FUJI 7MBP75RJ120

7MBP75RJ120
1200V / 75A 7 in one-package
IGBT IPM R-series 1200V class
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs.
· Low power loss and soft switching.
· High performance and high reliability IGBT with overheating protection.
· Both P-side and N-side alarm output available.
· Higher reliability because of a big decrease in number of parts in
built-in control circuit.
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Bus voltage
DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current
Brake
Inverter
DC
1ms
Duty=76.1% *2
Collector power dissipation One transistor *3
Collector current
DC
1ms
Forward Current of Diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Terminal (M5)
Mounting (M5)
Symbol
Rating
Min.
Max.
VDC
VDC(surge)
V SC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
V CC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Viso
0
0
200
0
-0.5
-0.5
-0.5
-20
-40
-
900
1000
800
1200
75
150
75
500
25
50
25
198
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2500
3.5
3.5
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
V
N·m
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB.
*2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.73(75x3.0)x100=76.1%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
7MBP75RJ120
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Inverter
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Brake
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
Turn-on time
Turn-off time
Reverse recovery time
Symbol
ICES
VCE(sat)
Condition
ICES
VCE(sat)
VF
VCE=1200V Vin terminal open.
Ic=75A
Terminal
Chip
-Ic=75A
Terminal
Chip
VCE=1200V Vin terminal open.
Ic=25A
Terminal
-Ic=25A
Terminal
ton
toff
trr
VDC=600V,Tj=125°C
IC=75A Fig.1, Fig.6
VDC=600V, IF=75A Fig.1, Fig.6
VF
Min.
Typ.
1.2
-
-
Max.
Unit
1.0
2.6
3.0
1.0
2.6
3.3
3.6
0.3
mA
V
V
mA
V
µs
Control circuit
Item
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
Input zener voltage
Alarm signal hold time
VZ
tALM
Limiting Resistor for Alarm
RALM
ICCN
Vin(th)
Condition
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Min.
Typ.
Max.
Unit
18
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
1.1
2.0
4.0
1425
1500
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Over Heating Protection
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
IOC
tDOC
tSC
TjOH
TjH
TcOH
Condition
Min.
Typ.
113
38
150
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
10
-
-
20
-
110
VDC=0V, IC=0A
CaseTemperature
-
TcH
V UV
VH
20
0.5
11.0
0.2
Max.
12
-
Unit
-
125
°C
°C
-
°C
V
V
12.5
-
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance *8
Inverter
Brake
IGBT
FWD
IGBT
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
Typ.
0.05
Min.
Typ.
Max.
0.25
0.73
0.63
Unit
°C/W
°C/W
°C/W
Max.
Unit
-
*8 : (For 1 device, Case is under the device)
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0
-
-
kV
±5.0
-
-
kV
Symbol
V DC
V CC
-
Min.
13.5
2.5
Typ.
15.0
-
Max.
800
16.5
3.0
Unit
V
V
Nm
Symbol
Wt
Min.
-
Typ.
450
Max.
-
Unit
g
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Weight
Item
Weight
A
A
µs
µs
°C
7MBP75RJ120
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
)
on
on
Gate On
Vge (Inside IPM )
Fault (Inside IPM
off
off
/Vin
Gate Off
normal
alarm
/ALM
tALM > Max.
1
tALM >
t ALM 2ms(typ.)
3
Max.
2
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic
Ic
Ic
I ALM
I ALM
I ALM
Figure.4 Definition of tsc
Vcc
PP
IPM
IPM
