Agilent ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) Description Agilent Technologies’s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. Pin Connections and Package Marking Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 2 (Gate) • Small package size: 2.0 x 2.0 x 0.75 mm Pin 3 • Point MTTF > 300 years [2] Pin 4 (Source) • MSL-1 and lead-free Pin 1 (Source) • Tape-and-reel packaging option available Bottom View Pin 1 (Source) The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85° C. All devices are 100% RF & DC tested. • Excellent uniformity in product specifications Pin 2 (Gate) Pin 3 Pin 8 1Px Pin 4 (Source) Pin 7 (Drain) Specifications 2 GHz; 4.5V, 200 mA (Typ.) Pin 6 • 41.7 dBm output IP3 Pin 5 • 30 dBm output power at 1 dB gain compression Top View Note: Package marking provides orientation and identification: • 1.4 dB noise figure “1P” = Device Code “x” = Date code indicates the month of manufacture. • 12.1 dB LFOM [4] • 14.8 dB gain • 69% PAE Applications • Front-end LNA Q2 and Q3 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications ATF-511P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain–Source Voltage[2] V 7 VGS Gate–Source Voltage[2] V -5 to 0.8 VGD Gate Drain Voltage[2] V 7 IDS Drain Current[2] A 1 IGS Gate Current mA 46 Pdiss Total Power Dissipation[3] W 3 Pin max. RF Input Power[4] dBm 26 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to 150 θch_b Thermal Resistance[5] °C/W 33 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25°C. Derate 30 mW/°C for TB > 50°C. 4. With 10 Ohm series resistor in gate supply and 3:1 VSWR. 5. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [6,7] 0.8 V 900 Cpk = 1.66 Stdev = 0.6 200 800 160 600 120 +3 Std -3 Std 120 500 -3 Std 0.6 V 400 80 200 40 40 0.5 V 100 0 0 0 2 4 6 8 35 41 38 44 47 OIP3 (dBm) VDS (V) 150 160 Cpk = 3.03 Stdev = 1.85 120 90 -3 Std +3 Std -3 Std 80 +3 Std 60 40 30 0 0 14 15 16 GAIN (dB) Figure 4. Gain LSL = 13.5, Nominal = 14.8, USL = 16.5. 17 52 57 62 67 28 30 29 Figure 3. P1dB LSL = 28.5, Nominal = 30. Cpk = 1.4 Stdev = 0.31 120 0 P1dB (dBm) Figure 2. OIP3 LSL = 38.5, Nominal = 41.7. Figure 1. Typical I-V Curves (Vgs = 0.1 per step). 72 77 82 PAE (%) Figure 5. PAE LSL = 52, Nominal = 68.9. Notes: 6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 2 +3 Std 80 300 13 Cpk = 3.24 Stdev = 0.15 160 0.7 V 700 IDS (mA) 200 240 1000 31 ATF-511P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 200 mA V 0.25 0.51 0.8 Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V — 0.28 — Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA — 16.4 — Gm Transconductance Vds = 4.5V, Gm = ∆Idss/∆Vgs; ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V mmho — 2178 — Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -27 -2 — NF Noise Figure [1] f = 2 GHz f = 900 MHz dB dB — — 1.4 1.2 — — G Gain[1] f = 2 GHz f = 900 MHz dB dB 13.5 — 14.8 17.8 16.5 — OIP3 Output 3rd Order Intercept Point [1,2] f = 2 GHz f = 900 MHz dBm dBm 38.5 — 41.7 43 — — P1dB Output 1dB Compressed [1] f = 2 GHz f = 900 MHz dBm dBm 28.5 — 30 29.6 — — PAE Power Added Efficiency f = 2 GHz f = 900 MHz % % 52 — 68.9 68.6 — — ACLR Adjacent Channel Leakage Power Ratio [1,3] Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc — — -58.9 -62.7 — — Notes: 1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition. 2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. Input 50 Ohm Transmission Line and Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.69 Γ_ang = -164° (1.1 dB loss) DUT Output Matching Circuit Γ_mag = 0.65 Γ_ang = -163° (0.9 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 1.8 nH 2.7 nH 50 Ohm .02 λ 1.2 pF 110 Ohm .03 λ 110 Ohm .03 λ RF Input 50 Ohm .02 λ 1.2 pF RF Output DUT 15 nH 47 nH 15 Ohm 2.2 µF Drain DC Supply 2.2 µF Gate DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 200 mA quiesent bias: Optimum OIP3 Freq (GHz) Gamma Source Mag Ang Gamma Load Mag Ang OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.776 152 0.549 -178 43.3 17.94 29.63 63.8 2.0 0.872 -171 0.683 -179 43.1 15.06 30.12 66.8 2.4 0.893 -162 0.715 -174 42.8 14.03 29.90 64.5 3.9 0.765 -132 0.574 -144 41.7 9.47 29.02 52 Optimum P1dB Freq (GHz) Gamma Source Mag Ang Gamma Load Mag Ang OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.773 153 0.784 -173 38.0 19.28 31.9 54.23 2.0 0.691 147 0.841 -166 36.4 10.34 31.4 38.15 2.4 0.797 164 0.827 -166 36.2 8.43 31.2 37.38 3.9 0.602 -163 0.794 -155 35.4 7.03 31 32.72 4 ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 200 mA 50 50 45 45 40 40 35 30 25 4.5 V 4V 3V 20 15 P1dB (dBm) 35 OIP3 (dBm) OIP3 (dBm) 30 35 30 25 4.5 V 4V 3V 20 25 20 4.5 V 4V 3V 15 15 10 50 150 250 350 450 10 10 550 50 150 250 IDS (mA) 350 450 50 550 150 250 Figure 8. OIP3 vs. IDS and VDS at 2 GHz. 450 550 Figure 10. P1dB vs. IDS and VDS at 2 GHz. Figure 9. OIP3 vs. IDS and VDS at 900 MHz. 35 350 IDS (mA) IDS (mA) 17 20 16 19 15 18 25 20 4.5 V 4V 3V 15 GAIN (dB) GAIN (dB) P1dB (dBm) 30 14 13 4.5 V 4V 3V 12 11 10 150 250 350 450 550 150 250 450 70 70 60 60 50 50 40 10 450 550 IDS (mA) Figure 14. PAE vs. IDS and VDS at 2 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 550 45 40 50 150 40 35 -40 °C 25 °C 85 °C 30 4.5 V 4V 3V 25 0 350 450 Figure 13. Gain vs. IDS and VDS at 900 MHz. 10 0 350 50 20 250 250 IDS (mA) 30 4.5 V 4V 3V 150 150 50 550 OIP3 (dBm) 80 PAE (%) PAE (%) 350 Figure 12. Gain vs. IDS and VDS at 2 GHz. 80 30 5 14 IDS (mA) Figure 11. P1dB vs. IDS and VDS at 900 MHz. 50 4.5 V 4V 3V 13 50 IDS (mA) 20 16 15 10 50 17 250 350 450 550 IDS (mA) Figure 15. PAE vs. IDS and VDS at 900 MHz. 20 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 16. OIP3 vs. Temp and Freq. 3.5 4 ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V, 200 mA 35 20 80 70 30 25 20 -40 °C 25 °C 85 °C 15 60 PAE (%) GAIN (dB) P1dB (dBm) 15 10 -40 °C 25 °C 85 °C 5 50 40 30 -40 °C 25 °C 85 °C 20 10 10 0.5 1 1.5 2 2.5 3 3.5 0 0.5 4 1 1.5 FREQUENCY (GHz) 2 2.5 3 3.5 0 0.5 4 1 1.5 FREQUENCY (GHz) Figure 17. P1dB vs. Temp and Freq. 2 2.5 3 4 3.5 FREQUENCY (GHz) Figure 18. Gain vs. Temp and Freq. Figure 19. PAE vs. Temp and Freq. ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5 V, 200 mA 50 50 45 45 40 40 35 35 30 25 4.5 V 4V 3V 20 15 P1dB (dBm) OIP3 (dBm) OIP3 (dBm) 30 35 30 25 4.5 V 4V 3V 20 15 50 150 250 350 450 150 350 450 GAIN (dB) 30 25 20 22 10 20 8 18 6 350 450 550 IDS (mA) Figure 23. P1dB vs. IDS and VDS at 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 6 450 550 16 4.5 V 4V 3V 12 10 0 250 350 14 4.5 V 4V 3V 2 10 250 Figure 22. P1dB vs. IDS and VDS at 2 GHz. 12 4 4.5 V 4V 3V 150 150 IDS (mA) GAIN (dB) 35 50 50 550 Figure 21. OIP3 vs. IDS and VDS at 900 MHz. Figure 20. OIP3 vs. IDS and VDS at 2 GHz. P1dB (dBm) 250 IDS (mA) IDS (mA) 15 4.5 V 4V 3V 10 50 550 20 15 10 10 25 50 150 250 350 450 IDS (mA) Figure 24. Gain vs. IDS and VDS at 2 GHz. 550 50 150 250 350 450 550 IDS (mA) Figure 25. Gain vs. IDS and VDS at 900 MHz. ATF-511P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal P1dB at 4.5V, 200 mA 50 45 70 60 40 40 OIP3 (dBm) PAE (%) PAE (%) 50 30 40 20 35 30 30 4.5 V 4V 3V 10 4.5 V 4V 3V 20 10 0 150 50 250 350 450 550 50 150 250 IDS (mA) 350 450 20 0.5 550 1 Figure 27. PAE vs. IDS and VDS at 900 MHz. 40 1.5 2 2.5 3 3.5 4 3.5 4 FREQUENCY (GHz) IDS (mA) Figure 26. PAE vs. IDS and VDS at 2 GHz. Figure 28. OIP3 vs. Temp and Freq. 20 70 60 35 15 50 25 PAE (%) 30 GAIN (dB) P1dB (dBm) -40 °C 25 °C 85 °C 25 10 40 30 20 -40 °C 25 °C 85 °C 15 10 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Figure 29. P1dB vs. Temp and Freq. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 7 20 5 0 0.5 -40 °C 25 °C 85 °C 1 1.5 -40 °C 25 °C 85 °C 10 2 2.5 3 FREQUENCY (GHz) Figure 30. Gain vs. Temp and Freq. 3.5 4 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 31. PAE vs. Temp and Freq. ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 300 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.94 0.93 0.93 0.93 0.92 0.93 0.92 0.93 0.92 0.93 0.93 0.93 0.92 0.92 0.92 0.91 0.91 0.91 0.91 0.91 0.90 0.89 0.89 0.89 0.90 0.90 0.89 0.83 0.86 -134.9 -157.7 -166.6 -171.8 -173.9 -176.9 -178.8 178.7 177.1 175.7 168.7 163.0 157.8 152.5 142.8 133.2 124.6 115.7 106.0 95.5 85.2 74.3 63.0 54.1 46.3 40.6 33.3 25.4 20.0 31.16 