FUJI 7MBP75RTB060

7MBP75RTB060
600V / 75A 7 in one-package
IPM-R3 series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
Rating
Min.
VDC
DC
VDC(surge)
Surge
Shortoperating V SC
VCES *1
DC
IC
1ms
ICP
Duty=75.0% -IC *2
Collector power dissipation One transistor
PC *3
Collector current
DC
IC
1ms
ICP
Forward Current of Diode
IF
Collector power dissipation One transistor
PC *3
Input voltage of power supply for Pre-Driver
VCC *4
Input signal voltage
Vin *5
Input signal current
Iin
Alarm signal voltage
VALM *6
Alarm signal current
IALM *7
Junction temperature
Tj
Operating case temperature
Top
Storage temperature
Tstg
Isolating voltage (Case-Terminal)
Viso *8
Screw torque
Mounting (M5)
Terminal (M5)
Brake
Inverter
Bus voltage
(between terminal P and N)
Collector-Emitter voltage
Collector current
0
0
200
0
-0.5
-0.5
-0.5
-20
-40
-
Unit
Max.
450
500
400
600
75
150
75
198
50
100
50
198
20
Vcc+0.5
3
Vcc
20
150
100
125
AC2.5
3.5 *9
3.5 *9
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,
N and U or V or W or DB.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=75.0%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
Weight
Item
Weight
*9 : (For 1 device, Case is under the device)
Symbol
Wt
Min.
-
Typ.
450
Max.
-
Unit
g
7MBP75RTB060
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Brake
Inverter
Item
Collector current at off signal input
Collector-Emitter saturation voltage
Symbol
ICES
VCE(sat)
Forward voltage of FWD
VF
Collector current at off signal input
Collector-Emitter saturation voltage
ICES
VCE(sat)
Forward voltage of Diode
VF
Turn-on time
Turn-off time
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
ton
toff
trr
PAV
Condition
Min.
VCE=600V Vin terminal open.
Terminal
Ic=75A
Chip
Terminal
Ic=75A
Chip
VCE=600V Vin terminal open.
Terminal
Ic=50A
Chip
Terminal
-Ic=50A
Chip
VDC=300V,Tj=125°C
IC=75A Fig.1, Fig.6
VDC=300V, IC=75A Fig.1, Fig.6
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Typ.
1.2
40
Max.
2.0
1.6
1.75
1.9
-
Unit
1.0
2.4
2.6
1.0
2.2
3.3
3.6
0.3
-
mA
V
V
mA
V
V
V
µs
mJ
Control circuit
Item
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Alarm signal hold time
VZ
tALM
Limiting resistor for alarm
RALM
Condition
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Min.
Typ.
Max.
18
65
1.00
1.35
1.70
1.25
1.60
1.95
8.0
1.1
2.0
4.0
1425
1500
1575
Unit
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Item
Over Current Protection Level of Inverter circuit
Over Current Protection Level of brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Symbol
IOC
tDOC
tSC
TjOH
TjH
TCOH
TCH
V UV
VH
Condition
Min.
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
surface of IGBT chips
113
75
150
110
11.0
0.2
VDC=0V, Ic=0A, Case temperature
Typ.
Max.
Unit
5
-
8
- 125
12.5
-
A
20
20
0.5
Thermal characteristics( Tc=25°C)
Item
Junction to Case thermal resistance
INV
Brake
IGBT
FWD
IGBT
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
-
Typ.
0.05
Max.
0.63
0.855
0.63
-
Unit
°C/W
°C/W
°C/W
°C/W
Min.
Typ.
Max.
Unit
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Common mode rectangular noise
Common mode lightning surge
Condition
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0
-
-
kV
±5.0
-
-
kV
Min.
13.5
2.5
Typ.
15.0
-
Max.
400
16.5
3.0
Unit
V
V
Nm
Recommendable value
Item
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
Symbol
V DC
V CC
-
A
µs
µs
°C
°C
°C
V
7MBP75RTB060
IGBT-IPM
Vin
on
Vin(th)
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
on
on
Gate on
Gate off
Vge (Inside IPM)
Fault (Inside IPM)
normal
alarm
/ALM
2ms(typ.)
tALM>Max.
tALM>Max.
