Transistors IC SMD Type Silicon PNP Epitaxial 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Excelent lineary DC forward current gain. 0.55 Small collector to emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Super mini package for easy mounting. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -200 mA Collector dissipation (Ta=25 ) PC 150 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter breakdown voltage Testconditons V(BR)CEO IC = -100ìA , RBE = Min Typ Max Unit -50 V Collector cutoff current ICBO ICB = -50V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -6V , IC = 0 -0.1 ìA hFE VCE = -6V , IC = -1mA DC current gain Collector-emitter saturation voltage 150 800 VCE(sat) IC = -100mA , IB = -10mA Current gain bandwidth product Noise figure V VCE = -6V , IE = 10mA 200 MHz Cob VCB = -6V , IE = 0 , f = 1MHz 4.0 pF NF VCB = -6V , IE = 0.3mA , f = 100Hz , RG = 10KÙ fT Collector output capacitance -0.3 20 dB hFE Classification Marking ME MF MG hFE 150 300 250 500 400 800 www.kexin.com.cn 1