HITACHI ECN2112

P1/12
HIGH-VOLTAGE MONOLITHIC IC
ECN2102/2112
ECN2102 / 2112 is a single chip row driver IC for electroluminescent (EL) display panel.
Functions
* Low-voltage serial to high-voltage
parallel converter
* 34 outputs of totem pole type
Features
* Output terminal voltage up to 250V
* Source / Sink current 500mA
ECN2102
ECN2112
Fig. 1. OUTLINE OF FP-48 PACKAGE
Vcc
STB
Vcc
OE
D
R1
Q1
34 bit
static
shift
register R2
Q2
CLK
Q34
R34
D-FF
SO
Function Block Diagram (Positive Logic)
PDE-2102/12-0.1
P2/12
ECN2102/2112
1. GENERAL
(1) TYPE
ECN2102/ECN2112
(2) APPLICATION
Row line driver for Electroluminecent (EL)
(3) STRUCTURE
Monolithic IC, processed Dielectric Isolation.
(4) PACKAGE
FP-48 (Fig.1)
2. MAXIMUM ALLOWABLE RATING
No ITEMS
display panel
(Ta=25°C)
SYMBOLS
RATINGS
UNITS
CONDITIONS
1
Supply Voltage (logic)
Vcc
-0.5 ~ +7.0
V
to GND terminal
2
Input Voltage
Vin
-0.5 ~ Vcc+0.5
V
to GND terminal
3
Vs - GND Voltage
VSG
Vcc
V
to GND terminal
4
Output Terminal Voltage
VQ
±250
V
Between Vs,Vcc,GND,
(logic)
Input and Q output
5
Allowable Power Dissipation
PT
800
mW
6
Operating Temperature
TOP
-40 ~ +85
°C
7
Storage Temperature
Tstg
-55 ~ +150
°C
3. RECOMMENDED OPERATING CONDITIONS
No ITEMS
SYMBOLS Min.
Typ.
Max.
UNITS
CONDITIONS
1
Supply Voltage (logic)
Vcc
5.0
5.5
6.0
V
2
Clock Frequency
fCLK
-
-
250
kHz
3
Clock Pulse Width
twCLK
80
-
-
ns
4
Data Setup Time
tsu
80
-
-
ns
5
Data Hold Time
th
80
-
-
ns
6
Output Terminal Voltage
VQ
-
±230
-
V
7
Peak Output Source Current
HIOH
-
-
-500
mA
Note 1
8
Peak Output Sink Current
HIOL
-
-
+500
mA
Note 1
Vcc= 5.5V
Vin= 0V/5.5V
Vcc= 5.5V
Note1 : Conduction period £ 5 ms per 1 IC
PDE-2102/12-0.1
P3/12
ECN2102/2112
4. ELECTRICAL CHARACTERISTICS
No ITEMS
1
2
3
4
5
Output Voltage (logic)
Output Current (logic)
Input Voltage
Input Current
(logic)
(logic)
Dissipation Current(logic)
(Unless otherwise specified, Ta= 25°C, Vcc= 5.5V, HVCC=230V)
SYMBOLS
Min.
Typ.
VOL
-
-
0.1
V
IOL= 20mA
VOH
5.4
-
-
V
IOH=-20mA
IOL
1.0
-
-
mA
VOL= 0.8V
IOH
-1.0
-
-
mA
VOLH 4.7V
VIL
-
-
1.0
V
VIH
3.5
-
-
V
VTHL
-
-
0.4
V
VTLH
4.5
-
-
V
IIH
-
-
10
mA
Vin=5.5V all input/1 input
IIL
-
-
-10
mA
Vin=0V D,CLK/1 input
-
-
-100
mA
Vin=0V STB/1 input
-
-
10
mA
No signal all input 5.5V,
Istb
Max. UNITS C O N D I T I O N S
D input
CLK,STB input
all output Off
6
Output Voltage
-
-
25
mA
No signal, 1ch source output On
-
-
5
mA
No signal, 1ch sink output On
-
-
3.0
V
HIOL=1mA
Q out-GND
-
-
6.0
V
HIOL=200mA
Q out-GND
-
-
4.0
V
HIOH=-1mA
Vs-Q out
-
-
8.0
V
HIOH=-200mA
Vs-Q out
dv/dt1
200
-
-
V/ms
Vs~Q out,+dv/dt apply.Fig.6
dv/dt2
200
-
-
V/ms
Q out~GND,-dv/dt apply.Fig.7
toff
-
-
6.0
ms
Source side
-
-
7.0
ms
Sink side
HVOL
HVOH
7
8
Output SCR dv/dt capability
Output SCR Off Period
Fig.8
5. SWITCHING CHARACTERISTICS (Unless otherwise specified, Ta= 25°C, Vcc= 5.5V, Fig.5)
No ITEMS
1
2
Output Delay Time (logic)
Output Delay Time
SYMBOLS
Min.