20 k
DC
15V
VccU
20k
DC
15V
VinU
SW1
P
IPM
DC
15V
SW2
Earth
GND
GND
N
Ic
AC200V
V
Vcc
VinX
DC
300V
U
GNDU
20k
+
+
Vin
HCPL
4504
CT
L
+
W
Figure 6. Switching Characteristics Test Circuit
Icc
A
4700p
N
Cooling
Fin
Vcc
P
Noise
DC
15V
IPM
U
Vin
V
P.G
+8V
fsw
W
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP75RJ120
IGBT-IPM
Block diagram
P
VccU
4
VinU
3
Pre- Driver
ALMU 2
RALM 1.5k
Vz
GNDU 1
VccV
8
VinV
7
U
Pre - Driver
ALMV 6
RALM 1.5k
Vz
GNDV 5
VccW
12
VinW
11
ALMW
10
V
Pre - Driver
RALM 1.5k
Vz
GNDW 9
Vcc
14
VinX
16
W
Pre - Driver
Vz
GND
VinY
13
17
Pre - Driver
Vz
VinZ
Pre-drivers include following functions
18
1.Amplifier for driver
2.Short circuit protection
Pre - Driver
Vz
B
VinDB
15
ALM
19
3.Under voltage lockout circuit
4.Over current protection
Pre - Driver
RALM 1.5k
5.IGBT chip over heating protection
Vz
N
Over heating protection
circuit
Outline drawings, mm
13.8
_0.3
+
109
_1
+
95
_0 . 3
+
66.44
3.22 +_ 0 . 3
10
10
6 +_ 0 . 1 5
_0.2
+
10
_0.2
+
6 +_ 0 . 1 5
12
_ 0 . 25
+
4- O
/5
2 +_ 0 . 1
2
+_ 0 . 3
6 +_ 0 . 1 5
_0 . 2
+
1
10
P
20
+_ 1
+_ 0 . 3
88
74
20
B
N
U
V
0.5
17
W
0.5
24
26
26
19- 0.5
2- O
/ 2.5
9
+0 . 6
31 - 0 . 3
+1 . 0
-0.3
22
17
17
+1 . 0
-0.2
8
22
+1 . 0
-0.3
12.5
7
6 - M5
Mass : 450g
IGBT-IPM
7MBP75RJ120
Characteristics
Control circuit characteristics (Respresentative)
Input signal threshold voltage
vs. P ower supply voltage
Power supply curr ent vs. Switching fr eque ncy
Tj=100 °C
T j= 25 °C
Tj= 125°C
50
2.5
P- side
V cc = 17V
V cc = 15V
V cc = 13V
30
20
V cc = 17V
V cc = 15V
10
2
: V in(on),V in(of f) ( V)
40
Inp ut signa l t hre shold vo lta ge
Pow er supp ly cur rent : Icc ( mA)
N-side
} Vin(off)
1.5
} Vin(on)
1
0.5
V cc = 13V
0
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Po we r s up ply volta ge : Vc c ( V)
Sw itc hing f reque nc y : fs w (kHz)
U nder voltage vs. J unction tempe ra tur e
U nde r voltage hysterisis vs. Jnction tempe ra tur e
14
1
Un der vo ltage hysterisis : VH (V)
Unde r volt ag e : VUVT ( V)
12
10
8
6
4
0 .8
0 .6
0 .4
0 .2
2
0
20
40
60
80
1 00
120
0
1 40
20
40
60
80
1 00
120
1 40
Junc tio n tem pe rat ure : Tj (°C)
Junction temperature : Tj (°C)
Over heating c haracteris tic s
TcOH ,TjOH ,TcH ,TjH vs. Vcc
Alarm hold time vs. P ower supply voltage
2 00
2 .5
Tj= 125° C
2
Tj= 25°C
1 .5
1
0 .5
0
TjO H
O H hys terisis : Tc H, TjH (° C)
Over he ating pr ote ction : T cO H,TjOH (° C)
Ala rm hold time : t AL M (mSe c)
3
1 50
T cO H
1 00
50
T cH,TjH
0
12
13
14
15
16
Po we r s up ply vo lta ge : Vc c ( V)
17
18
12
13
14
15
16
Po w er supply volt age : Vc c (V)
17
18
7MBP75RJ120
IGBT-IPM
Main circuit characteristics (Respresentative)
C ollector curr ent vs. Collector-E mitte r voltage
Tj=2 5° C( C hip)
1 20
1 20
V cc = 15V
Vcc= 17 V
1 00
80
60
40
60
40
20
0
0
0
0 .5
1
1.5
2
2.5
3
0
0 .5
1
1.5
2
2.5
3
C olle ct or- Emitt er vo lta ge : V ce ( V)
C olle ct or- Emitt er vo ltage : V ce ( V)
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=12 5° C( C hip)
Co lle ctor curr ent vs. Colle ctor -E mitte r voltage
Tj=12 5° C ( Terminal)
1 20
1 20
Vcc= 15V
Vcc= 15 V
Vcc= 17 V
V cc = 17V
Vcc= 13 V
1 00
Co lle cto r Cur re nt : Ic ( A)
1 00
Co lle cto r Curre nt : Ic ( A)
V cc= 13 V
80
20
80
60
40
V cc = 13V
80
60
40
20
20
0
0
0
0 .5
1
1.5
2
2.5
3
0
0 .5
1
1.5
2
2.5
C olle ct or- Emitt er vo lta ge : V ce ( V)
C ollect or -Emit ter vo lta ge : V ce ( V)
Fo rwar d curre nt vs . Fo rwar d voltage
(C hip)
