HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET (-20V, -4.5A) 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain Source Features Gate • RDS(on)<58mΩ@VGS=-4.5V, ID=-4.2A • RDS(on)<71mΩ@VGS=-2.5V, ID=-2A Drain • Simple Drive Requirement • Small Package Outline • ISurface Mount Device Description The Advanced Power MOSFETS from APEC provide the designer with the best combination of fast switching low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage, applications such as DC/DC converters. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ Continuous Drain Current) -4.5 A ID@TA=70℃ Continuous Drain Current -3.5 A -10 A 1.38 W IDM Drain Current (Pulsed) *1 o PD Total Power Dissipation @TA=25 C Tstg Storage Temperature Range -55 to +150 °C Tj, Operating Junction Temperature Range -55 to +150 °C *1: Repetitive Rating: Pulse width limited by the maximum junction temperation. *2: 1-in2 2oz Cu PCB board H2305N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 2/5 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit -20 - - V • Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient VGS=0V, ID=-250uA Reference to 25℃, ID=-1mA VGS=-4.5V, ID=-2.8A RDS(on) Drain-Source On-State Resistance VGS(th) - 58 VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-1A V/℃ -0.1 71 - mΩ 108 Gate Threshold Voltage VDS=VGS, ID=-250uA Zero Gate Voltage Drain Current (Tj=25oC) VDS=-20V, VGS=0V - -1 uA Zero Gate Voltage Drain Current (Tj=55oC) VDS=-16V, VGS=0V - -10 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=-5V, ID=-2.8A - 9.0 - S VGS=0V, IS=-1.2A - - -1.2 V IDSS -0. 45 V • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H2305N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve 30 30 Ta=25℃ -5V -4V -3V 20 15 -2V 10 10 -1.5V 5 5 0 0 0 2 4 6 VDS,Drain-to-source Voltage(V) Fig 1.Typical Output -1.5V 0 8 70 2 4 6 VDS,Drain-to-source Voltage(V) Fig 2.Typical Output Ch i i 8 80 70 60 Normalized RDS( O 65 RDS(ON)(m Ω -5V -4V -3V 20 -2 V 15 Ta=150℃ 25 ID,Drain current( ID,Drain current( 25 ID=4.2A Ta=25℃ 55 50 60 ID=-4.2A VGS=-4.5V 50 40 30 20 10 45 0 -50 40 1 2 3 4 5 VGS,Gate-to-Source Voltage(V) Fig 3.On-Resistance v.s.Gate 6 -25 0 25 50 75 100 125 Tj,Junction Temperature(℃) Fig 4.Normalized On-Resistance v.s.Junction 150 0.6 10 Tj=150℃ 0.5 Tj=25℃ IS(A) VGS(th)( V 1 0.1 0.4 0.3 0.2 0.1 0.01 0 0 H2305N 0.2 0.4 0.6 0.8 1 1.2 VSD,Source-to-Drain Voltage(V) Fig 5.Forward Characteristic of Reverse 1.4 -50 -25 0 25 50 75 100 125 150 175 Tj,Junction Temperature(℃ ) Fig 6.Gate Threshold Voltage HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 4/5 SOT-23 Dimension DIM A B C D G H J K L S V Marking: A L 2 3 0 5 3 B S 1 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. G V Pb Free Mark Pb-Free: " " (Note) Normal: None Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Pin Style: 1.Gate 2.Source 3.Drain Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 H2305N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat 25 Ramp-down t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H2305N o o 10sec ±1sec o o 10sec ±1sec 245 C ±5 C 260 C ±5 C HSMC Product Specification