2N6109, 6290 Complementary Power Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 50V (Minimum) - 2N6109, 2N6290. • DC current gain specified to 7.0 Amperes hFE = 2.3 (Minimum) at IC = 7.0A - 2N6109, 2N6290. • Complementary Silicon Plastic Power Transistors. Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case). PNP NPN 2N6109 2N6290 Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 50 Volts 40 Watts E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 7 Ampere Complementary Silicon Power Transistors TO-220 Dimensions : Millimetres Page 1 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors Maximum Ratings Symbol 2N6109 2N6290 Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 60 Emitter-Base Voltage VEBO 5.0 Collector Current-Continuous -Peak IC 7.0 10 Base Current IB 3.0 Total Power Dissipation at TC = 25°C Derate above 25°C PD 40 0.32 W W/°C TJ, TSTG -65 to +150 °C Parameter Operating and Storage Junction Temperature Range Unit V A Thermal Characteristic Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rθjc 3.125 °C/W Figure 1 - Power Derating Page 2 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Minimum Maximum Unit VCEO(sus) 50 - V - 1.0 Off Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 100mA, IB = 0) Collector Cut off Current (VCE = 40V, IB = 0) ICEO Collector Cut off Current (VCE = 60V, VBE(off) = 1.5V) (VCE = 50V, VBE(off) = 1.5V, TC = 125°C) ICEX - 0.1 2.0 Emitter Cut off Current (VEB = 5.0V, IC = 0) IEBO - 1.0 hFE 30 2.3 150 VCE(sat) - 3.5 mA On Characteristics (1) DC Current Gain (IC = 2.5A, VCE = 4.0V) (IC = 7.0A, VCE = 4.0V) Collector-Emitter Saturation Voltage (IC = 7.0A, IB = 3.0A) - V Base-Emitter On Voltage (IC = 7.0A, VCE = 4.0V) VBE(on) - 3.0 Current Gain-Bandwidth Product (2) (IC = 0.5A, VCE = 4.0V, f = 1.0MHz) fT 2.5 10 - MHz Small Signal Current Gain (IC = 0.5A, VCE = 4.0V, f = 50kHz) hfe 20 - - Dynamic Characteristics (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. (2) fT = hfe • ftest. Page 3 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors Figure 2 - Switching Time Test Circuit Figure 3 - Turn-Off Time D1 must be fast recovery type, example: MB05300 used above IB = 100mA MSD6100 used below IB = 100mA Figure 4 - DC Current Gain Figure 5 - Turn-On Time Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on TJ(PK) = 150°C; TC is variable depending on the power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Page 4 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors Figure 7 - Collector Saturation Region Figure 8 - Capacitances Figure 9 - “ON” Voltage Figure 10 - Collector Cut-Off Region Specifications IC(av) maximum (A) VCEO maximum (V) hFE minimum at IC = 2.5A Ptot at 25°C (W) 7 50 30 40 Page 5 Type Part Number PNP 2N6109 NPN 2N6290 31/05/05 V1.0 2N6109, 6290 Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne FINLAND – Farnell InOne NETHERLANDS – Farnell InOne SWITZERLAND – Farnell InOne Tel No: Tel No: Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898 Fax No: ++ 358 9 345 5411 Fax No: ++ 31 30 241 7333 Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54 AUSTRIA – Farnell InOne FRANCE – Farnell InOne NEW ZEALAND – Farnell InOne UK – Farnell InOne Tel No: Tel No: Tel No: Tel No: ++ 43 662 2180 680 ++ 358 9 560 7780 ++ 33 474 68 99 99 ++ 31 30 241 7373 ++ 64 9 357 0646 ++ 44 8701 200 200 Fax No: ++ 43 662 2180 670 Fax No: ++ 33 474 68 99 90 Fax No: ++ 64 9 357 0656 Fax No: ++ 44 8701 200 201 BELGIUM – Farnell InOne GERMANY – Farnell InOne NORWAY – Farnell InOne UK – BuckHickman InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 66 ++ 44 8450 510 150 ++ 32 3 475 2810 ++ 49 89 61 39 39 39 Fax No: ++ 32 3 227 3648 Fax No: ++ 49 89 613 59 01 Fax No: ++ 45 44 53 66 02 ++ 44 8450 510 130 BRAZIL – Farnell-Newark InOne HONG KONG – Farnell-Newark InOne Tel No: ++ 852 2268 9888 PORTUGAL – Farnell InOne UK – CPC ++ 55 11 4066 9400 Tel No: ++ 34 93 475 8804 ++ 44 8701 202 530 Fax No: ++ 55 11 4066 9410 Fax No: ++ 852 2268 9899 Fax No: ++ 34 93 474 5288 ++ 44 8701 202 531 CHINA – Farnell-Newark InOne IRELAND – Farnell InOne SINGAPORE – Tel No: Tel No: Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022 Farnell-Newark InOne Tel No: ++ 65 6788 0200 ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016 Fax No: ++ 65 6788 0300 export EXPORT – Farnell InOne Tel No: ++ 44 8701 200 208 Fax No: ++ 44 8701 200 209 For enquiries from all other markets DENMARK – Farnell InOne ITALY – Farnell InOne SPAIN – Farnell InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 44 ++ 39 02 93 995 200 ++ 34 93 475 8805 Fax No: ++ 45 44 53 66 06 Fax No: ++ 39 02 93 995 300 Fax No: ++ 34 93 474 5107 ESTONIA – Farnell InOne MALAYSIA – SWEDEN – Farnell InOne http://www.farnellinone.com Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 Fax No: ++ 60 3 7873 7000 Tel No: ++ 46 8 730 50 00 Fax No: ++ 46 8 83 52 62 http://www.buckhickmaninone.com http://www.cpc.co.uk Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. 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