7MBP75RJ120 1200V / 75A 7 in one-package IGBT IPM R-series 1200V class Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection. · Both P-side and N-side alarm output available. · Higher reliability because of a big decrease in number of parts in built-in control circuit. Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Brake Inverter DC 1ms Duty=76.1% *2 Collector power dissipation One transistor *3 Collector current DC 1ms Forward Current of Diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Terminal (M5) Mounting (M5) Symbol Rating Min. Max. VDC VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Viso 0 0 200 0 -0.5 -0.5 -0.5 -20 -40 - 900 1000 800 1200 75 150 75 500 25 50 25 198 20 Vcc+0.5 3 Vcc 20 150 100 125 AC2500 3.5 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C V N·m N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB. *2 : 125°C/FRD Rth(j-c)/(Ic x VF Max.)=125/0.73(75x3.0)x100=76.1% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.25=500W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15,16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. 7MBP75RJ120 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Brake Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Symbol ICES VCE(sat) Condition ICES VCE(sat) VF VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VCE=1200V Vin terminal open. Ic=25A Terminal -Ic=25A Terminal ton toff trr VDC=600V,Tj=125°C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 VF Min. Typ. 1.2 - - Max. Unit 1.0 2.6 3.0 1.0 2.6 3.3 3.6 0.3 mA V V mA V µs Control circuit Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Symbol Iccp Input zener voltage Alarm signal hold time VZ tALM Limiting Resistor for Alarm RALM ICCN Vin(th) Condition Switching Trequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Min. Typ. Max. Unit 18 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Over Heating Protection Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH TjH TcOH Condition Min. Typ. 113 38 150 Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips 10 - - 20 - 110 VDC=0V, IC=0A CaseTemperature - TcH V UV VH 20 0.5 11.0 0.2 Max. 12 - Unit - 125 °C °C - °C V V 12.5 - Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *8 Inverter Brake IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Min. Typ. Max. 0.25 0.73 0.63 Unit °C/W °C/W °C/W Max. Unit - *8 : (For 1 device, Case is under the device) Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 800 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 450 Max. - Unit g Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight A A µs µs °C 7MBP75RJ120 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU SW1 P IPM DC 15V SW2 Earth GND GND N Ic AC200V V Vcc VinX DC 300V U GNDU 20k + + Vin HCPL 4504 CT L + W Figure 6. Switching Characteristics Test Circuit Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP75RJ120 IGBT-IPM Block diagram P VccU 4 VinU 3 Pre- Driver ALMU 2 RALM 1.5k Vz GNDU 1 VccV 8 VinV 7 U Pre - Driver ALMV 6 RALM 1.5k Vz GNDV 5 VccW 12 VinW 11 ALMW 10 V Pre - Driver RALM 1.5k Vz GNDW 9 Vcc 14 VinX 16 W Pre - Driver Vz GND VinY 13 17 Pre - Driver Vz VinZ Pre-drivers include following functions 18 1.Amplifier for driver 2.Short circuit protection Pre - Driver Vz B VinDB 15 ALM 19 3.Under voltage lockout circuit 4.Over current protection Pre - Driver RALM 1.5k 5.IGBT chip over heating protection Vz N Over heating protection circuit Outline drawings, mm 13.8 _0.3 + 109 _1 + 95 _0 . 