LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR GRAPM LED DISPLAY LBD1311URFUGHYS-XX/RP55 DATA SHEET DOC. NO : QW0905- LBD1311URFUGHYS-XX/RP55 REV. : B DATE : 19 - Oct. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 1/9 Package Dimensions 26.0 PIN NO.1 10.5 LBD1311URFUGHYS-XX/RP55 LIGITEK A3 A2 A1 B3 B2 B1 F1 18.5 F2 E1 E2 E3 F3 D1 D2 D3 Ø 0.45 TYP 36.0 C1 C2 C3 5.5±0.5 22.4 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 2.54X11 =27.94 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/9 PART NO. LBD1311URFUGHYS-XX/RP55 Internal Circuit Diagram 20 1 A1 A2 A3 2 B1 B2 B3 3 4 17 18 19 15 16 D1 D2 D3 8 9 10 14 E1 E2 E3 5 6 7 URF HYS C1 C2 C3 11 12 13 24 F1 21 UG F2 22 F3 23 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Electrical Connection PIN NO.1 LBD1311URFUGHYS-XX/RP55 1 Common Cathode A1,A2,A3 2 Anode A1 3 Anode A2 4 Anode A3 5 Anode E1 6 Anode E2 7 Anode E3 8 Anode D1 9 Anode D2 10 Anode D3 11 Anode C1 12 Anode C2 13 Anode C3 14 Common Cathode C1,C2,C3 15 Common Cathode D1,D2,D3 16 Common Cathode E1,E2,E3 17 Anode B1 18 Anode B2 19 Anode B3 20 Common Cathode B1,B2,B3 21 Anode F1 22 Anode F2 23 Anode F3 24 Common Cathode F1,F2,F3 Page 3/9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/9 PART NO. LBD1311URFUGHYS-XX/RP55 Absolute Maximum Ratings at Ta=25 ℃ MAXIMUM RATING UNIT PARAMETER RED GREEN YELLOW Power Dissipation Per Die 120 75 75 mW Peak Forward Current Per Die (1/10 Duty Cycle,0.1ms Pulse Width) 130 60 60 mA Forward Current Per Chip 50 30 30 mA Reverse Voltage Per Die 5 5 5 V V Electrostatic Discharge( * ) 2000 Operation Temperature Range -25℃ to +85℃ Storage Temperature Range -25℃ to +85℃ Solder Temperature 1/16 inch Below Seating Plane for 3 Seconds at 260℃ Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * Static glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25℃ RED(A1,B1,C1,D1,E1) PARAMETER Average Luminous Intensity SYMBOL MIN. TYP. UNIT TEST CONDITION Iv 14 24 mcd IF=10mA MAX. Spectral Line Half-Width Δλ 20 nm IF=20mA Dominant Wavelength λd 630 nm IF=20mA Forward Voltage Per Die VF 2.4 V IF=20mA Reverse Current Per Die IR 10 μA VR=5V Iv-m 2:1 Luminous Intensity Matching Ratio 1.5 1.8 IF=10mA UG(A3,B3,C3,D3,E3) PARAMETER Average Luminous Intensity SYMBOL MIN. TYP. Iv 13 MAX. UNIT TEST CONDITION 22 mcd IF=10mA Spectral Line Half-Width Δλ 20 nm IF=20mA Dominant Wavelength λd 587 nm IF=20mA Forward Voltage Per Die VF 2.8 V IF=20mA Reverse Current Per Die IR 10 μA VR=5V Iv-m 2:1 Luminous Intensity Matching Ratio 1.7 1.9 IF=10mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/9 PART NO. LBD1311URFUGHYS-XX/RP55 ELECTRICAL /OPTICAL CHARACTERISTICS AT T A=25℃ YELLOW(A2,B2,C2,D2,E2) PARAMETER Average Luminous Intensity UNIT TEST CONDITION 30 mcd IF=10mA SYMBOL MIN. TYP. Iv 18 MAX. Spectral Line Half-Width Δλ 15 nm IF=20mA Dominant Wavelength λd 587 nm IF=20mA Forward Voltage Per Die VF 2.8 V IF=20mA Reverse Current Per Die IR 10 μA VR=5V Iv-m 2:1 Luminous Intensity Matching Ratio 1.7 1.9 IF=10mA HYS(F1,F2,F3) PARAMETER Average Luminous Intensity SYMBOL MIN. TYP. Iv 108 MAX. UNIT TEST CONDITION 180 mcd IF=20mA Spectral Line Half-Width Δλ 15 nm IF=20mA Dominant Wavelength λd 587 nm IF=20mA Forward Voltage Per Die VF 2.8 V IF=20mA Reverse Current Per Die IR 10 μA VR=5V Iv-m 2:1 Luminous Intensity Matching Ratio 1.7 1.9 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. IF=10mA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD1311URFUGHYS-XX/RP55 Page 6/9 Typical Electro-Optical Characteristics Curve URF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0 0.1 1.0 1.5 2.0 2.5 1.0 3.0 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize@25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 -0 20 40 60 80 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0 550 600 650 Wavelength (nm) 100 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page7/9 PART NO. LBD1311URFUGHYS-XX/RP55 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 8/9 PART NO. LBD1311URFUGHYS-XX/RP55 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 1.5 2.0 2.5 3.0 1.0 Fig.4 Relative Intensity vs. Temperature Fig.3 Forward Voltage vs. Temperature 1.2 3.0 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 650 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 9/9 PART NO. LBD1311URFUGHYS-XX/RP55 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11