3 31.3 33.2 35.1 36.7 42.0 44.3 44.7 45.0 43.9 41.0 33.3 24.6 19.3 9.5 6.6 -3.0 -9.7 -14.9 -22.8 -29.9 -35.9 -43.1 -50.5 -60.7 0.703 0.749 0.757 0.760 0.751 0.752 0.753 0.752 0.755 0.750 0.750 0.755 0.753 0.750 0.754 0.746 0.735 0.669 0.664 0.662 0.705 0.751 0.742 0.767 0.798 0.793 0.754 0.785 0.776 0.797 33.8 30.8 29.1 27.5 26.5 25.5 24.6 23.7 23.0 22.4 18.2 15.8 15.2 13.5 11.5 9.3 7.4 5.0 3.8 2.7 2.3 1.5 0.0 0.0 -0.2 -1.0 -2.1 -2.1 -3.1 -2.6 -132.7 -156.5 -165.7 -171.0 -173.6 -176.2 -178.5 179.8 178.0 176.7 170.5 166.0 164.9 160.9 154.7 144.8 134.8 125.5 115.6 105.6 95.4 84.1 73.7 64.2 55.5 47.1 39.3 32.7 25.8 21.5 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 60. MSG/MAG & |S21|2 vs. Frequency at 3.5V 200mA. 15 -162.3 -172.1 -176.5 -179.2 179.4 177.7 176.3 175.3 174.1 172.8 168.3 165.0 164.2 161.3 157.0 151.3 143.7 141.8 130.6 113.9 112.3 101.2 88.5 85.3 76.2 66.8 63.6 49.8 36.9 28.0 0.150 0.269 0.390 0.496 0.559 0.651 0.717 0.777 0.806 0.870 1.057 1.126 1.157 1.215 1.244 1.225 1.255 1.438 1.455 1.466 1.437 1.429 1.646 1.539 1.465 1.527 1.708 1.543 1.634 1.394 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.919 0.920 0.921 0.918 0.915 0.916 0.916 0.914 0.919 0.914 0.912 0.914 0.910 0.912 0.913 0.908 0.903 0.906 0.904 0.902 0.893 0.881 0.873 0.847 0.844 0.827 0.818 0.799 0.780 30.8 25.3 21.9 19.4 17.8 16.3 15.0 13.8 12.8 11.8 8.3 6.3 5.8 4.2 2.3 0.2 -1.5 -3.8 -4.7 -5.5 -5.8 -6.5 -7.6 -7.5 -7.8 -8.2 -8.9 -9.0 -9.3 34.576 18.445 12.499 9.372 7.792 6.537 5.596 4.888 4.370 3.911 2.596 2.059 1.940 1.618 1.296 1.023 0.844 0.647 0.582 0.532 0.513 0.474 0.417 0.424 0.407 0.389 0.357 0.353 0.344 111.7 99.7 94.6 91.5 88.8 86.6 84.7 83.1 81.1 79.3 72.2 66.7 65.6 60.7 52.9 42.0 27.9 15.0 5.9 -6.4 -13.3 -22.0 -32.9 -40.6 -52.7 -63.7 -67.9 -81.4 -90.7 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -21.9 -20.6 -19.4 -18.8 -17.7 -17.5 -16.2 -15.7 -14.9 -14.6 -13.5 -12.5 0.011 0.012 0.013 0.013 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.031 0.032 0.037 0.045 0.060 0.075 0.080 0.093 0.107 0.115 0.131 0.133 0.154 0.165 0.180 0.187 0.211 0.236 29.6 25.5 26.7 30.0 32.7 35.7 37.9 40.0 41.8 43.0 47.8 49.2 49.3 49.0 47.3 43.2 34.8 25.7 20.3 10.3 7.5 -1.9 -8.5 -13.9 -22.0 -29.7 -35.8 -43.1 -50.4 0.722 0.763 0.771 0.773 0.763 0.765 0.765 0.764 0.768 0.762 0.761 0.766 0.765 0.761 0.765 0.756 0.745 0.676 0.670 0.666 0.710 0.756 0.746 0.772 0.802 0.793 0.759 0.786 0.777 35.0 31.9 29.8 28.6 27.2 26.1 25.2 24.3 23.6 22.9 18.0 15.9 15.2 13.6 11.8 9.4 7.6 5.3 4.1 3.1 2.7 1.9 0.5 0.2 0.1 -0.7 -1.9 -2.0 -2.7 -134.2 -157.3 -166.4 -171.4 -174.0 -176.7 -178.9 179.4 178.1 176.2 170.2 165.8 164.7 160.8 154.4 144.7 134.5 125.5 115.1 105.3 95.0 84.1 73.6 63.9 55.4 47.4 40.2 32.9 26.7 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 FREQUENCY (GHz) Figure 61. MSG/MAG & |S21|2 vs. Frequency at 3.5V 360mA. 