25.64 22.26 19.78 18.70 17.12 15.78 14.61 13.58 12.64 8.99 6.36 4.40 2.73 0.03 -2.17 -4.21 -5.80 -6.82 -7.36 -7.98 -8.69 -9.25 -9.80 -10.25 -10.86 -11.16 -11.81 -12.07 36.15 19.14 12.97 9.74 8.60 7.18 6.15 5.37 4.77 4.28 2.81 2.08 1.66 1.36 1.00 0.77 0.61 0.51 0.45 0.42 0.40 0.38 0.35 0.32 0.31 0.30 0.32 0.24 0.24 111.2 99.2 94.2 90.9 88.9 86.1 84.3 82.3 80.6 79.1 71.4 64.2 57.2 50.4 37.6 24.2 14.1 5.6 -2.6 -10.2 -22.2 -29.1 -40.1 -51.7 -55.2 -57.3 -71.1 -75.3 -90.5 -38.53 -37.87 -37.61 -37.09 -36.15 -35.80 -35.41 -35.11 -35.00 -34.46 -32.70 -31.27 -29.90 -28.59 -26.69 -25.30 -24.32 -23.48 -22.49 -21.39 -20.50 -19.72 -19.42 -19.12 -18.65 -18.57 -18.02 -17.65 -17.43 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.12 0.13 0.13 29.7 21.8 21.1 23.4 25.4 27.0 29.5 32.5 33.1 35.0 40.0 42.3 42.5 41.6 35.7 29.8 23.7 19.5 14.1 8.5 0.4 -8.4 -17.1 -23.9 -29.7 -35.8 -42.3 -47.1 -53.1 0.73 0.76 0.78 0.78 0.75 0.75 0.75 0.76 0.75 0.76 0.76 0.76 0.76 0.75 0.74 0.71 0.65 0.59 0.56 0.58 0.60 0.63 0.65 0.67 0.69 0.69 0.71 0.73 0.76 34.79 31.68 29.99 28.43 27.31 26.52 25.59 24.75 24.24 23.53 20.88 17.20 14.71 12.65 9.96 7.23 4.97 3.02 1.86 1.19 0.53 -0.04 -0.61 -1.04 -1.13 -1.88 -2.26 -3.17 -3.76 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 30 MSG 20 10 MAG 0 S21 -10 -20 0 5 10 15 FREQUENCY (GHz) Figure 32. MSG/MAG & |S21|2 (dB) @ 4.5V, 300 mA. 8 20 -164.5 -173.7 -176.8 -179.9 178.9 176.9 175.5 174.0 172.8 171.6 166.0 160.6 155.5 149.7 138.6 127.2 117.2 111.3 108.2 103.7 96.0 87.2 77.6 68.2 58.7 50.1 41.8 35.1 27.7 ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.94 0.93 0.94 0.93 0.92 0.92 0.92 0.92 0.93 0.92 0.93 0.93 0.92 0.93 0.91 0.91 0.91 0.90 0.90 0.91 0.91 0.89 0.89 0.89 0.90 0.90 0.91 0.85 0.87 -132.6 -156.3 -165.6 -170.8 -173.1 -176.2 -178.2 179.4 177.4 176.0 168.9 163.6 157.9 152.6 143.1 133.7 124.7 115.7 105.6 95.7 84.9 74.0 63.1 54.0 46.4 38.8 33.1 26.8 19.3 31.26 25.79 22.40 19.93 18.84 17.26 15.92 14.76 13.72 12.77 9.13 6.49 4.50 2.81 0.16 -2.08 -4.02 -5.75 -6.77 -7.45 -7.95 -8.29 -9.19 -9.74 -10.17 -10.85 -10.77 -11.05 -11.53 36.54 19.47 13.18 9.92 8.75 7.29 6.25 5.47 4.85 4.34 2.86 2.11 1.67 1.38 1.01 0.78 0.62 0.51 0.45 0.42 0.40 0.38 0.34 0.326 0.31 0.28 0.28 0.28 0.26 112.1 99.6 94.4 91.1 89.0 86.2 84.3 82.3 80.4 79.1 70.9 63.7 56.8 49.3 35.8 22.7 12.0 3.3 -3.9 -12.1 -22.4 -32.0 -39.5 -51.1 -58.1 -67.8 -73.7 -83.3 -100.4 -37.40 -36.68 -36.47 -36.17 -35.11 -34.84 -34.72 -34.37 -34.02 -33.71 -32.20 -30.97 -29.65 -28.54 -26.68 -25.40 -24.42 -23.61 -22.73 -21.60 -20.76 -19.93 -19.45 -19.03 -18.78 -18.47 -18.19 -17.88 -17.54 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.12 0.12 0.13 27.2 19.2 19.9 19.9 24.6 23.9 25.6 27.6 28.6 30.8 35.0 38.2 39.1 38.1 33.9 28.0 22.3 18.2 14.4 8.4 0.9 -8.6 -16.8 -24.1 -30.7 -36.1 -42.9 -47.5 -53.8 0.70 0.74 0.76 0.76 0.73 0.73 0.73 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.73 0.70 0.65 0.58 0.54 0.55 0.58 0.61 0.64 0.67 0.68 0.68 0.71 0.73 0.75 34.49 31.13 29.44 27.93 26.87 26.08 25.41 24.59 23.85 23.16 20.59 17.50 14.78 13.16 9.84 7.34 5.01 2.77 1.56 1.13 0.82 -0.05 -0.82 -1.38 -1.33 -1.80 -2.11 -2.60 -2.83 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 30 MSG 2 MSG/MAG & |S21| (dB) 40 20 10 MAG 0 S21 -10 -20 0 5 10 15 FREQUENCY (GHz) Figure 33. MSG/MAG & |S21|2 (dB) @ 4.5V, 200 mA. 9 20 -161.0 -171.6 -175.6 -178.8 179.9 177.8 176.2 174.7 173.4 172.2 166.5 161.1 155.9 150.2 139.0 127.4 117.0 110.2 107.5 103.9 97.0 88.4 78.9 69.1 59.6 50.9 42.0 35.3 27.3 ATF-511P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 100 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.93 0.93 0.93 0.92 0.91 0.91 0.92 0.92 0.92 0.91 0.92 0.91 0.91 0.91 0.91 0.91 0.90 0.90 0.90 0.90 0.9 0.89 0.90 0.89 0.90 0.88 0.90 0.86 0.86 -125.4 -152.1 -162.8 -168.7 -170.8 -174.4 -176.8 -179.0 178.7 177.0 169.8 163.9 158.8 153.0 143.7 134.0 125.0 115.7 106.4 96.5 86.1 75.4 63.8 54.7 46.5 40.2 33.5 26.4 19.3 30.99 25.70 22.34 19.90 18.78 17.21 15.88 14.72 13.69 12.73 9.11 6.49 4.52 2.89 0.20 -2.08 -4.20 -6.04 -7.35 -8.14 -8.45 -9.46 -9.59 -10.42 -10.99 -11.15 -11.50 -11.50 -11.51 35.43 19.27 13.09 9.88 8.68 7.25 6.22 5.44 4.83 4.33 2.85 2.11 1.68 1.39 1.02 0.78 0.61 0.49 0.42 0.39 0.37 0.33 0.33 0.30 0.28 0.27 0.26 0.26 0.26 115.3 101.4 95.5 91.8 89.5 86.6 84.4 82.3 80.4 78.8 70.2 62.8 55.2 47.7 33.1 19.2 7.3 -1.6 -7.7 -16.4 -25.3 -35.2 -46.1 -52.9 -59.8 -70.6 -71.7 -80.8 -92.6 -34.72 -33.88 -33.70 -33.49 -32.50 -32.42 -32.20 -32.13 -32.02 -31.85 -30.95 -30.00 -29.22 -28.39 -26.77 -25.62 -24.73 -23.99 -23.23 -22.04 -20.89 -20.08 -19.41 -19.02 -18.87 -18.71 -18.22 -18.28 -17.88 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.09 0.09 0.10 0.11 0.11 0.11 0.12 0.12 0.12 28.6 18.9 15.5 16.5 17.7 17.6 19.1 18.8 18.9 20.6 24.8 27.8 29.0 29.0 27.2 22.2 17.3 14.3 11.2 7.2 0.5 -7.5 -16.7 -25.1 -31.7 -38.2 -45.5 -49.0 -54.8 0.65 0.70 0.72 0.72 0.69 0.7 0.7 0.70 0.70 0.70 0.70 0.71 0.71 0.71 0.70 0.68 0.64 0.56 0.51 0.51 0.54 0.58 0.62 0.65 0.67 0.68 0.70 0.72 0.74 32.94 29.84 27.95 26.73 25.59 24.80 23.96 23.38 22.86 22.22 20.08 18.19 14.84 12.76 9.92 7.42 4.79 2.45 0.71 0.01 -0.37 -1.33 -1.60 -1.93 -2.12 -2.66 -2.83 -3.33 -3.69 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 30 MSG 20 10 MAG 0 S21 -10 -20 0 5 10 15 FREQUENCY (GHz) Figure 34. MSG/MAG & |S21|2 (dB) @ 4.5V, 100 mA. 10 20 -151.1 -166.3 -172.2 -176.0 -177.2 -179.7 178.3 176.6 175.2 173.8 167.8 162.3 157.2 151.6 140.4 128.7 117.4 109.1 106.4 105.0 99.3 90.9 81.3 71.3 61.4 52.4 43.3 35.9 27.9 ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.94 0.93 0.93 0.94 0.93 0.93 0.93 0.92 0.92 0.93 0.92 0.93 0.92 0.92 0.92 0.91 0.92 0.91 0.91 0.90 0.92 0.90 0.91 0.90 0.94 0.87 0.89 0.89 0.88 -133.7 -156.9 -165.9 -170.9 -174.5 -175.8 -178.2 179.7 178.0 176.3 169.6 164.4 159.6 154.2 144.9 135.5 126.6 117.1 108.2 99.1 89.2 79.6 70.9 62.2 53.8 45.0 37.7 30.5 25.4 30.85 25.31 21.89 19.48 17.53 16.77 15.53 14.28 13.21 12.34 8.63 6.12 4.07 2.30 -0.31 -2.55 -4.30 -5.64 -6.81 -7.13 -7.76 -8.39 -8.92 -9.42 -9.84 -10.51 -10.74 -10.03 -11.77 34.87 18.41 12.43 9.42 7.52 6.89 5.97 5.17 4.57 4.13 2.70 2.02 1.59 1.30 0.96 0.74 0.60 0.52 0.45 0.44 0.40 0.38 0.35 0.33 0.32 0.29 0.29 0.31 0.25 111.4 99.5 94.2 90.9 88.8 86.0 84.2 82.5 80.5 78.6 71.0 63.5 57.0 50.3 37.4 25.4 15.1 6.50 -2.8 -13.7 -21.2 -30.0 -42.9 -48.9 -60.1 -68.5 -72.4 -85.1 -91.8 -37.28 -36.61 -36.19 -35.98 -35.84 -34.69 -34.42 -34.11 -33.77 -33.66 -32.21 -30.69 -29.46 -28.47 -26.48 -25.14 -24.15 -23.20 -22.06 -21.10 -20.40 -19.67 -19.28 -19.11 -18.86 -18.58 -18.59 -17.88 -17.72 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.04 0.05 0.06 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.11 0.11 0.11 0.12 0.13 28.2 20.4 20.2 20.4 23.0 23.5 25.0 27.1 29.2 29.6 34.5 38.0 39.4 37.7 33.8 28.4 23.4 18.3 12.3 5.2 -2.7 -11.0 -19.9 -27.2 -33.1 -38.4 -43.7 -48.3 -59.0 0.73 0.76 0.78 0.78 0.78 0.76 0.75 0.76 0.76 0.76 0.76 0.76 0.76 0.75 0.73 0.69 0.64 0.62 0.62 0.62 0.64 0.65 0.66 0.67 0.68 0.7 0.71 0.73 0.74 33.96 30.89 28.90 27.70 26.73 25.83 24.98 24.13 23.60 22.95 20.34 17.32 14.52 12.34 9.75 6.74 5.17 3.27 2.03 1.60 1.40 0.26 0.15 -0.69 -1.20 -1.56 -1.97 -2.50 -2.82 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 30 MSG 20 10 MAG 0 S21 -10 -20 0 5 10 15 FREQUENCY (GHz) Figure 35. MSG/MAG & |S21|2 (dB) @ 4V, 200 mA. 11 20 -162.5 -172.6 -176.3 -179.5 178.5 177.3 175.5 173.9 172.5 171.4 165.3 159.2 154.1 148.6 137.1 127.3 119.4 114.5 108.5 100.8 90.4 79.3 67.0 57.1 48.7 40.0 36.3 28.8 19.5 ATF-511P8 Typical Scattering Parameters, VDS = 3V, IDS = 200 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. S22 Mag. Ang. MSG/MAG dB 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.95 0.94 0.94 0.94 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.92 0.93 0.92 0.93 0.91 0.91 0.90 0.92 0.92 0.91 0.91 0.92 0.88 0.87 0.83 0.85 -137.1 -159.0 -167.3 -172.0 -175.3 -176.8 -178.7 179.1 177.3 176.1 169.4 164.0 159.1 154.0 144.8 135.2 126.0 116.6 107.4 98.4 89.0 79.5 70.1 61.9 51.8 44.1 36.4 30.1 24.0 29.51 23.89 20.46 18.04 16.10 15.36 14.14 12.87 11.82 10.91 7.24 4.75 2.73 0.93 -1.58 -3.78 -5.54 -7.07 -7.66 -8.06 -8.99 -9.12 -9.28 -9.71 -10.04 -10.01 -10.16 -10.61 -11.96 29.89 15.65 10.54 7.98 6.38 5.86 5.09 4.4 3.89 3.51 2.30 1.72 1.36 1.11 