Fo rwar d curre nt vs . Fo rwar d voltage
( Terminal)
1 20
3
1 20
1 25 °C
25°C
1 25 °C
25° C
1 00
F or wa rd Current : I f (A)
1 00
Forw ard Current : If (A)
V cc = 15V
V cc = 17V
V cc = 13V
Co lle cto r Cur re nt : Ic ( A)
1 00
Co lle cto r Cur rent : Ic (A)
C ollector curr ent vs. Collector-E mitte r voltage
T j=2 5° C( Terminal)
80
60
40
80
60
40
20
20
0
0
0
0 .5
1
1.5
2
F orw a rd vo ltag e : V f ( V)
2.5
3
0
0 .5
1
1.5
2
F orw a rd vo ltag e : V f ( V)
2.5
3
7MBP75RJ120
IGBT-IPM
Switc hing L os s vs. C ollec to r C ur re nt
E dc =600V ,Vcc =1 5V,Tj=12 5 ° C
Switc hing Los s vs. C ollec tor C ur re nt
Edc=6 00 V,Vcc=15V ,Tj=25 °C
35
Sw it ching loss : E on,Eoff, Er r ( mJ /c ycle)
S wit ching lo ss : E on,E off,Er r (mJ/c yc le)
35
30
25
20
E on
15
Eoff
10
5
Eon
30
25
20
15
Eo ff
10
E rr
5
E rr
0
0
0
20
40
60
80
100
0
1 20
20
Collector curre nt : I c (A)
Reversed bias ed safe operating area
Vc c=15V,Tj 125 ° C
60
80
100
1
T hermal res istance : Rth(j-c) (°C/W )
90 0
75 0
60 0
S CS O A
(non-repetitive pulse)
45 0
1 20
Transient thermal resistance
105 0
C ollector cu rrent : Ic (A)
40
Colle ctor cur rent : Ic (A)
30 0
15 0
FW D
IG BT
0.1
R BS O A
(R e petitive pulse)
0
0. 01
0
20 0
40 0
600
80 0
1 00 0
1 20 0
140 0
0 .001
0.01
C ollector-E m itte r volta ge : V ce (V)
1
P ulse width :P w (sec)
Power der ating fo r IGBT
(per device)
Power derating for FW D
(per device)
2 00
Collec ter P ow er Dissipa tio n : Pc (W )
6 00
Co llec te r P ow er Diss ipa tio n : Pc (W )
0 .1
5 00
4 00
3 00
2 00
1 00
1 75
1 50
1 25
1 00
75
50
25
0
0
0
20
40
60
80
1 00
1 20
Ca se Temper ature : Tc (°C)
140
1 60
0
20
40
60
80
1 00
1 20
Ca se Temper ature : Tc (°C)
140
1 60
7MBP75RJ120
IGBT-IPM
S witching time vs . C ollec to r c ur re nt
Edc=600V,Vcc=15V,Tj=25 °C
S witching time vs . C ollec to r c ur re nt
E dc =600V ,V cc =1 5V,Tj=12 5 ° C
1 00 00
to ff
Sw itching tim e : to n, tof f,tf (nSe c)
Sw itching time : ton,toff,tf (nSec)
1 00 00
ton
10 00
tf
1 00
t off
t on
10 00
tf
10
1 00
0
20
40
60
80
100
1 20
C ollec tor curre nt : I c ( A)
Reve rs e r ecovery curre nt : I rr(A)
Re ve rse r ecove ry tim e : t rr(nSe c)
10 00
trr125°C
trr 25 °C
1 00
Irr125° C
Irr25 °C
10
20
40
60
80
For ward current : I F( A)
20
40
60
80
C ollec tor curre nt : I c ( A)
Reverse reco ve ry char acte ris tic s
trr,Irr vs. IF
0
0
100
1 20
100
1 20
7MBP75RJ120
IGBT-IPM
Dynamic Brake Characteristics (Representative)
C ollector current vs. Collector-E mitte r voltage
Tj=2 5°C ( Terminal)
40
C o lle ctor current vs. Colle ctor-Emitter voltage
Tj=12 5°C( T ermina l)
40
Vcc= 15 V
Vcc= 15 V
Vcc= 17 V
Vcc= 17 V
35
35
Colle ct or Curre nt : I c ( A)
Co llecto r Cur rent : Ic (A)
V cc = 13V
30
25
20
15
30
Vcc= 13V
25
20
15
10
10
5
5
0
0
0
0.5
1
1.5
2
2.5
3
0
0 .5
1
1.5
2
2.5
C olle ct or- Emitt er voltage : V ce (V)
C olle ct or- Emitt er vo lta ge : V ce ( V)
Tran sien t the rm a l res is ta nc e
Revers ed bias ed safe operating area
V cc=1 5V,Tj
125 °C
1
3
35 0
30 0
C ollector cu rren t : Ic (A)
T hermal resistance : R th(j-c) (°C/W )
IG B T
0 .1
20 0
S C S OA
(no n-re peti tive pu ls e)
15 0
10 0
50
RBSOA
(R e peti tive pu ls e)
0.01
0
0 .00 1
0.01
0 .1
1
P ulse wid th :P w (se c)
2 50
2 00
1 50
1 00
50
0
0
20
40
60
80
1 00
0
20 0
40 0
600
800
1 000
1 20 0
C ollector-E m itte r volta ge : V ce (V)
Power dera ting fo r IGB T
(per device)
Co llecte r P ow er Diss ipa tio n : Pc ( W)
25 0
1 20
Case Temper ature : Tc (°C)
140
1 60
140 0