ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 [email protected] www.roithner-laser.com RLT6650G TECHNICAL DATA High Power Visible Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 660 nm typ., multimode NOTE! Output power: 50 mW LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Absolute Maximum Ratings (Tc=25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 55 2 30 -10 .. +40 -40 .. +85 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX Optical Output Power Po cw operation 50 Threshold Current Ith cw operation 70 85 120 Operation Current Iop Po = 50 mW 135 160 220 Operation Voltage Vop Po = 50 mW 2.0 2.1 2.2 Lasing Wavelength P = 50 mW 655 660 665 λp o Beam Divergence P 10 12 14 θ// o = 50 mW Beam Divergence Po = 50 mW 20 25 30 θ⊥ 10 x 1 Lasing Aperture A Po = 50 mW Monitor Current Im Po = 50 mW 0.35 0.5 1.5 UNIT mW mA mA V nm ° ° µm² mA