6MBP75RJ120 1200V / 75A 6 in one-package IGBT IPM R-series 1200V class Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC V CC Vin Iin VALM IALM Tj Topr Tstg Viso 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - 900 1000 800 1200 75 150 75 500 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W V V mA V mA °C °C °C V N·m N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.73/(75 x 3.0) x 100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 6MBP75RJ120 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Turn-on time Turn-off time Reverse recovery time Symbol ICES VCE(sat) VF ton toff trr Condition Min. Typ. Max. Unit 1.2 - 1.9 2.3 - 1.0 2.6 3.0 3.6 0.3 mA V VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VDC=600V,Tj=125°C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 V µs Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Limiting Resistor for Alarm RALM Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. Unit 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH TcOH Condition Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. Typ. Max. 113 150 10 - 12 - 20 - 125 110 VDC=0V, IC=0A CaseTemperature Unit - 11.0 0.2 20 0.5 12.5 - Min. - Typ. 0.05 Max. 0.25 0.73 Unit °C/W °C/W - °C/W Min. Typ. Max. Unit TcH V UV VH Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *8 Inverter IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) *8 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 800 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 450 Max. - Unit g Interval 20s, 10 times Judge : no over-current, no miss operating Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight A µs µs °C °C °C °C V V 6MBP75RJ120 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU SW1 P IPM DC 15V SW2 Earth GND GND N Ic AC200V V Vcc VinX DC 300V U GNDU 20k + + Vin HCPL 4504 CT L + W Figure 6. Switching Characteristics Test Circuit Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 6MBP75RJ120 IGBT-IPM Block diagram P VccU 4 VinU 3 Pre - Driver ALMU 2 RALM 1.5k Vz GNDU 1 VccV 8 VinV 7 U Pre- Driver ALMV 6 RALM 1.5k Vz GNDV 5 VccW 12 VinW 11 ALMW 10 V Pre- Driver RALM 1.5k Vz GNDW 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ Pre-drivers include following functions 1.Amplifier for driver 18 Pre- Driver Vz NC VinDB 2.Short circuit protection 3.Under voltage lockout circuit B 4.Over current protection 5.IGBT chip over heating protection 15 N ALM Ov er heating protection circuit 19 RALM 1.5k Outline drawings, mm 13.8 _0.3 + 109 _1 + 95 _0 . 3 + 66.44 3.22 +_ 0 . 3 10 10 6 +_ 0 . 1 5 _0.2 + 10 _0.2 + 6 +_ 0 . 1 5 12 _ 0 . 25 + 4- O /5 2 +_ 0 . 1 2 +_ 0 . 3 6 +_ 0 . 1 5 _0 . 2 + 1 10 P 20 +_ 1 +_ 0 . 3 88 74 20 B N U V 0.5 17 W 0.5 24 26 26 19- 0.5 2- O / 2.5 9 +0 . 6 31 - 0 . 3 +1 . 0 -0.3 22 17 17 +1 . 0 -0.2 8 22 +1 . 0 -0.3 12.5 7 6 - M5 Mass : 450g 6MBP75RJ120 IGBT-IPM Characteristics Control circuit characteristics (Respresentative) Input signal threshold voltage vs. P ower supply voltage Power supply curr ent vs. Switching fr eque ncy Tj=100 °C T j= 25 °C Tj= 125°C 50 2.5 V cc = 17V P- side V cc = 15V V cc = 13V 30 20 V cc = 17V V cc = 15V 10 2 : V in(on),V in(of f) ( V) 40 Inp ut signa l t hre shold vo lta ge Pow er supp ly cur rent : Icc ( mA) N-side } Vin(off) 1.5 } Vin(on) 1 0.5 V cc = 13V 0 0 0 5 10 15 20 25 12 13 14 15 16 17 18 Po we r s up ply volta ge : Vc c ( V) Sw itc hing f reque nc y : fs w (kHz) U nder voltage vs. J unction tempe ra tur e U nde r voltage hysterisis vs. Jnction tempe ra tur e 14 1 Un der vo ltage hysterisis : VH (V) Unde r volt ag e : VUVT ( V) 12 10 8 6 4 0 .8 0 .6 0 .4 0 .2 2 0 20 40 60 80 1 00 120 0 1 40 20 40 