3 + 66.44 3.22 +_ 0 . 3 10 10 6 +_ 0 . 1 5 _0.2 + 10 _0.2 + 6 +_ 0 . 1 5 12 _ 0 . 25 + 4- O /5 2 +_ 0 . 1 2 +_ 0 . 3 6 +_ 0 . 1 5 _0 . 2 + 1 10 P 20 +_ 1 +_ 0 . 3 88 74 20 B N U V 0.5 17 W 0.5 24 26 26 19- 0.5 2- O / 2.5 9 +0 . 6 31 - 0 . 3 +1 . 0 -0.3 22 17 17 +1 . 0 -0.2 8 22 +1 . 0 -0.3 12.5 7 6 - M5 Mass : 450g IGBT-IPM 7MBP75RJ120 Characteristics Control circuit characteristics (Respresentative) Input signal threshold voltage vs. P ower supply voltage Power supply curr ent vs. Switching fr eque ncy Tj=100 °C T j= 25 °C Tj= 125°C 50 2.5 P- side V cc = 17V V cc = 15V V cc = 13V 30 20 V cc = 17V V cc = 15V 10 2 : V in(on),V in(of f) ( V) 40 Inp ut signa l t hre shold vo lta ge Pow er supp ly cur rent : Icc ( mA) N-side } Vin(off) 1.5 } Vin(on) 1 0.5 V cc = 13V 0 0 0 5 10 15 20 25 12 13 14 15 16 17 18 Po we r s up ply volta ge : Vc c ( V) Sw itc hing f reque nc y : fs w (kHz) U nder voltage vs. J unction tempe ra tur e U nde r voltage hysterisis vs. Jnction tempe ra tur e 14 1 Un der vo ltage hysterisis : VH (V) Unde r volt ag e : VUVT ( V) 12 10 8 6 4 0 .8 0 .6 0 .4 0 .2 2 0 20 40 60 80 1 00 120 0 1 40 20 40 60 80 1 00 120 1 40 Junc tio n tem pe rat ure : Tj (°C) Junction temperature : Tj (°C) Over heating c haracteris tic s TcOH ,TjOH ,TcH ,TjH vs. Vcc Alarm hold time vs. P ower supply voltage 2 00 2 .5 Tj= 125° C 2 Tj= 25°C 1 .5 1 0 .5 0 TjO H O H hys terisis : Tc H, TjH (° C) Over he ating pr ote ction : T cO H,TjOH (° C) Ala rm hold time : t AL M (mSe c) 3 1 50 T cO H 1 00 50 T cH,TjH 0 12 13 14 15 16 Po we r s up ply vo lta ge : Vc c ( V) 17 18 12 13 14 15 16 Po w er supply volt age : Vc c (V) 17 18 7MBP75RJ120 IGBT-IPM Main circuit characteristics (Respresentative) C ollector curr ent vs. Collector-E mitte r voltage Tj=2 5° C( C hip) 1 20 1 20 V cc = 15V Vcc= 17 V 1 00 80 60 40 60 40 20 0 0 0 0 .5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 3 C olle ct or- Emitt er vo lta ge : V ce ( V) C olle ct or- Emitt er vo ltage : V ce ( V) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C( C hip) Co lle ctor curr ent vs. Colle ctor -E mitte r voltage Tj=12 5° C ( Terminal) 1 20 1 20 Vcc= 15V Vcc= 15 V Vcc= 17 V V cc = 17V Vcc= 13 V 1 00 Co lle cto r Cur re nt : Ic ( A) 1 00 Co lle cto r Curre nt : Ic ( A) V cc= 13 V 80 20 80 60 40 V cc = 13V 80 60 40 20 20 0 0 0 0 .5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 C olle ct or- Emitt er vo lta ge : V ce ( V) C ollect or -Emit ter vo lta ge : V ce ( V) Fo rwar d curre nt vs . Fo rwar d voltage (C hip) Fo rwar d curre nt vs . Fo rwar d voltage ( Terminal) 1 20 3 1 20 1 25 °C 25°C 1 25 °C 25° C 1 00 F or wa rd Current : I f (A) 1 00 Forw ard Current : If (A) V cc = 15V V cc = 17V V cc = 13V Co lle cto r Cur re nt : Ic ( A) 1 00 Co lle cto r Cur rent : Ic (A) C ollector curr ent vs. Collector-E mitte r voltage T