KEXIN 2SC4155A

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC4155A
Features
Small collector to emitter saturation voltage.
VCE(sat)=0.3max
Excellent lineality of dc forward current gain.
Supper mini package for easy mounting.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
200
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
–55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter break down voltage
Testconditons
V(BR)CEO IC=100ìA,RBE=
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
DC current gain
hFE
VCE = 6 V, IC = 1 mA
Collector-emitter saturation voltage
Min
Typ
Transition frequency
fT
VCE = 6 V, IC = -10 mA
Cob
VCB = 6 V, IE = 0, f = 1 MHz
Noise figure
NF
VCB = 6 V, IE = 0, f = 1 MHz, Rg=2kÙ
Unit
V
120
0.1
ìA
0.1
ìA
820
VCE (sat) IC = 100 mA, IB = 10 mA
Collector output capacitance
Max
50
0.3
V
200
MHz
4
pF
15
dB
hFE Classification
Marking
HQ
HR
HS
HT
hFE
120 270
180 390
270 560
390 820
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