Typ.
Max. UNITS C O N D I T I O N S
tPLH
-
-
300
ns
tPHL
-
-
300
ns
tQLH
-
-
3
ms
RLQ=1kW
tQHL
-
-
3
ms
CLQ=2000pF
CL=15pF
PDE-2102/12-0.1
P4/12
ECN2102/2112
Vcc
(*) : Q outputs are "OFF" at "H" level.
STB
Vcc
(*)
OE
R1
Q1
34 bit
static
shift
register R2
Q2
D
CLK
Q34
R34
SO
D-FF
Fig. 2. Function Block Diagram (Positive Logic)
6. FUNCTION TABLE
CONTROL INPUT
SHIFT
OPERATION
OUTPUT
SHIFT REGISTER
CLK
D
OE(*4)
STB
Rn
-
*
H
*
shift
no-
*
H
*
keep
H
H
L
*
H
OPERATION
*
H
SO(*1)
L
L
H
OUTPUT
*
Q
H (*2)
R34
OFF
H
L (*3)
L
OFF
*
ALL OFF
(*1) 34th data is pushed out as output at the state of down edge¯ of clock signal.
(*2) When shift register is "H", source SCR of Q output is driven to ON.
(*3) When shift register is "H", sink SCR of Q output is driven to ON.
(*4) OE must be kept "H".
PDE-2102/12-0.1
P5/12
ECN2102/2112
7. INPUT / OUTPUT CIRCUIT
Equivalent of each input
Typical of serial output
Pull up
Vcc
Vcc
Typical of all Q output
Vcc
Vs
source SCR
()
Input
Output
Q output
sink SCR
GND
GND GND
Fig. 3. Input / Output Circuit
PDE-2102/12-0.1
P6/12
ECN2102/2112
8. EXAMPLE OF OPERATING TIMING CHART
D
ECN2102 CLK
ECN2112 CLK
H fix.
OE
STB
+HV
Vs
GND
-HV
(
means floating condition.)
ECN2102 Qn
ECN2112 Qn
ECN2102 Qn+1
ECN2112 Qn+1
HV : High Voltage
Fig. 4. Example of Operating Timing Chart
PDE-2102/12-0.1
P7/12
ECN2102/2112
9. MEASUREMENT AND MEASUREMENT CIRCUIT
1/f CLK
t WCLK
CLK
Tn : Figure n means n th pulse
T1
T2
T34
50%
50%
50%
INPUT CONDITION
t ILH, t IHL =10ns typ.
tsu th
t ILH
50%
D
t PLH
SO
t PHL
50%
50%
t IHL
5.5V
90%
0V
10%
(a) Shift function (SW1®OFF, SW2,3®ON)
SW1
OFF
ON
OFF
OFF
SW2
ON
ON
OFF
OFF
ON
OFF
D
50%
CLK
OE
50%
H fix.
50%
STB
50%
t QHL
t QLH
90%
Q1
t QLH
t QHL
10%
90%
Q2
10%
Other Q output
(b) Output Function (SW3®OFF)
250V
SW1
5.5V
Vcc
CLK
Vs Q1
D
RLQ CLQ
Q2
OE
STB
RLQ=1kW
CLQ=2000pF
CL=15pF
Q34
GND
SO
SW3
CL
SW2
Measurement point
Fig. 5. Switching Characteristics Measurement Circuit
PDE-2102/12-0.1
P8/12
ECN2102/2112
1000pF
5.5V
Vcc
CLK
1kW
Vs
Q1
D
+dV/dt pulser
(to reach 150V)
Q2
OE
STB
Q34
GND
SO
Fig. 6. Output SCR dV/dt capability (dV/dt1) Measurement Circuit
5.5V
Vcc
CLK
Vs
D
Q1
Q2
OE
Q34
STB
GND
SO
1000pF
-dV/dt pulser
(to reach -150V)
1kW
Fig. 7. Output SCR dV/dt capability (dV/dt2) Measurement Circuit
PDE-2102/12-0.1
P9/12
ECN2102/2112
Io
¬
5.5V
Vcc
CLK
Vs
D
Qn
OE
STB
GND
1 2
SO
34
CLK
D
OE
STB
H fix.