0.83 0.64 0.52 0.44 0.41 0.39 0.35 0.35 0.34 0.32 0.31 0.31 0.31 0.31 0.25 109.9 98.7 93.8 90.7 88.7 85.9 84.2 82.6 80.6 78.9 71.8 64.7 58.5 51.6 38.7 27.3 17.2 10.5 2.06 -5.6 -15.9 -25.8 -35.9 -39.9 -54.7 -59.8 -77.5 -87.2 -97.4 -36.88 -36.27 -36.20 -35.82 -35.59 -34.34 -34.27 -34.12 -33.66 -33.55 -31.97 -30.60 -29.39 -28.15 -26.26 -24.91 -24.05 -23.11 -22.08 -21.04 -20.23 -19.45 -19.08 -18.93 -18.89 -18.63 -18.83 -18.17 -17.69 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.13 25.2 19.8 18.0 20.5 22.4 24.0 24.8 27.1 29.1 29.3 35.4 38.5 38.5 37.4 33.1 27.7 22.1 17.2 12.1 5.0 -2.7 -12.4 -21.4 -29.2 -35.6 -40.7 -44.7 -51.2 -58.3 0.78 0.81 0.82 0.83 0.83 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.81 0.80 0.78 0.74 0.68 0.63 0.62 0.63 0.64 0.66 0.68 0.69 0.70 0.72 0.73 0.74 0.75 33.29 30.18 28.47 26.98 25.75 24.89 24.28 23.42 22.69 22.23 19.64 16.34 14.08 11.72 9.24 6.28 4.39 1.96 1.32 0.60 0.49 0.19 -0.19 -0.68 -0.40 -1.57 -1.85 -2.42 -3.71 MSG/MAG & |S21|2 (dB) 40 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 30 MSG 20 10 MAG 0 S21 -10 -20 0 5 10 15 FREQUENCY (GHz) Figure 36. MSG/MAG & |S21|2 (dB) @ 3V, 200 mA. 12 20 -166.0 -174.5 -177.6 179.4 177.6 176.3 174.6 173.1 171.7 170.7 164.6 158.5 153.4 147.6 135.8 125.0 115.6 110.7 106.3 99.5 89.8 78.7 66.3 56.4 47.9 39.0 35.3 27.7 18.3 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container ATF-511P8-TR1 3000 7” Reel ATF-511P8-TR2 10000 13”Reel ATF-511P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 D pin1 P pin1 8 1 2 e E1 3 R 1PX 4 5 Top View Bottom View A1 A A2 End View Side View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 DIMENSIONS ARE IN MILLIMETERS 13 E 6 b L A 7 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC 0.30 0.45 PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder mask RF transmission line + 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.25 (9.74) 0.60 (23.62) 1.54 (60.61) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 14 1PX 1PX 1PX 1PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10° Max 10° Max A0 DESCRIPTION CAVITY PERFORATION CARRIER TAPE COVER TAPE DISTANCE 15 B0 SYMBOL SIZE (mm) SIZE (inches) LENGTH A0 2.30 ± 0.05 0.091 ± 0.004 WIDTH B0 2.30 ± 0.05 0.091 ± 0.004 DEPTH K0 1.00 ± 0.05 0.039 ± 0.002 PITCH P 4.00 ± 0.10 0.157 ± 0.004 BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.002 DIAMETER D 1.50 ± 0.10 0.060 ± 0.004 PITCH P0 4.00 ± 0.10 0.157 ± 0.004 POSITION E 1.75 ± 0.10 0.069 ± 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 – 0.10 0.254 ± 0.02 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 WIDTH C 5.4 ± 0.10 0.205 ± 0.004 TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2002 Agilent Technologies, Inc. December 3, 2002 5988-8246EN