Transistors IC SMD Type Silicon NPN Epitaxial 2SC4155A Features Small collector to emitter saturation voltage. VCE(sat)=0.3max Excellent lineality of dc forward current gain. Supper mini package for easy mounting. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg –55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter break down voltage Testconditons V(BR)CEO IC=100ìA,RBE= Collector cut-off current ICBO VCB = 50 V, IE = 0 Emitter cut-off current IEBO VEB = 4 V, IC = 0 DC current gain hFE VCE = 6 V, IC = 1 mA Collector-emitter saturation voltage Min Typ Transition frequency fT VCE = 6 V, IC = -10 mA Cob VCB = 6 V, IE = 0, f = 1 MHz Noise figure NF VCB = 6 V, IE = 0, f = 1 MHz, Rg=2kÙ Unit V 120 0.1 ìA 0.1 ìA 820 VCE (sat) IC = 100 mA, IB = 10 mA Collector output capacitance Max 50 0.3 V 200 MHz 4 pF 15 dB hFE Classification Marking HQ HR HS HT hFE 120 270 180 390 270 560 390 820 www.kexin.com.cn 1