H fix.
dV/dt @ 100V/ms
MIN 150V
Vs
100mA
Io
SCR OFF
SCR ON by mistake
tOFF
(a) Source SCR
5.5V
Vcc
CLK
Vs
D
Io
Qn
¬
OE
STB
GND
1 2
SO
34
CLK
D
OE
STB
H fix.
L fix.
MIN 150V
dV/dt@100V/ms
Vs
Io
100mA
tOFF
SCR OFF
SCR ON by mistake
(b) Sink SCR
Fig. 8. Output SCR tOFF Measurement
PDE-2102/12-0.1
P10/12
ECN2102/2112
10. PIN LOCATION
Q34
Q1
Q33
Q2
Q32
Q3
Q31
Q4
Q30
Q5
Q29
Q6
Q28
Q7
Q27
Q8
Q26
Q9
Q25
Q10
Q24
Q11
Q23
Q12
Q22
Q13
Q21
Q14
Q20
Q15
Q19
Q16
Q18
Q17
Vs
Vs
GND
GND
Vcc
(NC)
(NC)
OE
STB
(NC)
(NC)
CLK
SO
D
(a) ECN2102
Q1
Q34
Q2
Q33
Q3
Q32
Q4
Q31
Q5
Q30
Q6
Q29
Q7
Q28
Q8
Q27
Q9
Q26
Q10
Q25
Q11
Q24
Q12
Q23
Q13
Q22
Q14
Q21
Q15
Q20
Q16
Q19
Q17
Q18
Vs
Vs
GND
GND
(NC)
Vcc
OE
(NC)
(NC)
STB
CLK
(NC)
D
SO
(b) ECN2112
Fig. 9. Pin Location (Top view)
PDE-2102/12-0.1
P11/12
ECN2102/2112
11. PACKAGE OUTLINE
(1) ECN2102
(Unit : mm)
18.8±0.4
NOTE 2
3.05 MAX.
14.0 ±0.2
0.35±0.1
NOTE 1
20.0 TYP.
9.2±0.3
NOTE 3
NOTE 1
0.8±0.15
0.15±0.05
1.25 TYP.
9.2±0.3
NOTE 1
SURFACE
2.40 TYP.
NOTE 5
0 - 10°
1.20±0.20
Notes.
1. THIS DIMENSION IS MEASURED AT ROOT OF LEAD. SPACING AT TIP OF LEAD IS MIN 0.2.
2. THIS DIMENSION INCLUDES A WARPAGE OF PACKAGE.
3. MARKING IS ON THE SURFACE OF PACKAGE, INCLUDING HITACHI MARK, TYPE NAME,
LOT NUMBER, AND JAPAN MARK.
4. LEADS ARE SOLDER PLATED.
5. THIS IS THE BENDING ANGLE WITH HORIZONTAL PLANE.
Fig. 10. Package outline (ECN2102)
PDE-2102/12-0.1
P12/12
ECN2102/2112
(Unit : mm)
(2) ECN2112
18.8±0.4
NOTE 2
3.05 MAX.
14.0 ±0.2
0.35±0.1
NOTE 1
20.0 TYP.
9.2±0.3
NOTE 3
NOTE 1
1.25 TYP.
0.8±0.15
9.2±0.3
NOTE 1
SURFACE
2.40 TYP.
NOTE 5
0.15±0.05
0 - 10°
1.20±0.20
Notes.
1. THIS DIMENSION IS MEASURED AT ROOT OF LEAD. SPACING AT TIP OF LEAD IS MIN 0.2.
2. THIS DIMENSION INCLUDES A WARPAGE OF PACKAGE.
3. MARKING IS ON THE SURFACE OF PACKAGE, INCLUDING HITACHI MARK, TYPE NAME,
LOT NUMBER, AND JAPAN MARK.
4. LEADS ARE SOLDER PLATED.
5. THIS IS THE BENDING ANGLE WITH HORIZONTAL PLANE.
Fig. 11. Package outline (ECN2112)
PDE-2102/12-0.1
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
„ For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse