HW HWF1686RA

HWF1686RA
L-Band GaAs Power FET
June 2005
V3
Outline Dimensions
Features
• Output Power: P1dB=30 dBm (typ.)
• High Gain: GL=16 Db (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=45 dBm (typ.)
• Low Cost
Description
The HWF1686RA is a medium power GaAs
MESFET designed for various RF and Microwave
applications. It is presently offered in a low cost,
surface-mountable ceramic package.
Absolute Maximum Ratings
VDS
Drain to Source Voltage
+15V
VGS
Gate to Source Voltage
-5V
ID
Drain Current
IDSS
IG
Gate Current
2 mA
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65 to +175°C
Power Dissipation
3.5 W
PT
[1]
[1]
[2]
RA Package (Ceramic)
Hexawave recommends that the quiescent
drain-source operating voltage (VDS) should not
exceed 10 Volts.
[2]Mounted on an infinite heat sink.
Electrical Specification at 25°C
Symbol
Parameters
Conditions
Units
Min.
Typ.
Max.
mA
300
400
600
IDSS
Saturated Drain Current
VDS=3V, VGS=0V
VP
Pinch-off Voltage
VDS=3V, IDS=20 mA
V
-3.5
-2.0
-1.5
gm
Transconductance
VDS=3V, IDS=200 mA
mS
-
200
-
Rth
Thermal Resistance
Channel to Case
°C/W
-
30
40
P1dB
Output Power @1dB Gain
VDS=10V
dBm
29.0
30.0
-
GL
Linear Power Gain
dB
15
16
-
PAE
Power-added Efficiency (Pout = P1dB)
%
-
45
-
dBm
-
45
-
IP3
IDS=0.5IDSS
[3]
Third-order Intercept Point
f=2.4 GHz
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Typical Performance at 25°C
Output Power, Efficiency & Gain vs. Input Power
VDS=10V, IDS=0.5IDSS
f=2.4GHz
40
50
η
add
Pout (dBm)
35
40
30
(%)
Pout
20
Gain (dB)
20
15
add
25
η
30
10
10
5
0
0
0
2
4
6
8
10
12
14
16
18
20
Total Power Dissipation,PT (W)
Power Derating Curve
6
Gain
4
(25,3.5)
2
Pin (dBm)
(175,0)
0
0
50
100
150
200
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
.
HWF1686RA
L-Band GaAs Power FET
June 2005 V3
Typical S-Parameters (Common Source, TA=25°C, VDS=10V, IDS=0.5IDSS)
S11
Freq
S21
S12
S22
(GHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
0.5
0.966
-60.600
7.901
137.750
0.014
53.040
0.455
-44.490
0.6
0.954
-71.580
7.488
129.900
0.015
46.780
0.453
-49.140
0.7
0.954
-79.740
7.065
122.830
0.017
40.360
0.444
-55.370
0.8
0.955
-88.330
6.693
116.180
0.018
36.440
0.447
-60.860
0.9
0.951
-95.930
6.327
109.940
0.019
30.700
0.450
-66.130
1.0
0.943
-102.980
5.953
103.930
0.020
26.080
0.454
-71.560
1.1
0.943
-109.520
5.612
98.390
0.021
21.660
0.457
-76.340
1.2
0.943
-115.520
5.283
92.970
0.021
17.640
0.465
-81.450
1.3
0.947
-120.920
4.979
88.080
0.021
14.800
0.468
-85.610
1.4
0.947
-125.900
4.700
83.310
0.022
10.930
0.478
-89.680
1.5
0.949
-130.650
4.434
78.720
0.022
7.860
0.485
-93.630
1.6
0.946
-134.810
4.199
74.510
0.022
4.280
0.494
-97.440
1.7
0.949
-139.040
3.970
70.220
0.021
2.480
0.502
-101.200
1.8
0.950
-142.830
3.771
66.290
0.021
-0.240
0.512
-104.460
1.9
0.949
-146.280
3.579
62.310
0.021
-2.920
0.524
-107.740
2.0
0.948
-149.330
3.402
59.030
0.021
-4.520
0.533
-110.660
2.1
0.951
-152.720
3.245
55.200
0.020
-6.500
0.545
-113.700
2.2
0.947
-155.590
3.081
51.910
0.020
-7.550
0.558
-116.610
2.3
0.946
-158.550
2.942
48.650
0.020
-10.380
0.569
-119.360
2.4
0.944
-161.160
2.811
45.510
0.020
-13.150
0.579
-121.760
2.5
0.940
-163.570
2.691
42.540
0.019
-13.840
0.591
-124.120
2.6
0.939
-166.360
2.577
39.490
0.019
-15.830
0.601
-126.170
2.7
0.940
-168.460
2.473
36.680
0.019
-14.660
0.613
-128.150
2.8
0.936
-170.910
2.374
33.920
0.018
-17.220
0.625
-130.160
2.9
0.932
-172.740
2.290
31.330
0.018
-20.380
0.636
-131.900
3.0
0.931
-175.220
2.198
28.650
0.018
-20.140
0.646
-133.870
4.0
0.900
166.850
1.664
5.030
0.016
-31.630
0.733
-148.980
5.0
0.897
148.860
1.431
-18.490
0.016
-38.100
0.774
-164.480
6.0
0.882
130.020
1.301
-43.500
0.008
-46.420
0.792
178.130
7.0
0.846
109.390
1.206
-69.890
0.015
-52.210
0.837
160.780
8.0
0.781
91.190
1.210
-93.950
0.022
-71.340
0.841
148.940
9.0
0.626
65.480
1.414
-121.200
0.026
-78.610
0.833
141.520
10.0
0.265
-11.550
1.774
-164.010
0.051
-114.740
0.839
129.890
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
.