v00.0504 MICROWAVE CORPORATION HMC471MS8G SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC471MS8G is a dual RF/IF gain block & LO or PA driver: +20 dBm P1dB Output Power • Cellular / PCS / 3G Output IP3: +34 dBm • Fixed Wireless & WLAN Supply (Vs): +6V to +12V • CATV, Cable Modem & DBS 14.9 mm2 Ultra Small 8 Lead MSOP • Microwave Radio & Test Equipment 20 dB Gain General Description The HMC471MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifier covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifiers combined utilizing external 90° hybrids to create a high linearity driver amplifier. Each amplifier in the HMC471MS8G offers 20 dB of gain, +20dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifier circuit delivers up to +21 dBm P1dB with +36dBm OIP3 for specific application bands through 4 GHz. Functional Diagram Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25° C Parameter Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 4.0 GHz 4.0 - 5.0 GHz Min. Typ. 18.5 15.5 13 10.5 8 21 17.5 15 12.5 10 0.008 12 14 8 13 9 7 5 20 19 17 14 12 10 34 32 27 25 22 3.25 4.0 16 14 11 9 7 Max. 0.012 80 Note: Data taken with broadband bias tee on device output. All specifications refer to a single amplifier. 8 - 314 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com Units dB dB dB dB dB dB/ °C dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB mA HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Gain vs. Temperature 25 24 20 22 8 20 15 +25C +85C -40C 10 16 GAIN (dB) RESPONSE (dB) 18 5 0 -5 14 12 10 8 -10 6 -15 S21 S11 S22 -20 4 2 -25 0 0 1 2 3 4 5 6 7 0 8 1 FREQUENCY (GHz) 4 5 6 Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 3 FREQUENCY (GHz) Input Return Loss vs. Temperature +25C +85C -40C -5 -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 0 1 2 3 4 5 6 0 1 FREQUENCY (GHz) 2 3 4 5 6 5 6 FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 9 +25C +85C -40C -5 +25C +85C -40C 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 2 AMPLIFIERS - SMT Broadband Gain & Return Loss -10 -15 -20 7 6 5 4 3 2 -25 1 -30 0 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) Data shown is of a single amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 315 HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz P1dB vs. Temperature Psat vs. Temperature 22 24 20 22 18 20 16 18 14 Psat (dBm) P1dB (dBm) 12 10 8 16 14 12 10 8 6 4 2 +25C +85C -40C 6 +25C +85C -40C 4 2 0 0 0 1 2 3 4 5 6 0 1 2 FREQUENCY (GHz) 40 OIP3 (dBm) 35 30 25 +25C +85C -40C 15 0 1 2 3 4 5 6 Gain, Power & OIP3 vs. Supply Voltage for Constant Icc= 80 mA @ 850 MHz Output IP3 vs. Temperature 20 3 FREQUENCY (GHz) 4 5 6 FREQUENCY (GHz) Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) AMPLIFIERS - SMT 8 36 34 32 30 28 26 24 22 20 18 Gain P1dB Psat OIP3 16 14 12 6 7 8 9 10 11 12 Vs (Vdc) Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 51 Ohms Cross Channel Isolation 0 90 +85C 88 -5 PATH ISOLATION (dB) 86 Icc (mA) 84 82 +25C 80 78 76 74 -40C 72 INPUT1-OUTPUT2 -15 INPUT2-OUTPUT1 -20 -25 -30 -35 -40 70 68 4.4 -10 -45 4.5 4.6 4.7 4.8 4.9 5 Vcc (Vdc) 5.1 5.2 5.3 5.4 1 2 3 4 5 6 FREQUENCY (GHz) Data shown is of a single amplifier. 8 - 316 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 7 8 HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Input & Output Return Loss * -5 +25C +85C -40C INPUT RETURN LOSS OUTPUT RETURN LOSS -10 -15 -20 -25 -30 -35 -40 1 1.5 2 2.5 3 0 0.5 FREQUENCY (GHz) 1 1.5 2 2.5 3 2.4 2.6 2.4 2.6 FREQUENCY (GHz) Reverse Isolation* Output IP3* 40 0 -5 35 -10 OIP3 (dBm) REVERSE ISOLATION (dB) 8 0 AMPLIFIERS - SMT 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 0.5 RETURN LOSS (dB) GAIN (dB) Gain* -15 -20 -25 30 +25C +85C -40C 25 -30 -35 -40 0 0.5 1 1.5 2 2.5 20 1.4 3 1.6 FREQUENCY (GHz) 2.2 Output Psat* 24 24 22 22 20 20 Psat (dBm) P1dB (dBm) 2 FREQUENCY (GHz) Output P1dB* 18 16 18 16 +25C +85C -40C 14 12 1.4 1.8 1.6 1.8 2 +25C +85C -40C 14 2.2 FREQUENCY (GHz) 2.4 2.6 12 1.4 1.6 1.8 2 2.2 FREQUENCY (GHz) * Measurements shown are of both channels with 1.5 - 2.5 GHz 90° splitter/combiners on input & output (see application circuit for balanced operation). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 317 HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc Collector Bias Current (Icc) 100 mA RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 32.6 mW/°C above 85 °C) 2.12 W Thermal Resistance (junction to ground paddle) 30.7 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 318 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Pin Number Function Description 1 RFIN1 This pin is DC coupled. An off chip DC blocking capacitor is required. 8 RFOUT1 RF output and DC Bias (Vcc1) for the output stage. 2, 3, 6, 7 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 4 RFIN2 This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT2 RF output and DC Bias (Vcc2) for the output stage. Ground Paddle GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 AMPLIFIERS - SMT Pin Descriptions 8 - 319 HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz AMPLIFIERS - SMT 8 Application Circuit for Balanced Operation Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature. Recommended Bias Resistor Values for Icc= 75 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 6V 8V 10V 12V RBIAS VALUE 11 Ω 39 Ω 62 Ω 91 Ω RBIAS POWER RATING 1/4 W 1/2 W 1/2 W 1W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 8 - 320 50 900 1900 2200 2400 3500 5000 L1, L2 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 6.8 nH C4, C5, C9, C10 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC471MS8G v00.0504 MICROWAVE CORPORATION SiGe HBT DUAL CHANNEL GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Materials for Evaluation PCB 109185* Item Description J1 - J4 PC Mount SMA Connector J5 - J8 DC Pins L1, L2 Inductor, 0402 Pkg. C1, C8 2.2 µF Capacitor, Tantalum C2, C7 1000 pF Capacitor, 0402 Pkg. C3, C6 100 pF Capacitor, 0402 Pkg. C4, C5, C9, C10 Capacitor, 0402 Pkg. R1, R2 Resistor, 2010 Pkg. U1 HMC471MS8G PCB** 109162 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 321