16 16 18 -166.1 -174.1 -177.8 179.8 178.6 176.9 175.6 174.9 173.4 172.2 168.1 163.8 160.9 156.6 150.8 143.0 141.1 129.9 113.3 111.6 100.7 88.2 84.9 75.7 66.3 63.2 49.4 36.5 27.6 0.191 0.336 0.460 0.599 0.665 0.744 0.809 0.871 0.892 0.963 1.103 1.142 1.185 1.210 1.221 1.236 1.233 1.392 1.430 1.433 1.416 1.388 1.577 1.507 1.407 1.457 1.637 1.526 1.549 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 280 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.914 0.912 0.914 0.913 0.909 0.910 0.911 0.908 0.913 0.907 0.903 0.905 0.903 0.903 0.900 0.902 0.895 0.903 0.898 0.898 0.884 0.871 0.864 0.849 0.854 0.841 0.834 0.824 0.813 31.8 26.4 23.1 20.6 19.0 17.4 16.1 14.9 13.9 13.0 9.4 7.4 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.2 -5.3 -6.0 -6.8 -8.3 -8.3 -8.7 -9.6 -10.0 -10.2 -10.7 39.087 20.961 14.228 10.678 8.871 7.417 6.365 5.577 4.956 4.446 2.951 2.331 2.197 1.822 1.455 1.129 0.916 0.695 0.616 0.546 0.499 0.458 0.386 0.385 0.366 0.330 0.317 0.310 0.291 112.6 100.1 94.5 91.1 88.3 86.0 83.9 81.8 79.9 78.0 69.6 63.5 62.1 56.7 47.9 35.9 20.6 6.8 -3.5 -16.3 -23.2 -31.5 -43.6 -49.9 -60.4 -68.9 -73.5 -83.2 -88.9 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -32.0 -30.5 -30.2 -29.1 -27.3 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.6 -17.3 -15.8 -15.2 -14.4 -14.1 -13.2 -12.4 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.025 0.030 0.031 0.035 0.043 0.057 0.071 0.077 0.091 0.105 0.114 0.132 0.137 0.162 0.174 0.191 0.198 0.219 0.240 29.6 23.9 24.1 26.7 29.0 31.7 34.3 36.0 38.0 39.4 44.5 46.4 47.0 47.3 46.7 43.8 36.2 28.3 22.9 13.3 10.9 1.6 -5.2 -11.5 -20.9 -29.9 -37.0 -45.0 -52.2 0.618 0.661 0.670 0.674 0.662 0.663 0.666 0.667 0.664 0.664 0.672 0.674 0.674 0.672 0.685 0.679 0.681 0.648 0.641 0.636 0.694 0.741 0.731 0.768 0.804 0.807 0.768 0.792 0.788 35.1 32.1 30.1 28.8 27.7 26.7 25.7 24.9 24.2 23.5 18.4 16.3 15.7 14.0 12.0 9.8 8.0 6.1 4.5 3.3 2.4 1.6 -0.2 -0.3 -0.2 -1.3 -2.3 -2.5 -3.5 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.2 -179.8 178.4 176.7 170.5 166.2 165.2 161.0 154.7 145.0 134.9 125.8 115.4 105.8 95.4 84.6 74.2 64.8 56.1 47.7 40.0 31.9 24.7 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 62. MSG/MAG & |S21|2 vs. Frequency at 5.5V 280mA. 17 -158.7 -170.0 -174.9 -177.9 -179.3 179.2 177.8 176.3 175.7 174.5 170.1 166.5 164.0 160.3 155.2 148.6 147.0 135.8 119.2 117.2 106.2 92.7 89.5 79.6 70.2 66.7 52.4 39.7 30.0 0.172 0.307 0.420 0.550 0.638 0.715 0.782 0.850 0.878 0.958 1.141 1.182 1.222 1.284 1.307 1.278 1.271 1.340 1.401 1.416 1.459 1.420 1.655 1.479 1.332 1.385 1.536 1.466 1.533 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 200 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.921 0.914 0.914 0.913 0.909 0.909 0.909 0.908 0.911 0.909 0.905 0.907 0.903 0.906 0.903 0.904 0.899 0.904 0.901 0.896 0.891 0.877 0.871 0.851 0.850 0.839 0.834 