MPSA92 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio VCE=10V 50 40 0.1 10 1.0 APPLICATIONS * Telephone dialler circuits 170 150 110 ABSOLUTE MAXIMUM RATINGS. 70 50 30 0.1 IC-Collector Current (mA) 100 10 1.0 IC-Collector Current (mA) fT vs IC 1A Single Pulse Test at Tamb=25°C IC-Collector Current Amps 10ms IC / IB=10 2.0 1.0 1.0 10 100 IC-Collector Current (mA) D.C. 0.01 10 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area VCE(sat) vs IC PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb = 25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.1 0.001 1 0 1ms 100ms PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -300 V IC=-100µ A, IE=0 V(BR)CEO -300 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -0.25 µA VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-20mA, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-20mA, IB=-2mA* Static Forward Current hFE Transfer Ratio 25 40 25 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=-1mA, VCE=10V* IC=-10mA, VCE=10V* IC=-30mA,VCE=-10V* 6 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-85 E E-Line TO92 Compatible 90 hFE vs IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) C B VCE=20V 130 100 3.0 MPSA92 ISSUE2 MARCH 94 FEATURES * High voltage TYPICAL CHARACTERISTICS 60 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3-84 MPSA92 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio VCE=10V 50 40 0.1 10 1.0 APPLICATIONS * Telephone dialler circuits 170 150 110 ABSOLUTE MAXIMUM RATINGS. 70 50 30 0.1 IC-Collector Current (mA) 100 10 1.0 IC-Collector Current (mA) fT vs IC 1A Single Pulse Test at Tamb=25°C IC-Collector Current Amps 10ms IC / IB=10 2.0 1.0 1.0 10 100 IC-Collector Current (mA) D.C. 0.01 10 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area VCE(sat) vs IC PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -500 mA Power Dissipation at Tamb = 25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.1 0.001 1 0 1ms 100ms PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -300 V IC=-100µ A, IE=0 V(BR)CEO -300 V IC=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µ A, IC=0 Collector Cut-Off Current ICBO -0.25 µA VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -0.1 µA VEB=-3V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-20mA, IB=-2mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-20mA, IB=-2mA* Static Forward Current hFE Transfer Ratio 25 40 25 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=-1mA, VCE=10V* IC=-10mA, VCE=10V* IC=-30mA,VCE=-10V* 6 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-85 E E-Line TO92 Compatible 90 hFE vs IC VCE (sat) Collector-Emitter Saturation Voltage(Volts) C B VCE=20V 130 100 3.0 MPSA92 ISSUE2 MARCH 94 FEATURES * High voltage TYPICAL CHARACTERISTICS 60 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3-84