PD - 91737A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) IRHNB7064 60V, N-CHANNEL ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7064 IRHNA3064 IRHNA4064 IRHNA8064 Radiation Level RDS(on) 100K Rads (Si) 0.015Ω 300K Rads (Si) 0.015Ω 600K Rads (Si) 0.015Ω 1000K Rads (Si) 0.015Ω ID 75*A 75*A 75*A 75*A SMD-3 HEXFET® International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 75* 56 300 300 2.4 ±20 500 75* 30 2.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( for 5 sec.) 3.5 (Typical ) C g For footnotes refer to the last page *Current is limited by pin diameter www.irf.com 1 12/12/01 IRHNB7064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units Test Conditions 60 — — V VGS = 0V, ID = 1.0mA — 0.056 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 18 — — — — — — — — 0.015 0.018 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 260 60 86 27 120 76 93 — C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4900 2800 860 — — — VGS = 12V, ID = 56A ➃ VGS = 12V, ID = 75A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 56A ➃ VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 30V V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD =30V, ID = 75A VGS =12V, RG = 2.35Ω ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 75* 356 3.0 220 3.1 Test Conditions A V nS µC Tj = 25°C, IS = 75A, VGS = 0V ➃ Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by the internal wire diameter Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — Test Conditions °C/W Soldered to a 1” sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNB7064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100 K Rads (Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-3) Diode Forward Voltage ➃ 300-1000K Rads (Si)2 Units Test Conditions Min Max Min Max 60 2.0 — — — — — 4.0 100 -100 25 0.015 60 1.25 — — — — — 4.5 100 -100 50 0.025 µA Ω VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =56A — 0.015 — 0.025 Ω VGS = 12V, ID =56A — 3.0 3.0 V VGS = 0V, IS = 75A — V nA 1. Part number IRHNB7064 2. Part numbers IRHNB8064, RHNB3064, and IRHNB4064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area VD S(V) Ion LE T MeV/(mg/cm²)) Energy (MeV) Range (µm) @VGS=0V @VGS=-5V I 59.9 345 32.8 60 60 45 40 30 Br 36.8 305 39 40 35 30 25 20 @VGS=-10V @VGS=-15V @VGS=-20V 70 60 VDS 50 40 BR I 30 20 10 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7064 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 20µs PULSE WIDTH 5.0V T = 25 °C J 10 0.1 1 10 TJ = 25 ° C TJ = 150 ° C V DS = 25V 20µs PULSE WIDTH 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 12 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 6 10 100 Fig 2. Typical Output Characteristics 1000 10 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 5.0V 20µs PULSE WIDTH TJ = 150 °C 10 0.1 100 VDS , Drain-to-Source Voltage (V) 5 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP 89A ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 6000 Ciss Coss 4000 2000 C rss 20 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHNB7064 ID = 75A 35A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 1000 1000 I D , Drain Current (A) TJ = 150 ° C V GS = 0 V 3.0 4.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 250 100us 100 10 2.0 200 DS(on) 1.0 150 OPERATION IN THIS AREA LIMITED BY R TJ = 25 ° C 1 0.0 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 50 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) VDS = 48V VDS = 30V VDS = 12V 5.0 1ms 10ms 10 1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNB7064 Pre-Irradiation 120 LIMITED BY PACKAGE VGS 100 I D , Drain Current (A) RD VDS D.U.T. RG + -VDD 80 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 TC , Case Temperature ( ° C) 150 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7064 EAS , Single Pulse Avalanche Energy (mJ) 1400 TOP 1200 15V BOTTOM 1000 D R IV E R L VDS D .U .T RG + - VD D IA S VGS 20V A 0 .01 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S ID 16A 22A 35A 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNB7064 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.17mH Peak IL = 75A, VGS =12V ➂ ISD ≤ 75A, di/dt ≤ 220A/µs, VDD ≤ 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com