〈SMALL-SIGNAL TRANSISTOR〉 2SA2193 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION ISAHAYA 2SA2193 is a super mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage amplify application. OUTLINE DRAWING Unit:mm 2.1 0.425 1.25 0.425 1.30 0.65 FEATURE 0.3 1 2.0 ・Low collector to emitter saturation voltage VCE(sat)=-0.4V max(@IC=-50mA,IB=-5mA) 0.65 3 2 ・Excellent linearity of DC forward current gain ・Small packege for easy mounting 0.15 0.9 0.7 0∼0.1 APPLICATION For small type machine low frequency voltage amplify application TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : - MAXIMUM RATINGS (Ta=25℃) Symbol Parameter V CBO Collector to Base voltage -60 V Collector to Emitter voltage Emitter to Base voltage -40 V -6.0 V V CEO V EBO Ratings Unit Collector current -200 mA PC Collector dissipation 150 mW Tj Junction temperature +150 ℃ -55 ∼ +150 ℃ I C Tstg Storage temprature MARKING 2 W hFE ITEM TYPE NAME ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Min V (BR)CEO C to E break down voltage IC =-1mA, R BE=∞ Typ Unit Max V -40 I CBO Collector cut off current V CB=-60V, IE=0mA -0.1 μA I EBO Emitter cut off current V EB=-6V, IC =0mA -0.1 μA DC forward current gain V CE=-1V, IC =-10mA C to E saturation voltage IC =-50mA, IB=-5mA Gain bandwidth product Collector output capacitance V CE=-20V, IE=10mA h FE V CE(sat) fT Cob V CB=-5V, IE=0mA, f=1MHz 100 300 -400 mV MHz 250 5.0 pF 〈SMALL-SIGNAL TRANSISTOR〉 2SA2193 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT -50 Ta=25℃ -60 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) -70 -250μA -50 -40 -200μA -30 -150μA -20 -100μA -10 Ta=25℃ VCE=-1V -40 -30 -20 -10 IB=-50μA 0 -0 -00 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -10 -0 0 -0.0 0 -1000 1000 Ta=25℃ VCE=-1V C TO E SATURATION VOLTAGE VCE(sat)(mV) DC FORWARD CURRENT GAIN hFE -1.0 COLLECTOR EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 100 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) Ta=25℃ IC/IB=10 -100 -10 -0.1 -100 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT -1 -10 COLLECTOR CURRENT IC(mA) -100 COLLECTOR OUTPUT CAPACITANCE VS.COLLECTOR TO BASE VOLTAGE 10 1000 COLLECTOR OUTPUT CAPACITANCE Cob(pF) GAIN BAND WIDTH PRODUCT fT(MHz) -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) Ta=25℃ VCE=-20V 100 10 1 10 EMITTER CURRENT IE(mA) 100 Ta=25℃ IE=0 f=1MHz 1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100