Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 1.45 0.95 1.9±0.2 0.65±0.15 1 0.95 3 +0.1 High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.2 ● 2.9 –0.05 ● 1.5 –0.05 0.4 –0.05 ■ Features +0.25 0.65±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : FB (Ta=25˚C) Symbol Conditions min Emitter cutoff current IEBO VEB = 2V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 15 100 Forward current transfer ratio hFE VCE = 4V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Base to emitter voltage VBE VCE = 4V, IC = 2mA Transition frequency fT VCB = 10V, IE = –15mA, f = 200MHz 0.8 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 0.6 Common emitter reverse transfer capacitance Crb VCB = 6V, IE = 0, f = 1MHz Power gain PG VCB = 10V, IE = –10mA, f = 200MHz hFE ratio 0 to 0.1 Parameter 0.16 –0.06 (Ta=25˚C) 0.8 ■ Absolute Maximum Ratings +0.2 1.1 –0.1 2 hFE(RATIO) VCE = 4V, IC = 100µA VCE = 4V, IC = 2mA typ max Unit 2 µA V 350 0.5 V 1.3 1.9 GHz 1.0 1.4 pF 0.7 V 0.4 14 0.6 18 pF 22 dB 1.5 1 2SC5216 Transistor PC — Ta IC — VCE 120 150 100 50 100 Collector current IC (mA) 100 200 80 IB=600µA 500µA 60 400µA 300µA 40 200µA 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 1 1 0.3 Ta=75˚C 0.1 25˚C –25˚C 0.01 0.003 0.001 3 10 30 100 2 3 4 5 6 0 300 Collector current IC (mA) 1000 –25˚C 0.2 0.4 0.8 1.0 1.2 Cob — VCB 3.0 VCE=4V 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0.6 Base to emitter voltage VBE (V) 300 Forward current transfer ratio hFE 3 1 Ta=75˚C hFE — IC IC/IB=5 0.03 25˚C 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 60 0 0 Collector output capacitance Cob (pF) 20 80 20 100µA 0 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=4V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 250 f=1MHz IE=0 Ta=25˚C 2.5 2.0 1.5 1.0 0.5 0 0.3 1 3 10 30 Collector current IC (mA) 100 1 3 10 30 100 Collector to base voltage VCB (V)