HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two un-connected amplifiers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +22 dBm of output power can be achieved. Using a Darlington feedback pair results in reduced sensitivity to normal process variations and provides a good 50-ohm input/ output port match. This amplifier is ideal for RF systems where high linearity is required. The design can operate in 50-ohm and 75-ohm systems which makes it ideal for CATV head-end and modem, and MCNS applications. Output IP3: +31 dBm Single Supply: 8.75V Ultra Small Package: MSOP8G SMT AMPLIFIERS 1 Features Guaranteed Performance, -40 to +60 deg C Vs= 8.75V, RBIAS= 22 Ohm Parameter Min. Frequency Range Typ. Max. DC - 3.0 Gain @ 25 °C 10 Gain Variation over Temperature Input Return Loss 8 Units GHz 13 16 dB 0.015 0.025 dB/ °C 13 dB Output Return Loss 6 9 dB Reverse Isolation 16 20 dB Output Power for 1dB Compression (P1dB) @ 1 GHz 13 16 dB m Saturated Output Power (Psat) @ 1 GHz 16 19 dB m Output Third Order Intercept (IP3) @ 1 GHz 28 31 dB m Noise Figure 6 dB Supply Current (Icc) 57 mA Note: All specifications refer to a single amplifier. 12 Elizabeth Drive, Chelmsford, MA 01824 1 - 156 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 Gain & Return Loss Gain vs. Temperature 20 20 15 18 14 S1 1 S2 1 0 S2 2 -5 -10 12 10 8 6 -15 +25 C +85 C 4 -20 -40 C 2 -25 0 1 2 3 4 5 6 0 0.5 1 FR E QUE N C Y (G Hz) 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) Input Return Loss vs. Temperature SMT 0 Output Return Loss vs. Temperature 0 O UTP U T R ETU R N L OS S (dB ) 0 IN P U T R ETUR N LO S S (dB ) AMPLIFIERS 5 GA IN (dB ) RE S P O NS E (dB ) 1 16 10 +25 C +85 C -5 -40 C -10 -15 -20 + 25 C + 85 C -5 -40 C -10 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FR E QUE N C Y (G Hz) 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) Reverse Isolation vs. Temperature REV E RS E IS O L A TIO N (dB ) 0 +25 C -5 +85 C -40 C -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E QUE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 157 HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 P1dB vs. Temperature Psat vs. Temperature 24 24 22 22 +25 C +25 C 20 P sat (dB m ) 18 16 14 12 16 14 12 10 10 8 8 6 6 4 4 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FR E QUE N C Y (G Hz) P o ut G ain P AE -8 -6 -4 -2 2 2.5 3 3.5 4 Power Compression @ 2 GHz P ou t (dBm ), G AIN (d B), P A E (% ) 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -1 8 -1 6 -1 4 -1 2 -1 0 1.5 FR E QUE N C Y (G Hz) Power Compression @ 1 GHz P ou t (dBm ), G AIN (d B), P A E (% ) 0 2 4 6 8 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 P o ut G ain P AE -20 -1 8 -1 6 -1 4 -1 2 -1 0 IN PU T P OW E R (dB m) -8 -6 -4 -2 0 2 4 6 8 IN PU T P OW E R (dB m) Output IP3 vs. Temperature 34 32 +25 C +85 C 30 -40 C 28 IP3 (dB m ) SMT +85 C -40 C -40 C 18 P1dB (dB m ) AMPLIFIERS 1 20 +85 C 26 24 22 20 18 16 14 0 0.5 1 1.5 2 2.5 3 3.5 4 FR E Q UE N C Y (G Hz) 12 Elizabeth Drive, Chelmsford, MA 01824 1 - 158 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 Absolute Maximum Ratings Schematic VS (8.75V) R BIAS (22 Ohm) OUT1 PIN 4 C BLOCK IN 1 PIN 5 Input Power (RFin)(Vcc= +5V) +20 dBm Channel Temperature (Tc) 175 °C 1 Continuous Pdiss (Ta= 60 °C) 507 mW (derate 4.41 mW/ °C above 60 °C) Storage Temperature -65 to +150 °C Operating Temperature -55 to +60 °C Note: 1. Select RBIAS to achieve desired Vcc voltage on Pin 1. 2. External blocking capacitors are required on Pins 1, 4, 5, and 8. GND (PINS 2, 3, 5, 6) IN 2 PIN 8 Vcc OUT 2 PIN 1 R BIAS (22 Ohm) VS (8.75V) Outline 1. 2. 3. MATERIAL: A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED. B) LEADFRAME MATERIAL: COPPER ALLOY PLATING : LEAD - TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS). 12 Elizabeth Drive, Chelmsford, MA 01824 4. 5. 6. UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005 (±0.13). CHARACTERS TO BE HELVETICA MEDIUM, APPROX .020 HIGH WHITE INK, LOCATED APPROXIMATELY AS SHOWN. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 159 AMPLIFIERS C BLOCK 8 Volts SMT DC Voltage on Pin 1 Vcc HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 Evaluation PCB for HMC324MS8G SMT AMPLIFIERS 1 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item Description J1 - J4 PC Mount SMA Connector U1 HMC324MS8G PC B* 104221 Evaluation PCB 1.5" x 1.5" *Circuit Board Material: Rogers 4350 12 Elizabeth Drive, Chelmsford, MA 01824 1 - 160 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 V00.1200 NOTES: SMT AMPLIFIERS 1 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 1 - 161