TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 DEVICES LEVELS 2N7373 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 5.0 Adc PT 4.0 58 W Tj , Tstg -65 to +200 °C RθJC 3 °C/W Collector Current Total Power Dissipation @ TA = +25°C (1) @ TC = +25°C (2) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case 1) 2) Derate linearly 22.8mW/°C for TA > 25°C Derate linearly 331mW/°C for TC > 25°C PIN 1 = BASE PIN 2 = COLLECTOR PIN 3 = EMITTER ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 80 TO-254AA Max. Unit SEE FIGURE 1 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Vdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc ICES1 ICES2 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 µAdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.5Vdc IEBO1 IEBO2 1.0 1.0 µAdc mAdc T4-LDS-0046 Rev. 3 (091477) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERISTICS Symbol Min. Max. hFE1 hFE2 hFE3 50 70 40 --200 --- Unit (3) Forward-Current Transfer Ratio IC = 0.05Adc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Base-Emitter Non-Saturated Voltage VCE = 5.0Vdc, IC = 2.5Adc VBE 1.45 Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc VBE(sat)1 VBE(sat)2 1.45 2.2 Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 0.25Adc IC = 5.0Adc, IB = 0.5Adc VCE(sat)1 VCE(sat)2 0.75 1.5 Vdc Max. Unit 250 pF DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. hfe 50 |hfe| 7.0 Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 5Vdc, IC = 100mAdc, f = 1kHz Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1s Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.5Adc Test 3 VCE = 80Vdc, IC = 100mAdc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0046 Rev. 3 (091477) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/613 Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology FIGURE 1: PACKAGE DIMENSIONS T4-LDS-0046 Rev. 3 (091477) Page 3 of 3