tALM
Fault : Over-current, Over-heat or Under-voltage
Figure 2. Input / Output Timing Diagram
tsc
Ic
Ic
Ic
IALM
IALM
IALM
Figure. 4 Definition of tsc
P
Vcc
20k
VccU
P
CT
VinU
Ic
Vin
GND
AC200V
+
V
N
Figure 6. Switching Characteristics Test Circuit
Vcc
DC
15V
20k
VinX
W
Icc
4700p
Sw2
GND
DC
300V
4504
U
Sw1
GNDU
L
HCPL-
20k
DC
15V
IPM
+
DC
15V
N
Vcc
Noise
I PM
DC
15V
Earth
Cooling
Fin
P
U
Vin
P.G
+8V fsw
V
W
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP75RTB060
IGBT-IPM
Block diagram
VccU
3
VinU
2
P
Pre-Driver
U
GNDU 1
VccV
6
VinV
5
Pre-Driver
V
GNDV 4
VccW 9
VinW
Pre-Driver
8
W
GNDW 7
Vcc
11
Pre-Driver
VinX 13
GND
10
VinY 14
Pre-Driver
VinZ 15
Pre-Driver
B
VinDB
Pre-Driver
12
N
RALM
ALM 16
Over heating protection
circuit
1.5kΩ
Pre-driver include following functions
1 Amplifier for drive
2 Short circuit protection
3 Under voltage lockout circuit
4 Over current protection
5 IGBT chip over heating protection
Outline drawings, mm
Mass : 450g
7MBP75RTB060
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
Power supply current vs. Switching frequency
N-side
Tc=125°C
········· P-side
Input signal threshold voltage
vs. Power supply voltage
2.5
50
2.0
Input signal threshold voltage
Vin (ON), Vin (OFF), (V)
Power supply current Icc (mA)
60
Tj=25°C
········· Tj=125°C
40
30
20
10
1.5
1.0
0.5
0
0
0
5
10
15
20
25
12
13
Switching frequency fsw (kHz)
14
15
16
17
18
Power supply voltage Vcc (V)
Under voltage hysterisis vs. Junction temperature
Under voltage vs. Junction temperature
14
1.0
Undervoltage hysterisis VH (V)
Under voltage VUVT (V)
12
10
8
6
4
0.8
0.6
0.4
0.2
2
0
0
20
40
60
80
100
120
20
140
40
Alarm hold time vs. Power supply voltage
100
120
140
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
3.0
200
Overheating protection TCOH,TjOH (°C)
OH hysterisis TCH,TjH (°C)
Alarm hold time tALM (msec.)
80
Junction temperature Tj (°C)
Junction temperature Tj (°C)
2.5
2.0
1.5
1.0
0.5
0
12
60
150
100
50
0
13
14
15
16
Power supply voltage Vcc (V)
17
18
12
13
14
15
16
Power supply voltage Vcc (V)
17
18
7MBP75RTB060
IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
80
80
70
70
60
60
Collector current Ic (A)
Collector current Ic (A)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
50
40
30
20
50
40
30
20
10
10
0
0
0
0.5
1
1.5
2
2.5
0
3
80
80
70
70
60
60
Collector current Ic (A)
Collector current Ic (A)
1
1.5
2
2.5
3
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
50
40
30
20
50
40
30
20
10
10
0
0
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
3
150
Forward current IF (A)
150
Forward current IF (A)
0.5
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
100
50
0
100
50
0
0
0.5
1
1.5
Foeward voltage VF (V)
2
2.5
0
0.5
1
1.5
Foeward voltage VF (V)
2
2.5
7MBP75RTB060
IGBT-IPM
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
6
Switching loss Eon,Eoff, Err (mJ/cycle)
Switching loss Eon,Eoff, Err (mJ/cycle)
6
5
4
3
2
1
5
4
3
2
1
0
0
0
20
40
60
0
80
20
40
60
80
Collector current IC (A)
Collector current IC (A)
Reverse biased safe operating area
Vcc=15V, Tj <
=125°C
Transient thermal resistance
Thermal resistance Rth(j-c) (°C/W)
300
Collector current Ic (A)
250
200
150
100
50
0
0
100
200
300
400
500
600
700
1
0.1
0.01
0.001
0.01
Collector-Emitter voltage VCE (V)
Power derating for IGBT (per device)
1
Power derating for FWD (per device)
250
200
Collector power dissipation Pc (W)
Collector power dissipation Pc (W)
0.1
Pulse width Pw (sec.)
200
150
100
50
0
150
100
50
0
0
20
40
60
80
100
120
Case temperature Tc (°C)
140
160
0
20
40
60
80
100
120
Case temperature Tc (°C)
140
160
7MBP75RTB060
IGBT-IPM
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
10000
Switching time ton,toff,tf (nsec.)
Switching time ton,toff,tf (nsec.)
10000
1000
100
100
10
10
20
40
60
80
100
120
Collector current Ic (A)
100
10
1
20
40
60
80
Foeward current IF (A)
20
40
60
80
Collector current Ic (A)
Reverse recovery characteristics
trr, Irr, vs. IF
Reverse recovery current Irr (A)
Reverse recovery time trr (nsec.)
1000
100
120
100
120
7MBP75RTB060
IGBT-IPM
Dynamic brake characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=125°C (Terminal)
80
80
60
60
Collector current Ic (A)
Collector current Ic (A)
Collector current vs. Collector-Emitter voltage
Tj=25°C (Terminal)
40
20
0
40
20
0
0
0.5
1
1.5
2
2.5
3
0
Collector-Emitter voltage VCE (V)
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage VCE (V)
Reverse biased safe operating area
Vcc=15V, Tj <
= 125°C
Transient thermal resistance
200
150
Collector current Ic (A)
Thermal resistance Rth(j-c) (°C/W)
1
0.1
0.01
50
0
0.001
0.01
0.1
1
Power derating for IGBT (per device)
250
200
1 50
100
50
0
0
20
40
60
80
100
0
100
200
300
400
500
600
Collector-Emitter voltage VCE (V)
Pulse width Pw (sec.)
Collector power dissipation Pc (W)
100
120
Case temperature Tc (°C)
140
160
700