HWF1681RA L-Band GaAs Power FET June 2005 V3 Features • High Output Power: P1dB=34.5 dBm (typ.) Outline Dimensions • High Gain: GL=15 Db (typ.) • High Efficiency: PAE =43% (typ.) • High Linearity: IP3=48 dBm (typ.) • Class A or Class AB Operation • Low Cost Description Description The HWF1681RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package. Absolute Maximum Ratings [1] [1] VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 6 mA TCH Channel Temperature 175 C TSTG Storage Temperature -65 to +175 C [2] PT Power Dissipation 12 W RA Package (Ceramic) ° ° Hexawave recommends that the quiescent drain-source operating voltage (VDS) should not exceed 10 Volts. [2] Mounted on an infinite heat sink. Symbol Parameters Conditions Units Min. Typ. Max. mA 900 1200 1600 IDSS Saturated Drain Current VDS=3V, VGS=0V VP Pinch-off Voltage VDS=3V, IDS=60 mA V -3.5 -2.0 -1.5 gm Transconductance VDS=3V, IDS=600 mA mS - 600 - Rth Thermal Resistance Channel to Case °C/W - 9 12 P1dB Output Power @1 dB Gain VDS=10V dBm 33.5 34.5 - GL Linear Power Gain dB 14 15 - PAE Power-added Efficiency (Pout = P1dB) % - 43 - dBm - 48 - IP3 IDS=0.5IDSS [3] Third-order Intercept Point f=2.4 GHz Electrical Specifications at 25° [3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3 Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice. HWF1681RA L-Band GaAs Power FET June 2005 V3 Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS f=2.4GHz 40 50 35 40 30 η add Pout (dBm) 25 Pout 30 15 20 η add Gain 10 η Gain (dB) (%) 20 10 add 5 0 0 5 7 9 11 13 15 17 19 21 23 25 PPinin(dBm) (dBm) Power Derating Curve Total Power Dissipation,PT (W) 16 (25,12.0) 12 8 4 (175,0) 0 0 50 100 150 200 Case Temperature,TC (℃) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. . HWF1681RA L-Band GaAs Power FET June 2005 V3 Typical S-Parameters (Common Source, TA=25°C, VDS=10V, IDS=0.5IDSS) S11 Freq (GHz) S21 S12 Mag. Ang. 23.72 0.369 -150.63 0.022 19.53 0.377 -154.42 93.45 0.022 14.98 0.386 -157.47 6.578 88.25 0.022 11.87 0.396 -159.31 -153.89 5.920 83.67 0.022 10.37 0.403 -160.80 0.940 -158.45 5.356 79.59 0.023 6.36 0.410 -162.18 0.941 -162.39 4.881 75.68 0.023 5.54 0.418 -163.20 0.943 -165.79 4.472 72.11 0.023 3.17 0.428 -164.10 0.946 -168.63 4.126 68.68 0.022 1.24 0.434 -165.09 0.948 -171.41 3.828 65.38 0.022 0.58 0.442 -165.61 0.952 -173.82 3.559 62.26 0.022 -0.90 0.449 -166.70 0.951 -176.22 3.332 59.28 0.022 -1.77 0.457 -167.17 0.953 -178.44 3.125 56.23 0.022 -3.02 0.466 -167.85 0.955 179.47 2.942 53.34 0.022 -3.65 0.474 -168.45 0.954 177.65 2.776 50.53 0.022 -4.27 0.484 -169.16 0.952 175.99 2.633 47.94 0.021 -5.34 0.493 -169.97 0.958 174.15 2.494 45.06 0.021 -5.92 0.502 -170.60 0.953 172.54 2.369 42.62 0.021 -6.59 0.515 -171.20 0.954 170.93 2.254 40.12 0.021 -6.87 0.525 -171.83 0.952 169.33 2.153 37.76 0.020 -6.36 0.533 -172.33 0.949 167.95 2.062 35.43 0.021 -8.04 0.542 -173.11 0.949 166.18 1.977 33.00 0.020 -7.87 0.550 -173.45 0.949 165.04 1.899 30.71 0.020 -7.05 0.559 -174.00 0.946 163.49 1.825 28.44 0.020 -8.59 0.570 -174.61 3.0 0.941 0.941 162.44 160.91 1.760 1.692 26.19 0.020 0.020 -8.24 0.579 0.588 -175.17 4.0 0.914 148.31 1.285 5.0 0.917 134.13 1.073 6.0 0.915 119.10 0.915 7.0 0.900 103.42 0.791 8.0 0.884 91.69 0.730 9.0 0.858 79.20 0.765 10.0 0.796 59.03 0.928 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 Mag. Ang. Mag. Ang. Mag. 0.961 -124.49 9.861 106.06 0.022 0.952 -134.90 8.463 99.11 0.942 -142.12 7.408 0.944 -148.55 0.941 S22 24.02 2.67 -19.80 -42.54 -64.88 -83.19 -99.89 -123.21 0.019 0.021 0.018 0.023 0.028 0.041 0.072 Ang. -8.93 -11.93 -16.48 -12.90 -26.48 -38.21 -34.61 -57.11 0.664 0.701 0.722 0.767 0.764 0.726 0.711 -175.83 175.94 162.90 146.81 132.80 122.26 113.57 99.85 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. .