60 80 1 00 120 1 40 Junc tio n tem pe rat ure : Tj (°C) Junction temperature : Tj (°C) Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc Alarm hold time vs. P ower supply voltage 2 00 2 .5 Tj= 125° C 2 Tj= 25°C 1 .5 1 0 .5 0 TjO H O H hys terisis : Tc H, TjH (° C) Over he ating pr ote ction : T cO H,TjOH (° C) Ala rm hold time : t AL M (mSe c) 3 1 50 T cO H 1 00 50 T cH,TjH 0 12 13 14 15 16 Po we r s up ply vo lta ge : Vc c ( V) 17 18 12 13 14 15 16 Po w er supply volt age : Vc c (V) 17 18 6MBP75RJ120 IGBT-IPM Main circuit characteristics (Respresentative) C ollector curr ent vs. Collector-E mitte r voltage Tj=2 5° C( C hip) 1 20 1 20 V cc = 15V Vcc= 17 V 1 00 80 60 40 60 40 20 0 0 0 0 .5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo ltage : V ce ( V) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C( C hip) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C ( Terminal) 1 20 1 20 Vcc= 15 V Vcc= 15 V Vcc= 17 V V cc = 17V Vcc= 13 V 1 00 Co lle cto r Cur re nt : Ic ( A) 1 00 Co lle cto r Curre nt : Ic ( A) V cc= 13 V 80 20 80 60 40 V cc = 13V 80 60 40 20 20 0 0 0 0 .5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 C olle ct or- Emitt er vo lta ge : V ce ( V) C ollect or -Emit ter vo lta ge : V ce ( V) Fo rwar d curre nt vs . Fo rwar d voltage (C hip) Fo rwar d curre nt vs . Fo rwar d voltage ( Terminal) 1 20 3 1 20 1 25 °C 25°C 1 25 °C 25° C 1 00 F or wa rd Current : I f (A) 1 00 Forw ard Current : If (A) V cc = 15V V cc = 17V V cc = 13V Co lle cto r Cur re nt : Ic ( A) 1 00 Co lle cto r Cur rent : Ic (A) C ollector curr ent vs. Collector-E mitte r voltage T j=2 5° C( Terminal) 80 60 40 80 60 40 20 20 0 0 0 0 .5 1 1.5 2 F orw a rd vo ltag e : V f ( V) 2.5 3 0 0 .5 1 1.5 2 F orw a rd vo ltag e : V f ( V) 2.5 3 6MBP75RJ120 IGBT-IPM Switc hing L os s vs. C ollec to r C ur re nt E dc =600V ,Vcc =1 5V,Tj=12 5 ° C Switc hing Los s vs. C ollec tor C ur re nt Edc=6 00 V,Vcc=15V ,Tj=25 °C 35 Sw it ching loss : E on,Eoff, Er r ( mJ /c ycle) S wit ching lo ss : E on,E off,Er r (mJ/c yc le) 35 30 25 20 E on 15 Eoff 10 5 Eon 30 25 20 15 Eo ff 10 E rr 5 E rr 0 0 0 20 40 60 80 100 0 1 20 20 60 80 100 Reversed bias ed safe operating area Vcc=15V,Tj 125 ° C Transient thermal resistance 1 T hermal res istance : Rth(j-c) (°C/W ) 105 0 90 0 75 0 60 0 S CS O A (non-repetitive pulse) 45 0 1 20 Colle ctor cur rent : Ic (A) Collector curre nt : I c (A) C ollector cu rrent : Ic (A) 40 30 0 15 0 FW D IG BT 0.1 RBS O A (R e petit ive pulse) 0 0. 01 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 0 .001 0.01 C ollector-E m itte r volta ge : V ce (V) Power der ating fo r IGBT (per device) 1 Power derating for FW D (per device) 2 00 Collec ter P ow er Dissipa tio n : Pc (W ) 6 00 Co llec te r P ow er Diss ipa tio n : Pc (W ) 0 .1 P ulse width :P w (sec) 5 00 4 00 3 00 2 00 1 00 1 75 1 50 1 25 1 00 75 50 25 0 0 0 20 40 60 80 1 00 1 20 Ca se Temper ature : Tc (°C) 140 1 60 0 20 40 60 80 1 00 1 20 Ca se Temper ature : Tc (°C) 140 1 60 6MBP75RJ120 IGBT-IPM S witching time vs . C ollec to r c ur re nt Edc=600V,Vcc=15V,Tj=25 °C S witching time vs . C ollec to r c ur re nt E dc =600V ,V cc =1 5V,Tj=12 5 ° C 1 00 00 to ff Sw itching tim e : to n, tof f,tf (nSe c) Sw itching time : ton,toff,tf (nSec) 1 00 00 ton 10 00 tf 1 00 t off t on 10 00 tf 10 1 00 0 20 40 60 80 100 1 20 C ollec tor curre nt : I c ( A) Reve rs e r ecovery curre nt : I rr(A) Re ve rse r ecove ry tim e : t rr(nSe c) 10 00 trr125°C trr 25 °C 1 00 Irr125° C Irr25 °C 10 20 40 60 80 For ward current : I F( A) 20 40 60 80 C ollec tor curre nt : I c ( A) Reverse reco ve ry char acte ris tic s trr,Irr vs. IF 0 0 100 1 20 100 1 20