ISAHAYA 2SC5726

〈SMALL-SIGNAL TRANSISTOR〉
2SC5726
PRELIMINARY
Notics:This is not a final specification.
Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC5726 is a mini package resin sealed
silicon NPN epitaxial transistor,
2.5
It is designed for high frequency application.
1.5
2.9
1.90
0.95 0.95
FEATURE
0.5
0.4
0.5
.
①
②
③
● High gain bandwidth product.
fT=10.0GHz
●High gain, low noise.
0∼0.1
●Super mini package for easy mounting
0.8
1.1
●Can operate at low voltage.
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
JEITA:SC-59
TERMINAL CONNECTER
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
①:BASE
Ratings
Unit
VCBO
Collector to Base voltage
15
V
VCEO
Collector to Emitter voltage
6
V
VEBO
Emitter to Base voltage
1.5
V
Collector current
50
mA
I
O
Pc
Collector dissipation
150
mW
Tj
Junction temperature
+125
℃
Tstg
Storage temperature
-55∼+125
℃
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB
DC forward current gain
hFE
V
CE
Gain bandwidth product
fT
V
CE
Typ
Max
Unit
=10V, I E=0mA
-
-
1.0
μA
=1V, I C=0mA
-
-
1.0
μA
-
250
10.0
-
=3V, I C=10mA
30
=3V, I E=10mA
-
Collector output capacitance
Cob
V
CB
Insertion power gain
|S21|2
V
CE
NF
V
CE
Noise figure
Limits
Min
GHz
=3V, I E=0mA,f=1MHz
-
0.7
-
pF
=3V, I C=10mA,f=1GHz
10.0
13.0
-
dB
=3V, I C=5mA,f=1GHz
-
1.4
-
dB
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003