v00.0603 MICROWAVE CORPORATION HMC481MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC481MP86 is an ideal RF/IF gain block & LO or PA driver for: P1dB Output Power: +19 dBm • Cellular / PCS / 3G Output IP3: +33 dBm • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os • CATV, Cable Modem & DBS Single Supply: +6V to +12V Gain: 20 dB • Microwave Radio& Test Equipment Functional Diagram General Description The HMC481MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481MP86 offers 20 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 74 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Parameter Min. Typ. 18.5 15.5 12.5 10.5 9.0 20.0 17.0 14.0 12.0 10.5 Max. dB dB dB dB dB Gain Gain Variation Over Temperature DC - 5.0 GHz 0.008 Input Return Loss DC - 1.0 GHz 1.0 - 5.0 GHz 13 17 dB dB Output Return Loss DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz 20 25 15 dB dB dB Reverse Isolation DC - 5.0 GHz Output Power for 1 dB Compression (P1dB) 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) 0.012 dB/ °C 18 dB 20 18 17 15 12 dBm dBm dBm dBm dBm 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 33 31 29 26 dBm dBm dBm dBm DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz 3.5 4.0 4.5 dB dB dB 74 mA 16 15 14 12 9 Note: Data taken with broadband bias tee on device output. 8 - 254 Units DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC481MP86 v00.0603 MICROWAVE CORPORATION SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Gain vs. Temperature 25 24 20 22 15 20 18 S21 5 16 GAIN (dB) RESPONSE (dB) 10 S11 0 S22 -5 -10 14 12 10 -15 8 -20 6 -25 4 -30 2 -35 0 0 1 2 3 4 5 6 7 8 0 1 FREQUENCY (GHz) 3 4 5 6 Output Return Loss vs. Temperature 0 0 -5 -5 +25 C +85 C -40 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 2 FREQUENCY (GHz) Input Return Loss vs. Temperature -15 -20 -25 +25 C +85 C -40 C -10 -15 -20 -25 -30 -30 -35 0 1 2 3 4 5 0 6 1 FREQUENCY (GHz) 2 3 4 5 6 5 6 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 9 -5 +25 C +85 C -40 C -10 +25 C +85 C -40 C 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 +25 C +85 C -40 C AMPLIFIERS - SMT Broadband Gain & Return Loss -15 -20 7 6 5 4 3 2 -25 1 -30 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 255 HMC481MP86 v00.0603 MICROWAVE CORPORATION P1dB vs. Temperature Psat vs. Temperature 24 24 22 22 20 20 18 18 16 16 Psat (dBm) P1dB (dBm) 14 12 10 14 12 10 8 8 +25 C +85 C 6 4 4 -40 C 2 +25 C +85 C 6 -40 C 2 0 0 0 1 2 3 4 5 0 1 2 FREQUENCY (GHz) 36 34 32 OIP3 (dBm) 30 28 26 24 22 +25 C +85 C -40 C 18 16 0 1 2 4 3 4 5 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain P1dB Psat OIP3 6 7 8 FREQUENCY (GHz) 9 10 Vs (Vdc) Icc (mA) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms 84 82 80 78 76 74 72 70 68 66 64 62 60 58 4.8 +85 C +25 C -40 C 4.9 5 5.1 5.2 5.3 5.4 5.5 5.6 Vcc (Vdc) 8 - 256 5 Gain, Power & OIP3 vs. Supply Voltage for Constant Id= 74 mA @ 850 MHz Output IP3 vs. Temperature 20 3 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 11 12 HMC481MP86 v00.0603 MICROWAVE CORPORATION SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Absolute Maximum Ratings +6.0 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFin)(Vcc = +5.15 Vdc) +17 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 11.6 mW/°C above 85 °C) 0.753 W Thermal Resistance (junction to lead) 86.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 8 AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE “MICRO-X PACKAGE” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 257 MICROWAVE CORPORATION HMC481MP86 v00.0603 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Pin Descriptions Pin Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 RFOUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins must be connected to RF/DC ground. Application Circuit Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 6V 8V 10V 12V RBIAS VALUE 11 Ω 39 Ω 62 Ω 91 Ω RBIAS POWER RATING 1/8 W 1/4 W 1/2 W 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 8 - 258 50 900 1900 2200 2400 3500 5000 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0603 HMC481MP86 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials Item Description J1 - J2 PC Mount SMA Connector J3 - J4 DC Pin C1, C2 Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor, Tantalum R1 Resistor, 1210 Pkg. L1 Inductor, 0603 Pkg. U1 HMC481MP86 PCB* 107087 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 259