0.827 0.814 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.8 12.9 9.3 7.3 6.8 5.2 3.2 1.0 -0.8 -3.2 -4.3 -5.4 -6.1 -7.0 -8.3 -8.2 -8.8 -9.5 -10.2 -10.2 -10.5 38.725 20.822 14.136 10.611 8.824 7.375 6.329 5.549 4.922 4.418 2.933 2.322 2.182 1.815 1.447 1.123 0.909 0.693 0.608 0.536 0.497 0.446 0.386 0.387 0.364 0.335 0.309 0.309 0.298 113.1 100.3 94.7 91.3 88.4 86.0 83.9 81.8 80.0 78.0 69.4 63.4 62.1 56.5 47.8 35.9 20.3 6.5 -4.0 -15.9 -23.9 -32.3 -42.5 -49.0 -60.0 -67.9 -72.5 -82.4 -89.4 -37.7 -37.1 -36.5 -36.5 -35.4 -35.4 -34.9 -34.4 -34.0 -33.6 -31.7 -30.5 -30.2 -28.9 -27.3 -24.9 -23.0 -22.4 -20.9 -19.7 -18.9 -17.7 -17.4 -15.9 -15.3 -14.5 -14.2 -13.3 -12.5 0.013 0.014 0.015 0.015 0.017 0.017 0.018 0.019 0.020 0.021 0.026 0.030 0.031 0.036 0.043 0.057 0.071 0.076 0.090 0.104 0.113 0.131 0.135 0.160 0.172 0.188 0.195 0.216 0.238 29.6 22.8 22.7 24.9 26.8 29.4 31.3 32.9 35.3 36.4 41.7 44.3 44.5 45.1 44.7 42.3 35.1 27.4 22.2 12.6 10.2 1.0 -5.8 -11.8 -21.0 -29.9 -36.8 -44.6 -51.8 0.615 0.659 0.669 0.673 0.662 0.662 0.665 0.667 0.662 0.664 0.673 0.674 0.673 0.671 0.684 0.678 0.681 0.647 0.640 0.634 0.692 0.739 0.730 0.767 0.803 0.805 0.768 0.792 0.790 34.7 31.7 29.7 28.5 27.2 26.4 25.5 24.7 23.9 23.2 18.8 16.5 15.7 14.2 12.1 9.9 8.2 6.2 4.6 3.1 2.6 1.5 -0.1 -0.3 -0.3 -1.3 -2.5 -2.5 -3.2 -130.1 -155.0 -164.6 -170.1 -172.9 -175.7 -178.1 -179.7 178.5 176.8 170.8 166.3 165.3 161.2 155.0 145.1 135.2 126.2 115.6 106.2 95.4 85.0 74.4 64.9 56.2 48.0 39.7 32.2 24.4 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 63. MSG/MAG & |S21|2 vs. Frequency at 5.5V 200mA. 18 -156.5 -168.9 -174.1 -177.3 -178.9 179.6 178.2 176.5 176.0 174.8 170.3 166.6 164.1 160.4 155.3 148.7 147.2 136.0 119.4 117.5 106.3 92.9 89.7 79.8 70.5 66.9 52.7 39.9 30.2 0.145 0.274 0.385 0.510 0.576 0.672 0.739 0.798 0.843 0.897 1.079 1.153 1.208 1.226 1.273 1.257 1.235 1.332 1.386 1.459 1.408 1.403 1.625 1.480 1.364 1.403 1.585 1.472 1.510 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 360 mA Freq. GHz S11 Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG K dB factor 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.904 0.910 0.912 0.912 0.907 0.909 0.909 0.907 0.909 0.906 0.904 0.904 0.900 0.905 0.900 0.904 0.897 0.902 0.899 0.893 0.886 0.867 0.871 0.854 0.855 0.845 0.842 0.833 0.826 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.9 12.9 9.4 7.3 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.3 -5.3 -6.0 -6.8 -8.2 -8.2 -8.9 -9.6 -10.0 -10.2 -10.5 38.785 20.860 14.161 10.635 8.834 7.399 6.337 5.557 4.942 4.429 2.941 2.325 2.191 1.817 1.456 1.130 0.913 0.695 0.609 0.544 0.499 0.455 0.389 0.387 0.360 0.330 0.315 0.309 0.299 113.0 100.3 94.7 91.2 88.4 86.1 83.9 81.9 80.0 78.0 69.7 63.6 62.2 56.6 48.2 35.7 20.7 7.3 -3.7 -16.0 -23.1 -31.7 -43.4 -49.9 -61.2 -68.7 -72.5 -82.1 -87.9 -39.2 -38.4 -37.7 -37.1 -36.5 -35.9 -35.4 -35.4 -34.9 -34.4 -32.0 -30.8 -30.2 -29.1 -27.5 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.5 -17.2 -15.7 -15.1 -14.3 -14.0 -13.2 -12.3 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.025 0.029 0.031 0.035 0.042 0.057 0.071 0.077 0.091 0.105 0.114 0.133 0.138 0.164 0.176 0.192 0.199 0.220 0.242 29.8 24.8 25.5 27.8 30.5 33.4 35.7 37.6 39.7 41.2 46.2 47.9 48.4 48.6 47.4 44.4 36.8 28.9 23.4 13.8 11.7 2.3 -4.6 -11.0 -20.4 -29.6 -36.7 -44.6 -51.8 0.619 0.662 0.672 0.675 0.663 0.664 0.666 0.668 0.665 0.665 0.672 0.676 0.675 0.674 0.686 0.680 0.683 0.649 0.643 0.636 0.696 0.743 0.732 0.769 0.805 0.806 0.769 0.792 0.789 35.5 32.4 30.4 28.8 27.7 26.7 25.7 25.1 24.4 23.7 18.4 16.2 15.5 14.0 12.0 9.9 8.0 6.0 4.5 3.1 2.4 1.4 0.0 -0.2 -0.3 -1.3 -2.2 -2.4 -3.1 -132.0 -156.2 -165.4 -170.7 -173.5 -176.1 -178.3 179.9 178.4 176.7 170.5 166.1 165.1 161.0 155.0 144.9 134.8 125.7 115.5 105.9 95.4 85.0 75.0 65.6 56.8 48.1 40.7 32.6 25.5 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. MSG/MAG & |S21|2 (dB) 40 S21 MSG MAG 30 20 10 0 -10 -20 0 2 4 6 8 10 12 14 FREQUENCY (GHz) Figure 64. MSG/MAG & |S21|2 vs. Frequency at 5.5V 360mA. 19 16 18 -159.9 -170.6 -175.3 -178.2 -179.5 178.9 177.6 176.2 175.5 174.3 170.1 166.5 163.9 160.2 155.1 148.5 146.9 135.8 119.1 117.1 106.1 92.6 89.3 79.4 70.0 66.4 52.1 39.4 29.7 0.198 0.338 0.459 0.571 0.666 0.741 0.808 0.901 0.943 1.008 1.150 1.225 1.254 1.278 1.329 1.267 1.264 1.359 1.402 1.470 1.447 1.439 1.589 1.436 1.323 1.371 1.502 1.436 1.457 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container ATF-501P8-TR1 3000 7” Reel ATF-501P8-TR2 10000 13”Reel ATF-501P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 D pin1 P pin1 8 1 2 e E1 3 R 0PX 4 5 Top View Bottom View A1 A A2 End View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC DIMENSIONS ARE IN MILLIMETERS 20 E 6 b L A 7 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder mask RF transmission line + 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.25 (9.74) 0.60 (23.62) 1.54 (60.61) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 21 0PX 0PX 0PX 0PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10° Max 10° Max A0 DESCRIPTION CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE B0 SYMBOL SIZE (mm) SIZE (inches) LENGTH A0 2.30 ± 0.05 0.091 ± 0.004 WIDTH B0 2.30 ± 0.05 0.091 ± 0.004 DEPTH K0 1.00 ± 0.05 0.039 ± 0.002 PITCH P 4.00 ± 0.10 0.157 ± 0.004 BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.002 DIAMETER D 1.50 ± 0.10 0.060 ± 0.004 PITCH P0 4.00 ± 0.10 0.157 ± 0.004 POSITION E 1.75 ± 0.10 0.069 ± 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 – 0.10 0.254 ± 0.02 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 WIDTH C 5.4 ± 0.10 0.205 ± 0.004 TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2004 Agilent Technologies, Inc. August 24, 2004 5988-9767EN