j=2 5° C( Terminal) 80 60 40 80 60 40 20 20 0 0 0 0 .5 1 1.5 2 F orw a rd vo ltag e : V f ( V) 2.5 3 0 0 .5 1 1.5 2 F orw a rd vo ltag e : V f ( V) 2.5 3 7MBP75RJ120 IGBT-IPM Switc hing L os s vs. C ollec to r C ur re nt E dc =600V ,Vcc =1 5V,Tj=12 5 ° C Switc hing Los s vs. C ollec tor C ur re nt Edc=6 00 V,Vcc=15V ,Tj=25 °C 35 Sw it ching loss : E on,Eoff, Er r ( mJ /c ycle) S wit ching lo ss : E on,E off,Er r (mJ/c yc le) 35 30 25 20 E on 15 Eoff 10 5 Eon 30 25 20 15 Eo ff 10 E rr 5 E rr 0 0 0 20 40 60 80 100 0 1 20 20 Collector curre nt : I c (A) Reversed bias ed safe operating area Vc c=15V,Tj 125 ° C 60 80 100 1 T hermal res istance : Rth(j-c) (°C/W ) 90 0 75 0 60 0 S CS O A (non-repetitive pulse) 45 0 1 20 Transient thermal resistance 105 0 C ollector cu rrent : Ic (A) 40 Colle ctor cur rent : Ic (A) 30 0 15 0 FW D IG BT 0.1 R BS O A (R e petitive pulse) 0 0. 01 0 20 0 40 0 600 80 0 1 00 0 1 20 0 140 0 0 .001 0.01 C ollector-E m itte r volta ge : V ce (V) 1 P ulse width :P w (sec) Power der ating fo r IGBT (per device) Power derating for FW D (per device) 2 00 Collec ter P ow er Dissipa tio n : Pc (W ) 6 00 Co llec te r P ow er Diss ipa tio n : Pc (W ) 0 .1 5 00 4 00 3 00 2 00 1 00 1 75 1 50 1 25 1 00 75 50 25 0 0 0 20 40 60 80 1 00 1 20 Ca se Temper ature : Tc (°C) 140 1 60 0 20 40 60 80 1 00 1 20 Ca se Temper ature : Tc (°C) 140 1 60 7MBP75RJ120 IGBT-IPM S witching time vs . C ollec to r c ur re nt Edc=600V,Vcc=15V,Tj=25 °C S witching time vs . C ollec to r c ur re nt E dc =600V ,V cc =1 5V,Tj=12 5 ° C 1 00 00 to ff Sw itching tim e : to n, tof f,tf (nSe c) Sw itching time : ton,toff,tf (nSec) 1 00 00 ton 10 00 tf 1 00 t off t on 10 00 tf 10 1 00 0 20 40 60 80 100 1 20 C ollec tor curre nt : I c ( A) Reve rs e r ecovery curre nt : I rr(A) Re ve rse r ecove ry tim e : t rr(nSe c) 10 00 trr125°C trr 25 °C 1 00 Irr125° C Irr25 °C 10 20 40 60 80 For ward current : I F( A) 20 40 60 80 C ollec tor curre nt : I c ( A) Reverse reco ve ry char acte ris tic s trr,Irr vs. IF 0 0 100 1 20 100 1 20 7MBP75RJ120 IGBT-IPM Dynamic Brake Characteristics (Representative) C ollector current vs. Collector-E mitte r voltage Tj=2 5°C ( Terminal) 40 C o lle ctor current vs. Colle ctor-Emitter voltage Tj=12 5°C( T ermina l) 40 Vcc= 15 V Vcc= 15 V Vcc= 17 V Vcc= 17 V 35 35 Colle ct or Curre nt : I c ( A) Co llecto r Cur rent : Ic (A) V cc = 13V 30 25 20 15 30 Vcc= 13V 25 20 15 10 10 5 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0 .5 1 1.5 2 2.5 C olle ct or- Emitt er voltage : V ce (V) C olle ct or- Emitt er vo lta ge : V ce ( V) Tran sien t the rm a l res is ta nc e Revers ed bias ed safe operating area V cc=1 5V,Tj 125 °C 1 3 35 0 30 0 C ollector cu rren t : Ic (A) T hermal resistance : R th(j-c) (°C/W ) IG B T 0 .1 20 0 S C S OA (no n-re peti tive pu ls e) 15 0 10 0 50 RBSOA (R e peti tive pu ls e) 0.01 0 0 .00 1 0.01 0 .1 1 P ulse wid th :P w (se c) 2 50 2 00 1 50 1 00 50 0 0 20 40 60 80 1 00 0 20 0 40 0 600 800 1 000 1 20 0 C ollector-E m itte r volta ge : V ce (V) Power dera ting fo r IGB T (per device) Co llecte r P ow er Diss ipa tio n : Pc ( W) 25 0 1 20 Case Temper ature : Tc (°C) 140 1 60 140 0